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    2 BANKS X 512K X 16 Search Results

    2 BANKS X 512K X 16 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    SMV512K32HFG
    Texas Instruments 16MB Radiation-Hardened SRAM 76-CFP -55 to 125 Visit Texas Instruments Buy
    SMV512K32HFG/EM
    Texas Instruments 16MB Radiation-Hardened SRAM 76-CFP 25 Only Visit Texas Instruments

    2 BANKS X 512K X 16 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    A43L0616A

    Abstract: A43L0616AV
    Contextual Info: A43L0616A 512K X 16 Bit X 2 Banks Synchronous DRAM Document Title 512K X 16 Bit X 2 Banks Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue December 4, 2000 Preliminary 0.1 Add input/output capacitance specification February 13, 2001


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    A43L0616A A43L0616A A43L0616AV PDF

    Contextual Info: K4S161622E CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 0.2 Oct 2002 Samsung Electronics reserves the right to change products or specification without notice. Rev 0.2 Oct. '02 K4S161622E CMOS SDRAM 512K x 16Bit x 2 Banks Synchronous DRAM


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    K4S161622E 16bit 2K/32ms) 50-TSOP2-400CF 20MAX 10MAX 075MAX PDF

    K4S161622E-TC10

    Abstract: K4S161622E-TC60 K4S161622E K4S161622E-TC55 K4S161622E-TC70 K4S161622E-TC80
    Contextual Info: K4S161622E CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 1.1 Jan 2003 Samsung Electronics reserves the right to change products or specification without notice. Rev 1.1 Jan '03 K4S161622E CMOS SDRAM 512K x 16Bit x 2 Banks Synchronous DRAM


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    K4S161622E 16bit K4S161622E 50-TSOP2-400CF 20MAX 10MAX 075MAX K4S161622E-TC10 K4S161622E-TC60 K4S161622E-TC55 K4S161622E-TC70 K4S161622E-TC80 PDF

    A43L0616

    Contextual Info: A43L0616 512K X 16 Bit X 2 Banks Synchronous DRAM Document Title 512K X 16 Bit X 2 Banks Synchronous DRAM Revision History Rev. No. 0.0 History Issue Date Remark Initial issue October 6, 1999 Final October, 1999, Version 0.0 AMIC Technology, Inc. A43L0616


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    A43L0616 A43L0616 PDF

    2 Banks x 512K x 16

    Abstract: A43L0616A A43L0616AV
    Contextual Info: A43L0616A 512K X 16 Bit X 2 Banks Synchronous DRAM Document Title 512K X 16 Bit X 2 Banks Synchronous DRAM Revision History Rev. No. History Issue Date Remark 0.0 Initial issue December 4, 2000 Preliminary 0.1 Add input/output capacitance specification February 13, 2001


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    A43L0616A Single-047 2 Banks x 512K x 16 A43L0616A A43L0616AV PDF

    K4S161622E-TC60

    Abstract: K4S161622E-TC80 K4S161622E K4S161622E-TC10 K4S161622E-TC70 samsung k4s161622e
    Contextual Info: K4S161622E CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 0.0 March 2001 Samsung Electronics reserves the right to change products or specification without notice. Rev 0.0 Mar. '01 K4S161622E CMOS SDRAM 512K x 16Bit x 2 Banks Synchronous DRAM


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    K4S161622E 16bit K4S161622E 50-TSOP2-400CF 20MAX 10MAX 075MAX K4S161622E-TC60 K4S161622E-TC80 K4S161622E-TC10 K4S161622E-TC70 samsung k4s161622e PDF

    A43L0616B

    Abstract: A43L0616BV
    Contextual Info: A43L0616B Preliminary 512K X 16 Bit X 2 Banks Synchronous DRAM Document Title 512K X 16 Bit X 2 Banks Synchronous DRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue May 10, 2005 Preliminary May, 2005, Version 0.0 AMIC Technology, Corp.


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    A43L0616B A43L0616B A43L0616BV PDF

    A43L0616BV-7F

    Abstract: A43L0616B A43L0616BV
    Contextual Info: A43L0616B 512K X 16 Bit X 2 Banks Synchronous DRAM Document Title 512K X 16 Bit X 2 Banks Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue May 12, 2003 Preliminary 0.1 Change AC Timing & DC Value February 27, 2006 1.0 Final version release


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    A43L0616B A43L0616BV-7F A43L0616B A43L0616BV PDF

    A43E06161

    Abstract: A43E06161V
    Contextual Info: A43E06161 Preliminary 512K X 16 Bit X 2 Banks Synchronous DRAM Document Title 512K X 16 Bit X 2 Banks Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue May 3, 2005 Preliminary 0.1 Modify tSS from 3ns to 2ns July 31, 2005 Rev. No.


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    A43E06161 A43E06161 A43E06161V PDF

    Contextual Info: A43P0616 512K X 16 Bit X 2 Banks Synchronous DRAM Document Title 512K X 16 Bit X 2 Banks Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue October 18, 2006 Preliminary 0.1 Add ICC7 January 8, 2007 0.2 Add industrial spec. March 5, 2007


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    A43P0616 PDF

    A43E06161

    Abstract: A43E06161V
    Contextual Info: A43E06161 Preliminary 512K X 16 Bit X 2 Banks Synchronous DRAM Document Title 512K X 16 Bit X 2 Banks Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue May 3, 2005 Preliminary 0.1 Modify tSS from 3ns to 2ns July 31, 2005 Rev. No.


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    A43E06161 50-pin A43E06161 A43E06161V PDF

    Contextual Info: Synchronous DRAM CS56A16163 512K x 16 Bit x 2 Banks Revision History Rev. No. 1.0 Initial issue History Issue Date Mar.30, 2005 1 Remark Rev. 1.0 Chiplus reserves the right to change product or specification without notice. Synchronous DRAM CS56A16163 512K x 16 Bit x 2 Banks


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    CS56A16163 CS56A16163 216-bits 288x16. 100MHz PDF

    8X13

    Abstract: A43L0632
    Contextual Info: A43L0632 Preliminary 512K X 32 Bit X 2 Banks Synchronous DRAM Document Title 512K X 32 Bit X 2 Banks Synchronous DRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue August 1, 2005 Preliminary August, 2005, Version 0.0 AMIC Technology, Corp.


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    A43L0632 MO-205. 8X13 A43L0632 PDF

    Contextual Info: A43L0632 Preliminary 512K X 32 Bit X 2 Banks Synchronous DRAM Document Title 512K X 32 Bit X 2 Banks Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue August 1, 2005 Preliminary 0.1 Add part numbering scheme February 20, 2008 Rev. No.


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    A43L0632 MO-205. PDF

    8X13

    Abstract: A43E06321
    Contextual Info: A43E06321 Preliminary 512K X 32 Bit X 2 Banks Low Power Synchronous DRAM Document Title 512K X 32 Bit X 2 Banks Low Power Synchronous DRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue July 21, 2005 Preliminary July, 2005, Version 0.0


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    A43E06321 MO-205. 8X13 A43E06321 PDF

    MT48LCM32B2

    Abstract: MT48LC2M3B2b5 MT48LCM32B2P MT48LCM32 Micron Technology automotive
    Contextual Info: Preliminary‡ 64Mb: x32 Automotive SDRAM Features Automotive SDR SDRAM MT48LC2M32B2 – 512K x 32 x 4 Banks Features Options Marking • Configuration – 2 Meg x 32 512K x 32 x 4 banks • Plastic package – OCPL on page – 86-pin TSOP II (400 mil) standard


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    MT48LC2M32B2 PC100-compliant 4096-cycle, 09005aef811ce1fe) 09005aef84d5580d MT48LCM32B2 MT48LC2M3B2b5 MT48LCM32B2P MT48LCM32 Micron Technology automotive PDF

    W9864G2GH-7

    Abstract: w9864g2gh7
    Contextual Info: W9864G2GH 512K X 4 BANKS X 32BITS SDRAM Table of Contents1. GENERAL DESCRIPTION . 3 2. FEATURES . 3


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    W9864G2GH 32BITS W9864G2GH-7 w9864g2gh7 PDF

    CKE 2009

    Abstract: W9864G2IH W9864G2IH-6 W9864G2iH-6I
    Contextual Info: W9864G2IH 512K X 4 BANKS X 32BITS SDRAM Table of Contents1. GENERAL DESCRIPTION . 3 2. FEATURES . 3


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    W9864G2IH 32BITS CKE 2009 W9864G2IH W9864G2IH-6 W9864G2iH-6I PDF

    transistor 6c x

    Abstract: W9864G2GH W9864G2GH-5 W9864G2GH-6 W9864G2GH-6C
    Contextual Info: W9864G2GH 512K X 4 BANKS X 32BITS SDRAM Table of Contents1. GENERAL DESCRIPTION . 3 2. FEATURES . 3


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    W9864G2GH 32BITS transistor 6c x W9864G2GH W9864G2GH-5 W9864G2GH-6 W9864G2GH-6C PDF

    W9864G2GH-6I

    Abstract: W9864G2GH W9864G2GH-5
    Contextual Info: W9864G2GH 512K X 4 BANKS X 32BITS SDRAM Table of Contents1. GENERAL DESCRIPTION . 3 2. FEATURES . 3


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    W9864G2GH 32BITS W9864G2GH-6I W9864G2GH W9864G2GH-5 PDF

    Contextual Info: 64Mb: x32 SDRAM Features SDR SDRAM MT48LC2M32B2 – 512K x 32 x 4 Banks Features Options Marking • Configuration – 2 Meg x 32 512K x 32 x 4 banks • Plastic package – OCPL1 – 86-pin TSOP II (400 mil) standard – 86-pin TSOP II (400 mil) Pb-free


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    MT48LC2M32B2 86-pin 90-ball PC100-compliant 09005aef811ce1fe PDF

    Contextual Info: 64Mb: x32 SDRAM Features SDR SDRAM MT48LC2M32B2 – 512K x 32 x 4 Banks Features Options Marking • Configuration – 2 Meg x 32 512K x 32 x 4 banks • Plastic package – OCPL1 – 86-pin TSOP II (400 mil) standard – 86-pin TSOP II (400 mil) Pb-free


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    MT48LC2M32B2 PC100-compliant 4096-cycle 09005aef811ce1fe PDF

    MT48LCM32B2P

    Abstract: MT48LCM32B2 x32s
    Contextual Info: 64Mb: x32 SDRAM Features SDR SDRAM MT48LC2M32B2 – 512K x 32 x 4 Banks Features Options Marking • Configuration – 2 Meg x 32 512K x 32 x 4 banks • Plastic package – OCPL1 – 86-pin TSOP II (400 mil) standard – 86-pin TSOP II (400 mil) Pb-free


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    MT48LC2M32B2 PC100-compliant 4096-cycle, 09005aef811ce1fe MT48LCM32B2P MT48LCM32B2 x32s PDF

    MT48LC2M3B2b5

    Abstract: MT48LCM32B2 MT48LCM32B2P MT48LC2M3B2 MT48LCM32 SMD MARKING code tac 63 ball fbga thermal resistance micron MT48LC4M16A2B4-6A IT 64Mb SDRAM is a high-speed CMOS
    Contextual Info: 64Mb: x32 SDRAM Features SDR SDRAM MT48LC2M32B2 – 512K x 32 x 4 Banks Features Options Marking • Configuration – 2 Meg x 32 512K x 32 x 4 banks • Plastic package – OCPL1 – 86-pin TSOP II (400 mil) standard – 86-pin TSOP II (400 mil) Pb-free


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    MT48LC2M32B2 PC100-compliant 4096-cycle 09005aef811ce1fe MT48LC2M3B2b5 MT48LCM32B2 MT48LCM32B2P MT48LC2M3B2 MT48LCM32 SMD MARKING code tac 63 ball fbga thermal resistance micron MT48LC4M16A2B4-6A IT 64Mb SDRAM is a high-speed CMOS PDF