2 K BIPOLAR PROM Search Results

SIGNETICS* fusing procedure

Abstract: 82s129 programming N82S129A BIPOLAR PROM PROGRAMMING SPECIFICATION N82S126A N82S126AN N82S129AA generic prom programming signetics Bipolar PROM programming 82S126
Contextual Info: N 8 2 S126A 8 2 S129A i 1 K-Bit TTL Bipolar PROM Product Specification Bipolar Memory Products PIN CONFIGURATIONS DESCRIPTION FEATURES The 82S126A and 82S129A are field programmable, which means that cus­ tom patterns are immediately available by following the Signetics Generic I fus­

1GHz PLL Generator

Abstract: "Bipolar Integrated Technology" B2032 PLL 100Mhz B2033 Bipolar Integrated Technology
Contextual Info: BIPOLAR INTEGRATED 47E D • 1451454 OOOObTfl b ■ BIT7^2-/? Bipolar integrated Technology Inc. B2032 3 2 - O u t p u t C loc k G e n e r a t o r with 1ns Edge P l a c e m e n t Introduction: The B2032 is a high-speed integrated clock generation solution which is targeted to solve many of today's clock

smd marking WS

Contextual Info: WS57C191B/291B MILITARY HIGH SPEED 2 K x 8 CMOS PROM/RPROM KEY FEATURES • • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs Ultra-Fast Access Time — 45 ns • Immune to Latch-UP • Low Power Consumption — Up to 200 mA • Fast Programming

Contextual Info: WS57C191B/291B MILITARY HIGH SPEED 2 K x 8 CMOS PROM/RPROM KEY FEATURES • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs • Ultra-Fast Access Time — 45 ns • Low Power Consumption • Immune to Latch-UP • Fast Programming — Up to 200 mA

16A4

Abstract: 16L8 16R4 16R6 16R8 16X4 L6C1
Contextual Info: Data Sheets SECTION 2 2 9 National Semiconductor Program m able Array Logic PAL Description The PAL® fam ily utilizes National Sem icon­ d u cto r’s S chottky TTL process and bipolar PROM fu sib le -lin k tech n o lo g y to provide user-program m able logic to replace conven­

Contextual Info: 5ME » • •=]S 3 ^ t.T □ 0001235 310 ■ UAF WS57C49C WAFER SCALE INT EGRATION 7 W É -/3 -2 -* ? HIGH SPEED 8Kx 8 CMOS PROM/RPROM K EY FEATURES • Ultra-Fast Access Time • Pin Compatible with Bipolar PROMs • Immune to Latch-UP — *acc = 25 ns —

57C191C

Abstract: A921A 57c291 57c191
Contextual Info: WS57C191 C/291 C HIGH SPEED 2 K x 8 CMOS PROM/RPROM KEY FEATURES • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs • Ultra-Fast Access Time “ ACC = 25 ns — t c s = 12 ns • Immune to Latch-UP • Low Power Consumption — Up to 200 m A

2 k bipolar prom

Abstract: 3A4C
Contextual Info: WS57C191 C/291 C MILITARY HIGH SPEED 2 K x 8 CMOS PROM/RPROM KEY FEATURES • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs • Ultra-Fast Access Time — *ACC = 35 ns — t c s = 20 ns • Immune to Latch-UP • Low Power Consumption — Up to 200 mA

Contextual Info: WS57C191 C/291 C HIGH SPEED 2 K x 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs — *ACC = 25 ns — t c s = 12 ns • Immune to Latch-UP • Low Power Consumption — Up to 200 mA

3636B

Abstract: 3636B-1 3636B-2
Contextual Info: irrte» P IM U K Ä Ä ii7 16K (2K X 3636B 8 BIPOLAR PROM 3636B-1 3636B-2 3636B 35 ns Max. 45 ns Max. 55 ns Max. Fast Access Time: 25 ns Typically Low Power Dissipation: 0.05 mW/Bit Typically Three Chip Select Inputs for Easy Memory Expansion ±10% Power Supply Tolerance

Contextual Info: WS57C191 C/291 C HIGH SPEED 2 K x 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time — lACC = 25 • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs ns — t c s = 12 ns • Immune to Latch-UP • Low Power Consumption — Up to 200 mA

Contextual Info: WS57C191 C/291 C MILITARY HIGH SPEED 2 K x 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs — Iacc = 35 ns — t c s = 20 ns • Immune to Latch-UP • Low Power Consumption — Up to 200 mA

Contextual Info: WS57C191 C/291 C MILITARY HIGH SPEED 2 K x 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs — *ACC = 35 ns — t c s = 20 ns • Immune to Latch-UP • Low Power Consumption — Up to 200 mA

intel 4308

Abstract: 221-121 4001 intel rom Intel 4001 P 4308 INTEL I8022 intel 8755 8021 microcomputer C2608 D8355
Contextual Info: P ß S O IS S lO K IÄ IS V 3636B 16K 2K x 8 BIPOLAR PROM 3636B-1 35 ns M ax 3636B-2 45 ns M ax • Fast Access Time: 25 ns Typically ■ Three-State Outputs ■ Low Power Dissipation: 0.05mW/Biit Typically ■ Hermetic 24-Pin DIP ■ Polycrystalline Silicon Fuses for

Contextual Info: WS57C43C P R E L IM IN A R Y HIGH SPEED 4K x 8 CMOS PROM/RPROM K E Y FEA TU R E S • Pin Compatible with 4K x 8 Bipolar PROMs • Immune to Latch-UP • Ultra-Fast Access Time - ' a c c = 25 ns — >cs = ' 2 ns — Up to 200 mA • Low Power Consumption • ESD Protection Exceeds 2000 V

K0218

Abstract: 58174 SF 119 D AM2903A DA03 AM2902a MSS-44
Contextual Info: r '• Am2903A Four-Bit Bipolar Microprocessor Slice > 3 DISTINCTIVE CHARACTERISTICS M O o Built-in Normalization L o g ic - Expan dable R eg ister File T h e A m 2 9 0 3 A in c lu d e s th e n e c e s s a ry " h o o k s " to e x p a n d th e re g is te r file e x te rn a lly to a n y n u m b e r o f

DAC713

Contextual Info: Ì-7134B, DAC-7134U14-Bit Microprocessor-compatible Multiplying D/A Converters FEATURES GENERAL DESCRIPTION • 14-Bit linearity 0.003% FSR The DAC-7134 achieves true 14-bit linearity by combining a fourquadrant, multiplying DAC with on-chip, PROM-controlled correc­

1B35

Abstract: 82S181A
Contextual Info: Product specification Philips Semiconductors Military Bipolar Memory Products 82S181A 8K-bit TTL bipolar PROM 1024 x 8 FEATURES DESCRIPTION • Address access time: 55ns max The 82S181A is field-programmable, which means that custom patterns are immediately available by following the Philips Generic I

82S137

Abstract: f0035 "Bipolar PROM" GDFP2-F18 GDIP1-T18 dip 18pin ic
Contextual Info: Philips Semiconductors Military Bipolar Memory Products Product specification 4K-bit TTL bipolar PROM 1024 x 4 82S137 FEA TU R ES DESCRIPTION • Address access time: 70ns max The 82S137 is field-programmable, which means that custom patterns are immediately available by following the Philips Generic I

signetics 82S129

Abstract: Signetics 82S126 82S126 prom 82S126 1K BIT TTL BIPOLAR PROM OI Bipolar Logic
Contextual Info: Signetics 82S126 82S129 1K-Bit TTL Bipolar PROM Product Specification Military Bipolar Memory Products DESCRIPTION Th e 82S 126 and FEATURES 82S 129 are field APPLICATIONS • Address access time: 60ns max • Prototyping/volume production program mable, which m eans that custom

GDFP2-F16

Abstract: 82S123 82S23 GDIP1-T16 ScansUX81 82S123B
Contextual Info: Philips Semiconductors Military Bipolar Memory Products Product specification 256-bit TTL bipolar PROM 32 x 8 K v ' 82S23/S23A/S23B 82S123/123A/123B APPLICATIONS DESCRIPTION • Prototyping/volume production The 82S23 and 82S123 are field-programmable, which means that

82S191

Abstract: 82S191/BKA 82S191/B3A 82S191A 82S191A/BLA GDIP3-T24
Contextual Info: Philips Sem icond uctors M ilitary B ipolar M em ory Products P rod uct specification 16K-bit TTL bipolar PROM 2048 x 8 82S191, 82S191A FEATURES DESCRIPTION • Address access time: The 82S191 and 82S191A are field programmable, which means that custom patterns are immediately available by following the

HP5082-2811

Abstract: AN 7134 NV11 IC AN 7134 7134 OP-AMP 339 PIN DIAGRAM DAC-7134B binary weight resistance dac DAC713
Contextual Info: DATEL INC □ 7E D llO M n E L SbSlSbl G0Q.0ÛLS b DAC-7134B, DAC-7r134U 14-Bit Microprocessor-compatible Multiplying D/A Converters T-5 -09-90 FEATUR ES G E N E R A L DESCRIPTION • 14-Blt linearity (0.003% FSR The DAC-7134 achieves true 14-blt linearity by combining a fourquadrant, multiplying DAC with on-chip, PROM-controlled correc­

8 bit ttl mux

Abstract: 82HS321 82HS321A
Contextual Info: Philips Semiconductors Military Bipolar Memory Products Product specification 32K-bit TTL bipolar PROM 4096 x 8 82HS321A FEATURES APPLICATIONS DESCRIPTION • Address access time: • Prototyping/volume production The 82HS321 is field programmable, which