1X359 Search Results

Contextual Info: IBM13T2649JC 2M x 64 S D R A M SO DIMM Features • 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-Iine Memory Module • 2Mx64 Synchronous DRAM SO DIMM • Performance: 10 CAS Latency J Units j 3 jfcK I Clock Frequency j 100 j MHz ! jtcK

Contextual Info: IB M 1 3 T 1 6 4 9 N C Preliminary 1M x 64 1 Bank SDRAM SO DIMM Features • 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 2Mx64 Synchronous DRAM SO DIMM • Performance: I 10 CAS Latency 3 ! 12 j Units ! 3 jfcK I Clock Frequency

Contextual Info: IBM11M32735B IBM11M32735C 32M x 72 DRAM Module Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • System Performance Benefits: - Buffered inputs except RAS, Data - Reduced noise (32 VSs/V cc P^s) - 4 Byte Interleave enabled - Buffered PDs

Contextual Info: IBM11T4645MP IBM11T8645MP 4M /8M x 64 144 PIN SO DIMM Features • Au contacts • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Optimized for byte-write non-parity applications • 4M/8Mx64 Extended Data Out SO DIMM

1X359

Contextual Info: IBM11M1645L 1M X 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 1 Mx64 Extended Data Out Page Mode DIMM • Performance: -60 -70 tRAC ; RAS Access Tim e 60ns ; 70ns tcAC ! CAS Access Tim e 20ns ! 25ns W | Access Tim e From Address

Contextual Info: IBM13T2649NC 2M x 64 2 Bank SDRAM SO DIMM Features • 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 2Mx64 Synchronous DRAM SO DIMM • Performance: CAS Latency • • • • • • jfcK I Clock Frequency jtcK i Clock Cycle

Contextual Info: IB M 1 1 M 8 6 4 5 H 8M x 64 D RAM M O D U LE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 8Mx64 Extended Data Out Mode DIMM • Optimized for ECC applications • System Performance Benefits: -Buffered inputs except RAS, Data

Contextual Info: IBM11M16735B IBM11M16735C 16M x 72 DRAM Module Features • 168-Pin JEDEC-Standard 8-Byte Dual In-Line Memory Module • Optimized for ECC applications • System Performance Benefits: - Buffered inputs except RAS, Data - Reduced noise (32 VSs/V cc P^s)

Contextual Info: IBM11N16645B IBM11N16735B IBM11N16645C IBM11N16735C 16M x 64/72 DRAM MODULE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 16Mx64, 16Mx72 Extended Data Out Page Mode DIMMs • Performance: -60 ! i^RAC ! R A S Access Tim e

Contextual Info: IBM11N32645B IBM11N32735B IBM11N32645C IBM11N32735C 32M x 64/72 DRAM Module Features • 168-Pin JEDEC-Standard Unbuffered 8-Byte Dual In-Line Memory Module • 32Mx64, 32Mx72 Dual Bank Extended Data Out Page Mode DIMMs • Performance: • System Performance Benefits:

Contextual Info: IBM11M16735B IBM11M16735C 16M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • System Performance Benefits: - Buffered inputs except RAS, Data - Reduced noise (32 VSs/Vcc P^s) - Buffered PDs • 16Mx72 Extended Data Out (EDO) Mode

Contextual Info: IBM11M32730B IBM11M32730C 32M x 72 DRAM Module Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 32Mx72 Dual Bank Fast Page Mode DIMM • Performance: • System Performance Benefits: -Buffered inputs (except RAS, Data) -Reduced noise (32 VSs/V cc P^s)

ix335

Contextual Info: I =¥= = = = ’= IBM13N16644HC IBM13N16734HC P relim inary 16M x 64/72 2 Bank U nbuffered SDRAM M odule Features • Programmable Operation: - CAS Latency: 2, 3 - Burst Type: Sequential or Interleave - Burst Length: 1, 2, 4, 8, Full-Page FullPage supports Sequential burst only

Contextual Info: IBM11T1645LP 1M x 64 144 PIN SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Au contacts • Optimized for byte-write non-parity applications • 1 Mx64 Extended Data Out SO DIMM • Performance:

Contextual Info: IBM11N8645H IBM11N8735H 8M x 64/72 D RAM M O D U LE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module Optimized for byte-write non-parity, or ECC applications • 8Mx64, 8Mx72 Extended Data Out Page Mode DIMMs System Performance Benefits:

Contextual Info: I = = = = ¥ = = = ’ = IB M 1 3 N 8 6 4 4 H C IB M 1 3 N 8 7 3 4 H C P relim inary 8M x 64/72 1 B ank U nbuffered S D R A M M odule Features • Programmable Operation: - CAS Latency: 2, 3 - Burst Type: Sequential or Interleave - Burst Length: 1, 2, 4, 8, Full-Page FullPage supports Sequential burst only

Contextual Info: I = = = = ¥ = IB M 1 3 N 8 6 4 4 H C = IB M 1 3 N 8 7 3 4 H C = ’ = P relim inary 8M x 64/72 1 B ank U nbuffered S D R A M M odule Features • Programmable Operation: - CAS Latency: 2, 3 - Burst Type: Sequential or Interleave - Burst Length: 1, 2, 4, 8, Full-Page FullPage supports Sequential burst only

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154