2 BANKS X 512K X 16 Search Results
2 BANKS X 512K X 16 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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MD27512-25/B |
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27512 - 512K (64K x 8) EPROM |
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D27512-25 |
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27512 - 512K (64K x 8) EPROM |
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27C512-75DC |
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27C512 - 512K (64K x 8) CMOS EPROM |
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AM27C512-200DC |
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AM27C512 - 512K (64K x 8) CMOS EPROM |
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AM27C512-200DI |
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AM27C512 - 512K (64K x 8) CMOS EPROM |
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2 BANKS X 512K X 16 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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A43L0616A
Abstract: A43L0616AV
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Original |
A43L0616A A43L0616A A43L0616AV | |
Contextual Info: A43L0616A 512K X 16 Bit X 2 Banks Synchronous DRAM Document Title 512K X 16 Bit X 2 Banks Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue December 4, 2000 Preliminary 0.1 Add input/output capacitance specification February 13, 2001 |
Original |
A43L0616A | |
A43L0616A
Abstract: A43L0616AV
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Original |
A43L0616A A43L0616A A43L0616AV | |
Contextual Info: K4S161622E CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 0.2 Oct 2002 Samsung Electronics reserves the right to change products or specification without notice. Rev 0.2 Oct. '02 K4S161622E CMOS SDRAM 512K x 16Bit x 2 Banks Synchronous DRAM |
Original |
K4S161622E 16bit 2K/32ms) 50-TSOP2-400CF 20MAX 10MAX 075MAX | |
K4S161622E-TC10
Abstract: K4S161622E-TC60 K4S161622E K4S161622E-TC55 K4S161622E-TC70 K4S161622E-TC80
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K4S161622E 16bit K4S161622E 50-TSOP2-400CF 20MAX 10MAX 075MAX K4S161622E-TC10 K4S161622E-TC60 K4S161622E-TC55 K4S161622E-TC70 K4S161622E-TC80 | |
A43L0616Contextual Info: A43L0616 512K X 16 Bit X 2 Banks Synchronous DRAM Document Title 512K X 16 Bit X 2 Banks Synchronous DRAM Revision History Rev. No. 0.0 History Issue Date Remark Initial issue October 6, 1999 Final October, 1999, Version 0.0 AMIC Technology, Inc. A43L0616 |
Original |
A43L0616 A43L0616 | |
2 Banks x 512K x 16
Abstract: A43L0616A A43L0616AV
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Original |
A43L0616A Single-047 2 Banks x 512K x 16 A43L0616A A43L0616AV | |
Contextual Info: A43E06161 Preliminary 512K X 16 Bit X 2 Banks Synchronous DRAM Document Title 512K X 16 Bit X 2 Banks Synchronous DRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue May 3, 2005 Preliminary May, 2005, Version 0.0 AMIC Technology, Corp. |
Original |
A43E06161 50-pin | |
K4S161622E-TC60
Abstract: K4S161622E-TC80 K4S161622E K4S161622E-TC10 K4S161622E-TC70 samsung k4s161622e
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Original |
K4S161622E 16bit K4S161622E 50-TSOP2-400CF 20MAX 10MAX 075MAX K4S161622E-TC60 K4S161622E-TC80 K4S161622E-TC10 K4S161622E-TC70 samsung k4s161622e | |
A43L0616B
Abstract: A43L0616BV
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Original |
A43L0616B A43L0616B A43L0616BV | |
Contextual Info: A43L0616B 512K X 16 Bit X 2 Banks Synchronous DRAM Document Title 512K X 16 Bit X 2 Banks Synchronous DRAM Revision History Rev. No. 0.0 History Issue Date Remark Initial issue February 7, 2006 Preliminary Preliminary February, 2006, Version 0.0 AMIC Technology, Corp. |
Original |
A43L0616B | |
A43L0616BV-7F
Abstract: A43L0616B A43L0616BV
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Original |
A43L0616B A43L0616BV-7F A43L0616B A43L0616BV | |
A43E06161
Abstract: A43E06161V
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Original |
A43E06161 A43E06161 A43E06161V | |
Contextual Info: A43L0616B 512K X 16 Bit X 2 Banks Synchronous DRAM Document Title 512K X 16 Bit X 2 Banks Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue May 12, 2003 Preliminary 0.1 Change AC Timing & DC Value February 27, 2006 1.0 Final version release |
Original |
A43L0616B | |
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Contextual Info: A43P0616 512K X 16 Bit X 2 Banks Synchronous DRAM Document Title 512K X 16 Bit X 2 Banks Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue October 18, 2006 Preliminary 0.1 Add ICC7 January 8, 2007 0.2 Add industrial spec. March 5, 2007 |
Original |
A43P0616 | |
Contextual Info: A43E06161 Preliminary 512K X 16 Bit X 2 Banks Synchronous DRAM Document Title 512K X 16 Bit X 2 Banks Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue May 3, 2005 Preliminary 0.1 Modify tSS from 3ns to 2ns July 31, 2005 Rev. No. |
Original |
A43E06161 | |
Contextual Info: A43L0616B 512K X 16 Bit X 2 Banks Synchronous DRAM Document Title 512K X 16 Bit X 2 Banks Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue May 12, 2003 Preliminary 0.1 Change AC Timing & DC Value February 27, 2006 1.0 Final version release |
Original |
A43L0616B | |
A43E06161
Abstract: A43E06161V
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Original |
A43E06161 50-pin A43E06161 A43E06161V | |
Contextual Info: A43E06161 Preliminary 512K X 16 Bit X 2 Banks Synchronous DRAM Document Title 512K X 16 Bit X 2 Banks Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue May 3, 2005 Preliminary 0.1 Modify tSS from 3ns to 2ns July 31, 2005 Rev. No. |
Original |
A43E06161 | |
Contextual Info: Synchronous DRAM CS56A16163 512K x 16 Bit x 2 Banks Revision History Rev. No. 1.0 Initial issue History Issue Date Mar.30, 2005 1 Remark Rev. 1.0 Chiplus reserves the right to change product or specification without notice. Synchronous DRAM CS56A16163 512K x 16 Bit x 2 Banks |
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CS56A16163 CS56A16163 216-bits 288x16. 100MHz | |
8X13
Abstract: A43L0632
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Original |
A43L0632 MO-205. 8X13 A43L0632 | |
8X13
Abstract: A43E06321
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Original |
A43E06321 MO-205. 8X13 A43E06321 | |
Contextual Info: A43L0632 Preliminary 512K X 32 Bit X 2 Banks Synchronous DRAM Document Title 512K X 32 Bit X 2 Banks Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue August 1, 2005 Preliminary 0.1 Add part numbering scheme February 20, 2008 Rev. No. |
Original |
A43L0632 MO-205. | |
Contextual Info: A43E06321 Preliminary 512K X 32 Bit X 2 Banks Low Power Synchronous DRAM Document Title 512K X 32 Bit X 2 Banks Low Power Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue July 21, 2005 Preliminary 0.1 Add part numbering scheme |
Original |
A43E06321 MO-205. |