PHM021
Abstract: 250 watt amplifier
Contextual Info: polyfet rf devices PHM021 Power RF Amplifiers Power = 10.0 Watts Bandwidth = 136 to 174 Mhz Gain = 25.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The PHM021 is a 10 Watt FM / 2 Watt AM amplifier module covering a bandwidth of 136-174 Mhz. It has a high IP3 rating when
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PHM021
PHM021
250 watt amplifier
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amplifier 446 mhz
Abstract: PHM017 uhf linear amplifier module
Contextual Info: polyfet rf devices PHM017 Power RF Amplifiers Power = 10.0 Watts Bandwidth = 380 to 512 Mhz Gain = 25.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The PHM017 is a 10 Watt FM / 2 Watt AM amplifier module covering a bandwidth of 380-512 Mhz. It has a high IP3 rating when
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PHM017
PHM017
amplifier 446 mhz
uhf linear amplifier module
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PHM017-3
Abstract: Polyfet RF Devices TETRA radio
Contextual Info: polyfet rf devices PHM017-3 Power RF Amplifiers Power = 10.0 Watts Bandwidth = 400 to 450 Mhz Gain = 25.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The PHM017-3 is a 10 Watt FM / 2 Watt AM amplifier module covering a bandwidth of 400-450 Mhz. It has a high IP3 rating when
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PHM017-3
PHM017-3
450MHz
Polyfet RF Devices
TETRA radio
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RA07M4047MS
Abstract: rara RA07M4047M
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RA07M4047 RA07M4047M 07M4047MSA OBSERVE HANDLING PRECAUTIONS RoHS Compliance , 400-470MHz 7.0W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M4047MSA is a 7-watt RF MOSFET Amplifier
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RA07M4047M
RA07M4047MSA
07M4047
400-470MHz
RA07M4047MSA
470-MHz
RA07M4047MS
rara
RA07M4047M
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RA07M1317MS
Abstract: RA07M1317M RF TRANSISTOR 1 WATT 07M1317
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RA07M1317 RA07M1317M 07M1317MSA OBSERVE HANDLING PRECAUTIONS RoHS Compliance , 135-175MHz 6.7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317MSA is a 6.7-watt RF MOSFET Amplifier
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RA07M1317M
RA07M1317MSA
07M1317
135-175MHz
RA07M1317MSA
175-MHz
RA07M1317MS
RA07M1317M
RF TRANSISTOR 1 WATT
07M1317
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RA07M4452M
Abstract: generator 4.20 mA
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RA07M4452 RA07M4452M 07M4452MSA OBSERVE HANDLING PRECAUTIONS RoHS Compliance , 440-520MHz 7.0W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M4452MSA is a 7-watt RF MOSFET Amplifier
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RA07M4452M
RA07M4452MSA
07M4452
440-520MHz
RA07M4452MSA
520-MHz
RA07M4452M
generator 4.20 mA
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RA08N1317M
Abstract: RA08N1317M-101
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA08N1317 RA08N1317M 08N1317M RoHS Compliance , 135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA08N1317M is a 8-watt RF MOSFET Amplifier Module
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RA08N1317M
08N1317
135-175MHz
RA08N1317M
175-MHz
RA08N1317M-101
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marking GG
Abstract: RA07H4452M RA07H4452M-101
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H4452 RA07H4452M 07H4452M RoHS Compliance ,440-520MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07H4452M is a 7-watt RF MOSFET Amplifier Module
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RA07H4452M
07H4452
440-520MHz
RA07H4452M
520-MHz
marking GG
RA07H4452M-101
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RMBA09501
Abstract: RMBA09501-58 2 Watt rf Amplifier grm39 fr4 metal slug
Contextual Info: RF Components RMBA09501-58 - Cellular 2 Watt Linear GaAs MMIC Power Amplifier ADVANCED INFORMATION Description Features Electrical Characteristics2 Absolute Ratings The RMBA09501-58 is a highly linear Power Amplifier. The two stage circuit uses Raytheon RF
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RMBA09501-58
RMBA09501
2 Watt rf Amplifier
grm39
fr4 metal slug
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RA07H3340M-101
Abstract: marking GG RA*3340 RA07H3340M
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H3340 RA07H3340M 07H3340M RoHS Compliance ,330-400MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07H3340M is a 7-watt RF MOSFET Amplifier Module
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RA07H3340M
07H3340
330-400MHz
RA07H3340M
400-MHz
RA07H3340M-101
marking GG
RA*3340
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RA07H0608M-101
Abstract: RA07H0608M
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H0608 RA07H0608M 07H0608M RoHS Compliance ,68-88MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07H0608M is a 7-watt RF MOSFET Amplifier Module
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07H0608
68-88MHz
RA07H0608M
88-MHz
RA07H0608M-101
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RA08H1317
Abstract: RA08H1317M RA08H1317M-101
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA08H1317 RA08H1317M 08H1317M RoHS Compliance , 135-175MHz 8W 12.5V, 2 stage Amp. For PORTABLE RADIO DESCRIPTION The RA08H1317M is a 8-watt RF MOSFET Amplifier Module
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08H1317
135-175MHz
RA08H1317M
175-MHz
RA08H1317
RA08H1317M-101
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RA13H4452M-01
Abstract: RA13H4452M
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H4452M 440-520MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H4452M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to
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RA13H4452M
440-520MHz
RA13H4452M
13-watt
520-MHz
RA13H4452M-01
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rf power amplifier circuit by 400-470mhz
Abstract: RA13H4047M RA13H4047M-01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H4047M 400-470MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H4047M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to
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RA13H4047M
400-470MHz
RA13H4047M
13-watt
470-MHz
rf power amplifier circuit by 400-470mhz
RA13H4047M-01
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RA13H8891MA
Abstract: RA13H8891MA-01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MA 889-915MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MA is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 889- to
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RA13H8891MA
889-915MHz
RA13H8891MA
13-watt
915-MHz
RA13H8891MA-01
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RA30H2127M
Abstract: RA30H2127M-01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H2127M 210-270MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H2127M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 210- to
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RA30H2127M
210-270MHz
RA30H2127M
30-watt
270-MHz
RA30H2127M-01
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MOSFET Amplifier Module
Abstract: f953 945 mosfet
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M9595M RoHS Compliance ,952-954MHz 3.0W 8.0V, 2 Stage Amp. DESCRIPTION The RA03M9595M is a 3.0-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the
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RA03M9595M
952-954MHz
RA03M9595M
MOSFET Amplifier Module
f953
945 mosfet
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RA07N4452M
Abstract: RA07N4452M-01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07N4452M 440-520MHz 7.5W 9.6V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07N4452M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 440- to
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440-520MHz
RA07N4452M
520-MHz
RA07N4452M-01
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RA03M8087M
Abstract: RA03M8087M-01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M8087M 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8087M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 806- to
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RA03M8087M
806-870MHz
RA03M8087M
870-MHz
RA03M8087M-01
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H11S
Abstract: RA13H8891MA RA13H8891MA-01 RA13H8891MA-E01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MA 889-915MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MA is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 889- to
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RA13H8891MA
889-915MHz
RA13H8891MA
13-watt
915-MHz
H11S
RA13H8891MA-01
RA13H8891MA-E01
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RA03M8894M
Abstract: RA03M8894M-01 mitsubishi power module
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M8894M 889-941MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8894M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 889- to
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RA03M8894M
889-941MHz
RA03M8894M
941-MHz
RA03M8894M-01
mitsubishi power module
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RA13H1317M
Abstract: RA13H1317M-01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H1317M 135-175MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H1317M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to
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RA13H1317M
135-175MHz
RA13H1317M
13-watt
175-MHz
RA13H1317M-01
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RA13H3340M
Abstract: RA13H3340M-01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H3340M 330-400MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H3340M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to
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RA13H3340M
330-400MHz
RA13H3340M
13-watt
400-MHz
RA13H3340M-01
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RF MOSFET MODULE
Abstract: RA35H1516M RA35H1516M-01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA35H1516M 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to
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RA35H1516M
154-162MHz
RA35H1516M
40-watt
162-MHz
RF MOSFET MODULE
RA35H1516M-01
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