1V17 Search Results

v17805

Abstract: MSM51V17805BSL msm51v17805b
Contextual Info: O K I Semiconductor MSM5 1V17805 B/BSL_ E 2 G 0 0 7 9 -1 7 -4 1 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The M SM 1V17805B/BSL is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The 1V17805B /B SL achieves high integration, high-speed operation, and

Contextual Info: O K I Semiconductor MSM5 1V17805 B/BSL_ E 2 G 0 0 7 9 -1 7 -4 1 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The M SM 1V17805B/BSL is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The 1V17805B /B SL achieves high integration, high-speed operation, and

1v17

Contextual Info: P U M A 2 U2 0 0 0 m o i a i c PUMA 2U2000-12/15/17/20 Issue 12 .: February 1990 ADVANCE PRODUCT INFORMATION Semiconductor Inc. Pin Definition 1.048.576 bit CMOS High Speed UV EPROM FMtures User Configurable as 8,16 or 32 bit wide. Very Fast access times of 120/150/170/200 ns.

TEA1030

Abstract: T77-0-7 TEA1030B
Contextual Info: S G S-THOriSON 7flc m H •JEW*] SEMICONDUCTORS » I □ □ d ^ i m I T-77-Ô7-/J TEA1030B TV V ID E O PROCESSING I.C FOR COLOR TV SET T V V ID E O PRO C ESSIN G Ï.C FOR COLOR TV SET T h e T E À 1 0 3 0 B ¡s a new video processor I.C com patible w ith all standards

NTE74HC4067

Abstract: NTE4097B NTE74HC299 NTE4017B NTE4007 NTE4023B NTE4027B NTE74HC4053 NTE4553B NTE74HC165
Contextual Info: Semiconductors Integrated Circuits Integrated Circuits cont. Part Number Description NTE40175B IC-CMOS, Quad D-Type Flip-Flop NTE4017B IC-CMOS, Decade Counter w/10 Decoder Outputs NTE40182B IC-CMOS, Look Ahead Carry Generator Part Number Description NTE4018B

101ZZ

Abstract: m1s23 PDCR 900 TLCS-900 TMP94C241C TMP94C241CF M2S22 PDCR 940 MNS20 B5WR
Contextual Info: TOSHIBA TMP94C241C CMOS 32-bit Microcontroller TMP94C241CF 1. O u t lin e an d Device Characteristics TMP94C241C is high-speed advanced 32-bit micro-controller developed for controlling equipment which processes mass data. TMP94C241C is a micro-controller which has a high-performance CPU 900/H2 CPU and various

1V130

Abstract: NTE1V095 2V130 1V025 NTE2V480 524V15 NTE524V13 524V13 1V150 NTE2V095
Contextual Info: NTE1V010 thru NTE1V300 NTE2V010 thru NTEV480 NTE524V13 thru NTE524V48 Metal Oxide Varistors MOV Description: The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high transient current handling capability when high voltage is applied. Static resistance is, however, very high under low voltage conditions, permitting low standby drain currents.

0s18

Abstract: 100ZZ
Contextual Info: TO SH IB A TMP94C251A CMOS 32-bit M icro con tro ller TMP94C251AF 1. Outline and Device Characteristics TMP94C251A is high-speed advanced 32-bit micro-controller developed for controlling equipm ent which processes m ass data. TMP94C251A is a micro-controller which has a high-performance CPU 900/H2 CPU and various

oz 9976

Abstract: ojp 241 E112 FET E110 FET 11zs1 LHi 1128 lt 175 1111 E55 ferrite le24 G2L 113
Contextual Info: MIL-M-38510/121A 4 June 1984 su p tR S tu n rG MIL-M-38510/121 2 F e b r u a r y 1982 military specification M I C R O C I R C U I T S , L I NEAR MONOLITHIC AND M U L TI CH I P , 12 B I T DI GI TAL - TO- ANAL OG CONVERTERS SILICON T h i s s p e c i f i c a t i o n is a p p r o v e d for use by all D e p a r t ­

524V13

Abstract: NTE524V13 524V15 524V25 2V025 1V130 2V130 varistor 150f NTE1V095 2V020
Contextual Info: NTE1V010 thru NTE1V300 NTE2V010 thru NTEV480 NTE524V13 thru NTE524V48 Metal Oxide Varistors MOV Description: The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high transient current handling capability when high voltage is applied. Static resistance is, however, very high under low voltage conditions, permitting low standby drain currents.

Contextual Info: D ESIG N E D FOR USE WITH 0 . 0 47 S E M I - R I G I D CABLE CABLE ENTRY DIAM ETER MINIMUM HOUSING REVISIONS DESCRIPTION REV DATE tk REVISED 01 2 APPROVED 7&C .050 JACK RECOMMENDED MOUNTING HOLE HOUSING MOUNTING NUT LOCKWASHER S T A I N L E S S S T E E L PER

1V130

Abstract: 320/20 METAL OXIDE VARISTOR NTE1V095 NTE524V13 524V13 524V25 1V300 2V025 2V130 524V15
Contextual Info: NTE1V010 thru NTE1V300 NTE2V010 thru NTEV480 NTE524V13 thru NTE524V48 Metal Oxide Varistors MOV Description: The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high transient current handling capability when high voltage is applied. Static resistance is, however, very high under low voltage conditions, permitting low standby drain currents.

Contextual Info: NTE1V010 thru NTE1V300 NTE2V010 thru NTEV480 NTE524V13 thru NTE524V48 Metal Oxide Varistors MOV Description: The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high transient current handling capability when high voltage is applied. Static resistance is, however, very high under low voltage conditions, permitting low standby drain currents.

Contextual Info: TOSHIBA =10^7240 QQ 2ß 3 55 4b0 • 1V17800BNJS/BNTS60/70 PRELIMINARY 2,097,152 WORD X 8 BIT FAST PAGE DYNAMIC RAM Description The 1V17800BNTS/BNJS is the fast page dynamic RAM organized 2,097,152 words by 8 bits. The 1V17800BNTS/BNJS utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques

seven segment to BCD converter LM 7447 IC

Abstract: PH ON 823 m 0233 trk 1203 lm 7085 circuit diagram yd 803 1005 Ic Data 022d px8 ap TMP92C820F sis 6326
Contextual Info: Data Book 32bit Micro controller TLCS-900/H1 series TMP92C820F TENTATIVE Rev.1.4 05/Oct/2001 - Contents-1.Outline and Device Characteristics ･･･････････････････････ 92C820F-1 2. Pin Assignment and Functions ････････････････････････ 92C820F-5

524V13

Abstract: 524V25 2V035
Contextual Info: NTE1V010 thru NTE1V300 NTE2V010 thru NTEV480 NTE524V13 thru NTE524V48 Metal Oxide Varistors MOV Description: The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high transient current handling capability when high voltage is applied. Static resistance is, however, very high under low voltage conditions, permitting low standby drain currents.