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    RA07M1317 Search Results

    RA07M1317 Datasheets (6)

    Mitsubishi
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    RA07M1317M
    Mitsubishi RoHS Compliance , 135-175MHz 6.5W 7.2V, 2 Stage Amp. For PORTABLE RADIO Original PDF 96.32KB 8
    RA07M1317M
    Mitsubishi 135-175MHz 6.5W 7.2V, 2 Stage Amp. For PORTABLE RADIO Original PDF 63.28KB 9
    RA07M1317M-01
    Mitsubishi 135 - 175 MHz 6.5 W 7.2 V, 2 Stage Amp. for Portable Radio Original PDF 82.72KB 9
    RA07M1317M-01
    Mitsubishi 135-175MHz 6.5W 7.2V, 2 Stage Amp. For PORTABLE RADIO Original PDF 63.29KB 9
    RA07M1317M-101
    Mitsubishi RoHS Compliance , 135-175MHz 6.5W 7.2V, 2 Stage Amp. For PORTABLE RADIO Original PDF 96.33KB 8
    RA07M1317M-E01
    Mitsubishi 135-175MHz 6.5W 7.2V, 2 Stage Amp. For PORTABLE RADIO Original PDF 63.29KB 9
    SF Impression Pixel

    RA07M1317 Price and Stock

    Mitsubishi Electric

    Mitsubishi Electric RA07M1317M

    135-175MHz 6.5W 7.2V, 2 Stage Amp. For PORTABLE RADIO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics RA07M1317M 600
    • 1 -
    • 10 $19.12
    • 100 $16.45
    • 1000 $16.45
    • 10000 $16.45
    Buy Now

    RA07M1317 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    RA07M1317MS

    Abstract: 135175MHz ra07m1317msa
    Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M1317MSA RoHS Compliance , 135-175MHz 6.7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317MSA is a 6.7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 135- to


    Original
    ra07m1317msa135-175mhz175-mhzra07m1317ms+1135175mhz PDF

    RA07M1317M

    Abstract: RA07M1317M-01
    Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M1317M 135-175MHz 6.5W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317M is a 6.5-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 135- to


    Original
    ra07m1317m135-175mhz175-mhzra07m1317m-01 PDF

    RA07M1317MS

    Abstract: RA07M1317MSA RA07M1317M-s RA07M
    Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M1317MSA RoHS Compliance , 135-175MHz 6.7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317MSA is a 6.7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 135- to


    Original
    ra07m1317msa135-175mhz175-mhzra07m1317ms+2ra07m1317m-sra07m PDF

    RA07M1317M

    Abstract: RA07M1317M-101 AT/RA07M1317M
    Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M1317M RoHS Compliance , 135-175MHz 6.5W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317M is a 6.5-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 135- to


    Original
    ra07m1317m135-175mhz175-mhzra07m1317m-101+1at/ra07m1317m PDF

    RA07M1317M

    Abstract: RA07M1317
    Contextual Info: ATTENTION MITSUBISHI RF POWER MODULE OBSERVE PRECAUTIONS FOR HANDLING RA07M1317M ELETROSTATIC SENSmVE DEVICES Silicon MOS FET Power Amplifier, 135-175NIHz 6.5W PORTABLE RADIO OUTLINE DRAWING PIN: 1 Pin :RF INPUT 2 V gg :GATE BIAS SUPPLY 3 V dd :DRAIN BIAS SUPPLY


    OCR Scan
    ra07m1317m135-175mhz25deg50ohm+3zi-50ohmf-135-175mhzra07m1317 PDF

    d408

    Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M1317M 135-175MHz 6.5W 7.2V PORTABLE RADIO DESCRIPTION The RA07M1317M is a 6.5-watt RF MOSFET Amplifier Module for 7.2-volt mobile radios that operate in the 135- to


    Original
    ra07m1317m135-175mhz175-mhzi-20041+1d408 PDF

    RA07M1317MS

    Abstract: RA07M1317M RF TRANSISTOR 1 WATT 07M1317
    Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RA07M1317 RA07M1317M 07M1317MSA OBSERVE HANDLING PRECAUTIONS RoHS Compliance , 135-175MHz 6.7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317MSA is a 6.7-watt RF MOSFET Amplifier


    Original
    ra07m1317mra07m1317msa07m1317135-175mhz+3175-mhzra07m1317msrf transistor 1 watt PDF

    RA07M1317M

    Abstract: RF MOSFET MODULE RA07M1317M-101 135-175MHz marking code 6w
    Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M1317M RoHS Compliance , 135-175MHz 6.5W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317M is a 6.5-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 135- to


    Original
    ra07m1317m135-175mhz175-mhzrf mosfet module+2ra07m1317m-101marking code 6w PDF

    RA07M1317M

    Abstract: RA07M1317M-01 RA07M1317M-E01
    Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M1317M 135-175MHz 6.5W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317M is a 6.5-watt RF MOSFET Amplifier Module for 7.2-volt mobile radios that operate in the 135- to 175-MHz range.


    Original
    ra07m1317m135-175mhz175-mhzav86-2-2833-9793+2ra07m1317m-01ra07m1317m-e01 PDF

    RA07M1317M-101

    Abstract: 7.2volt RA07M1317M
    Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M1317M RoHS Compliance , 135-175MHz 6.5W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317M is a 6.5-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 135- to


    Original
    ra07m1317m135-175mhz175-mhzra07m1317m-101+17.2volt PDF

    Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance , 135-175MHz 6.5W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317M is a 6.5-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 135- to


    Original
    135-175mhzra07m1317m175-mhz PDF

    RA07M1317MS

    Abstract: C 829 transistor
    Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE 123456764 1234567645 34567645829 829 OBSERVE HANDLING PRECAUTIONS RoHS Compliance , 135-175MHz 6.7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317MSA is a 6.7-watt RF MOSFET Amplifier


    Original
    135-175mhzra07m1317msa175-mhzra07m1317ms+1c 829 transistor PDF

    Contextual Info: ATTENTION MITSUBISHI RF POWER MODULE OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES RA07M1317M Silicon MOS FET Power Amplifier, 135-175MHz 7W FM PORTABLE RADIO OUTLINE DRAWING Dimensions in mm 30 +/-0.2 26.6 +/-0.2 1.7 (4.4) 21.2 + /- 0.2


    OCR Scan
    ra07m1317m135-175mhz25degf-165mhz+4in-20mw50ohm25decf-135mhz PDF

    Power Semiconductors

    Abstract: RF Power walkie talkie walkie talkie circuit reliability RA07M1317M RA45H4452M semiconductors walkie-talkie
    Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-GEN-030-E Date : 16th Jun. 2003 Rev. date : 22th.Jun. 2010 Prepared : T.Kajo,T.Okawa Confirmed : H.Nakao Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: Reliability concept for Silicon RF Products


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    an-gen-030-era45h4452m520mhzra13h8891mb+11915mhzra07m1317m175mhzan-gen030power semiconductorsrf powerwalkie talkiewalkie talkie circuitreliabilitysemiconductorswalkie-talkie PDF

    RM15TB-H

    Abstract: RM10TB-H RA45H8087M rd00hhf1 rm30tn-h RM10TB RM250HB-10F ps11023-a PS11023 mitsubishi PS11023-A
    Contextual Info: MITSUBISHI СИЛОВЫЕ ПРИБОРЫ Применение: — силовые приводы электродвигателей постоянного и переменного тока; — преобразователи электроэнергии и электрогенераторы;


    Original
    cm400hacm600hacm600hbcm100dy+15cm150dycm200dycm300dycm400dycm600dyrm15tb-hrm10tb-hra45h8087mrd00hhf1rm30tn-hrm10tbrm250hb-10fps11023-aps11023mitsubishi ps11023-a PDF

    walkie-talkie

    Abstract: RF POWER RA07M1317M reliability Mitsubishi AA050MC01 RoHS 1000FIT RA45H4452M mitsubishi electric power semiconductors semiconductors
    Contextual Info: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-030-D Date : 16th Jun. 2003 Rev.date : 7th Jan. 2010 Prepared : T.Kajo,T.Okawa Confirmed : H.Nakao Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: Reliability concept for Silicon RF Products


    Original
    an-gen-030-dra45h4452m520mhzra13h8891mb+12915mhzra07m1317m175mhzan-gen030walkie-talkierf powerreliabilitymitsubishi aa050mc01 rohs1000fitmitsubishi electricpower semiconductorssemiconductors PDF