1SS385 Search Results

Contextual Info: T O S H IB A 1SS385F TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 <; <; 3 » R F HIGH SPEED SWITCHING Unit in mm 1.6 ± 0.1 • Low Forward Voltage : Vp = 0.23 V Typ. @Ip = 5 mA • Ultra-Small Package 0.85 ±0.1 M A X IM U M RATINGS (Ta = 25°C)

1SS385F

Contextual Info: 1SS385F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385F High Speed Switching Unit: mm l Low forward voltage: VF = 0.23V typ. @IF = 5mA l Ultra-small package Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage

1SS385

Contextual Info: 1SS385 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385 High Speed Switching Unit: mm z Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA z Small package Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage

VR101

Abstract: 1SS385FV
Contextual Info: 1SS385FV 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS385FV ○ 高速スイッチング用 単位: mm 0.22±0.05 電 電 圧 VRM 15 V 圧 VR 10 V せ ん 頭 順 電 流 IFM 200* mA 平 均 整 流 電 流 IO 100*

1SS385

Abstract: 1-2S1B
Contextual Info: 1SS385 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS385 ○ 高速スイッチング用 単位: mm z 小型外囲器なので高密度実装に最適です。 z 順方向電圧が低い。 : VF 2 = 0.23V (標準)

1SS385FV

Contextual Info: 1SS385FV TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385FV High-Speed Switching Applications 0.22±0.05 Unit: mm 0.32±0.05 z Low forward voltage: VF = 0.23 V typ. @IF = 5 mA 1.2±0.05 0.8±0.05 Symbol Rating Unit VRM 15 V Reverse voltage VR

Contextual Info: 1SS385 TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL SCH OTT KY BARRIER TYPE 1SS38 5 HIGH SPEED SWITCHING. • • U nit in mm 1. 6± 0.2 Low Forward Voltage : Vp 2 = 0.23V (Typ.) @Ip = 5mA Small Package ,0.8 ± 0.1 HO dö MAXIMUM RATINGS (Ta = 25°C) oo i—i

marking CS TOSHIBA

Contextual Info: 1SS385 TO SHIBA TOSHIBA DIODE HIGH SPEED SWITCHING. • • 1 SS385 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm 1 .6 Í0.2 Low Forward Voltage : Vp 2 = 0.23V (Typ.) @Ip = 5mA Small Package , 0 .8 ± 0.1 HO + ’I oo LD i- “i o M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: 1SS385F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385F High Speed Switching Unit: mm l Low forward voltage: VF = 0.23V typ. @IF = 5mA l Ultra-small package Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage

1SS385F

Contextual Info: 1SS385F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385F High Speed Switching Unit: mm Low forward voltage: VF = 0.23V typ. @IF = 5mA Ultra-small package Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage

Contextual Info: 1SS385 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385 High Speed Switching Unit: mm Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA Small package Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR

Contextual Info: 1SS385 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385 High Speed Switching Unit: mm z Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA z Small package Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage

Contextual Info: 1SS385FV TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385FV High-Speed Switching Applications 0.22±0.05 Unit: mm 0.32±0.05 z Low forward voltage: VF = 0.23 V typ. @IF = 5 mA 1.2±0.05 0.8±0.05 Symbol Rating Unit VRM 15 V Reverse voltage VR

xl marking

Abstract: 1SS385F
Contextual Info: TOSHIBA 1SS385F TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS385F Unit in mm HIGH SPEED SWITCHING 1.6 ± 0.1 • • 0.85 ±0.1 Low Forward Voltage : Vjr = 0.23 V Typ. @Ijr = 5 mA Ultra-Small Package M A X IM U M RATINGS (Ta = 25°C) RATING UNIT

1SS385F

Contextual Info: 1SS385F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385F High Speed Switching Unit: mm z Low forward voltage: VF = 0.23V typ. @IF = 5mA z Ultra-small package Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage

1SS385

Contextual Info: 1SS385 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385 High Speed Switching Unit: mm z Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA z Small package Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage

Contextual Info: 1SS385 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385 High Speed Switching Unit: mm l Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA l Small package Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage

7N09

Contextual Info: 1SS385F T O SH IB A TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS385F HIGH SPEED SWITCHING Unit in mm 1.6 ± 0.1 • • 0.85 ±0.1 Low Forward Voltage : Vp = 0.23 V Typ. @Ip = 5 mA Ultra-Small Package MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

1SS385F

Contextual Info: 1SS385F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385F High Speed Switching Unit in mm Low forward voltage: VF = 0.23V typ. @IF = 5mA Ultra-small package Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage

1SS385

Contextual Info: 1SS385 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385 High Speed Switching Unit: mm Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA Small package Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR

1SS385F

Contextual Info: 1SS385F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385F High Speed Switching Unit: mm z Low forward voltage: VF = 0.23V typ. @IF = 5mA z Ultra-small package Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage

1SS385FV

Contextual Info: 1SS385FV TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385FV High-Speed Switching Applications 0.22±0.05 Unit: mm Ultra-small package 1.2±0.05 0.32±0.05 Low forward voltage: VF = 0.23 V typ. @IF = 5 mA 0.8±0.05 Rating 0.4 Unit VRM 15 V Reverse voltage

1SS385

Contextual Info: 1SS385 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385 High Speed Switching Unit: mm l Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA l Small package Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage

toshiba diode 3D

Abstract: 1SS385
Contextual Info: 1SS385 TOSHIBA TOSHIBA DIODE 1SS385 HIGH SPEED SWITCHING. • • SILICON EPITAXIAL SCHOTTKY BARRIER TYPE U nit in mm Low Forward Voltage : Vp 2 —0.23V (Typ.) @Ip = 5mA Small Package MAXIMUM RATINGS (Ta = 25°C) SYMBOL RATING CHARACTERISTIC Maximum (Peak) Reverse Voltage