1SS385F Search Results

Contextual Info: T O S H IB A 1SS385F TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 <; <; 3 » R F HIGH SPEED SWITCHING Unit in mm 1.6 ± 0.1 • Low Forward Voltage : Vp = 0.23 V Typ. @Ip = 5 mA • Ultra-Small Package 0.85 ±0.1 M A X IM U M RATINGS (Ta = 25°C)

1SS385F

Contextual Info: 1SS385F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385F High Speed Switching Unit: mm l Low forward voltage: VF = 0.23V typ. @IF = 5mA l Ultra-small package Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage

VR101

Abstract: 1SS385FV
Contextual Info: 1SS385FV 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS385FV ○ 高速スイッチング用 単位: mm 0.22±0.05 電 電 圧 VRM 15 V 圧 VR 10 V せ ん 頭 順 電 流 IFM 200* mA 平 均 整 流 電 流 IO 100*

1SS385FV

Contextual Info: 1SS385FV TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385FV High-Speed Switching Applications 0.22±0.05 Unit: mm 0.32±0.05 z Low forward voltage: VF = 0.23 V typ. @IF = 5 mA 1.2±0.05 0.8±0.05 Symbol Rating Unit VRM 15 V Reverse voltage VR

Contextual Info: 1SS385F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385F High Speed Switching Unit: mm l Low forward voltage: VF = 0.23V typ. @IF = 5mA l Ultra-small package Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage

1SS385F

Contextual Info: 1SS385F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385F High Speed Switching Unit: mm Low forward voltage: VF = 0.23V typ. @IF = 5mA Ultra-small package Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage

Contextual Info: 1SS385FV TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385FV High-Speed Switching Applications 0.22±0.05 Unit: mm 0.32±0.05 z Low forward voltage: VF = 0.23 V typ. @IF = 5 mA 1.2±0.05 0.8±0.05 Symbol Rating Unit VRM 15 V Reverse voltage VR

xl marking

Abstract: 1SS385F
Contextual Info: TOSHIBA 1SS385F TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS385F Unit in mm HIGH SPEED SWITCHING 1.6 ± 0.1 • • 0.85 ±0.1 Low Forward Voltage : Vjr = 0.23 V Typ. @Ijr = 5 mA Ultra-Small Package M A X IM U M RATINGS (Ta = 25°C) RATING UNIT

Contextual Info: 1SS385FV TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385FV High-Speed Switching Applications 0.22±0.05 Unit: mm Rating Unit VRM 15 V Reverse voltage VR 10 V Maximum peak forward current IFM 200 * mA Average forward current IO 100 * mA IFSM

1SS385F

Contextual Info: 1SS385F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385F High Speed Switching Unit: mm z Low forward voltage: VF = 0.23V typ. @IF = 5mA z Ultra-small package Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage

7N09

Contextual Info: 1SS385F T O SH IB A TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS385F HIGH SPEED SWITCHING Unit in mm 1.6 ± 0.1 • • 0.85 ±0.1 Low Forward Voltage : Vp = 0.23 V Typ. @Ip = 5 mA Ultra-Small Package MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

1SS385F

Contextual Info: 1SS385F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385F High Speed Switching Unit in mm Low forward voltage: VF = 0.23V typ. @IF = 5mA Ultra-small package Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage

1SS385F

Contextual Info: 1SS385F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385F High Speed Switching Unit: mm z Low forward voltage: VF = 0.23V typ. @IF = 5mA z Ultra-small package Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage

1SS385FV

Contextual Info: 1SS385FV TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385FV High-Speed Switching Applications 0.22±0.05 Unit: mm Ultra-small package 1.2±0.05 0.32±0.05 Low forward voltage: VF = 0.23 V typ. @IF = 5 mA 0.8±0.05 Rating 0.4 Unit VRM 15 V Reverse voltage

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

Variable Capacitance Diodes

Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
Contextual Info: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

LT 543 common cathode

Abstract: CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2010/9 SCE0004K Rectifiers General-Purpose Rectifiers Average Forward Current

TPCA*8030

Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 （トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S

CMZB220

Abstract: CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 CRS30I30A CMZ24 CRS06 CRS10I30B
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 ダイオード 整流用ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツェナーダイオード スイッチングダイオード ショットキバリアダイオード