1SS TRANSISTOR Search Results

2n4033

Contextual Info: N AUER PHILIPS/DISCRETE bTE bbS3R31 QOSfilHb 1SS « A P X 2N4030 to 2N4033 » X SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-39 metal envelopes primarily intended for large signal, low-noise, low-power audio frequency applications for industrial service.

bfr84

Abstract: 71672 MSI MS-5 511 MOSFET
Contextual Info: BFR84 J '-SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type fieid-effect transistor in a metal TO-72 envelope w ith source and substrate connected to the case, intended fo r a wide range o f v.h.f. applications, such as v.h.f. television tuners, f.m . tuners,

Contextual Info: t>LS3T31 0024737 T4T « A P X N AMER PHILIPS/DISCRETE BF990AR L7E T> J V. SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic S O T 1 4 3 R microminiature envelope with source and substrate interconnected, intended for U H F applications, such as U H F television tuners and

BF982

Abstract: Transistor BF982 335kW Marking G2 SOT103
Contextual Info: 711Dfl2fcj GGtTSbl S7S M P H I N BF982 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected, intended for V H F applications, such as V H F television tuners, F M tuners, with 12 V supply voltage.

diode marking code YF

Abstract: BF992 bf992 m92
Contextual Info: • bts3T3i oo23bia an ■ apx BF992 N AUER P H I L I P S / D I S C R E T E b7E D SILICO N N-CHANNEL DUAL GATE M O S-FET Depletion type field-effect transistor in a plastic S O T 1 4 3 microminiature envelope with source and substrate interconnected. This M O S -F E T tetrode is intended for use in v.h.f. applications, such as v.h.f.

2SC2499

Abstract: 2sc4200 NPN Transistor TO92 300ma 2sa1161 Schottky Diode SC-62 transistor 2sc2499 1SV252 THS117, THS119 npntr 2sc2705 transistor
Contextual Info: Video Output Transistors for Video Display Terminal ^ P o j a r # y ' \ ^ ^ Package Description VcEO=10V, IcsO.SA fr=3.5GHz Vceo=18V, lc=0.6A fr=2.5GHz V ceo=100V, lc=0.5A D -P A C K TO-92 MOD '— TO-126 IS (Power-Mold) NPN 2SC3613 NPN 2SC4200 Remarks T0-220(NIS)

PF322D

Abstract: FCD890 PF222D transistor p02
Contextual Info: - 252- Dual LED -D arlington Transistor w ithout Base Connection LED - & — •7 * b ■ h ^ 2 it in nn hi 2 IÜ S & // // r"-| r"-| Sj j U J L3J L±J «: s # tt £ FC FCD890 * € 2 x m » 1 * ill £ If Vr P d \ Vcb IOL P d2 max max max max max max BY

dilmon

Contextual Info: GEC P L E S S E Y S i S I M I < <> \ I < l 1 l> H ADVANCE INFORMATION S DS 3305-2.0 SL2364 VERY HIGH PERFORMANCE TRANSISTOR ARRAYS The SL2364 is an array of transistors internally connected to form a dual long-tailed pair with tail transistors. This is a

PF212D

Abstract: fcd880 transistor BJ 017 PF322D LITRONIX PF222D FCD885 FCD890 ILD74 MCT66
Contextual Info: - 236- - 252- Dual LED -D arlington Transistor w ithout Base Connection LED - & — •7 * b ■ h ^ 2 it in nn hi 2 IÜ S & // // r"-| r"-| Sj j U J L3J L±J «: s # tt £ FC FCD890 * € 2 x m » 1 * ill £ If Vr P d \ Vcb IOL P d2 max max max max max max BY

KTC2026

Abstract: transistor ktA1046 KTA1046
Contextual Info: SEMICONDUCTOR KTA1046 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR INDUSTRIAL USE. GENERAL PURPOSE APPLICATION. FEATURES • Low Collector Saturation Voltage : VCE sat =-1.0V(Max.) at IC=-2A, IB=-0.2A. • Complementary to KTC2026. MAXIMUM RATINGS (Ta=25°C)

oc73

Contextual Info: SEM ICONDUCTOR KTK5131V TECHNI CAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES • 2.5 Gate Drive. • Low Threshold Voltage : Vth=0.5 ~ 1.5V. DIM • High Speed. -I— • Small Package.

VN2406M

Abstract: VN2406L
Contextual Info: VN2406 SERIES N-Channel Enhancement-Mode MOS Transistors V BR DSS o (V) r DS(ON) (n ) (A) PACKAGE VN2406D 240 6 1.12 TO-220 VN2406L 240 6 0.22 TO-92 VN2406M 240 6 0.25 TO-237 Performance Curves: VNDB24 TO-237 FRONT VIEW TO-220 PRODUCT SUMMARY PART NUMBER

MFE2005

Abstract: MFE2004 P6032 MFE2006
Contextual Info: MFE2004 silicon MFE2005 MFE2006 Silicon N-channel depletion mode (Type A) junction field-effect transistors designed for chopper applications. MAXIMUM RATINGS Rating Symbol Value Unit v DS 30 30 30 10 Vdc Vdc Vdc mAdc Drain-Source Voltage Drain-Gate Voltage

Contextual Info: Power Transistors 2SD1891 2SD1891 Silicon N P N Tripie-D iffused P lanar Darlington Type Package D im ensions Pow er A m plifier C om plem entary Pair w ith 2SB1251 • Features • Optimum for 3 0 W hi-fi output • High DC c u rre n t gain Iif e : 5000~30000

Contextual Info: TOSHIBA {D I SC RE TE/OPTO} DEjj ^ 9097250 TOSHIBA DISCRETE/OPTO D SEMICONDUCTOR motor 99D 16989 □□ l b W D Toshiba field effect transistor array S 2 4 8 7 TECHNICAL DATA high -linYdbU power drive switching l iT c oInV n n n e l m os T E N sTiA E cUh ag-MOS)

P2TA42

Abstract: p2t* smd smd transistors 458
Contextual Info: PZTA42 PZTA43 FOR MORE DETAILED INFORMATION SEE LATEST ISSUE OF HANDBOOK SC04 OR DATA SHEET SILICON EPITAXIAL TRANSISTORS NPN transistors in a microm iniature SMD package SOT-223 . They are prim arily intended fo r use in telephony and professional com munication equipment.

transistor BF 245

Abstract: bf 245 BF245 transistor BF245 transistor BF 245 c transistor BF245 A BF245 canal n BF245 TRANSISTOR BF 245 C transistor Bf-245
Contextual Info: BF245 FIELD EFFECT TRANSISTOR, SILICON, N CHANNEL TRANSISTOR A EFFE T DE CHAMP, SILICIUM , CANAL N - LF and HF amplification Vos 30 V max IDSS 2 . 25 mA .Vg s = 0 in 3 groups Amplification BF et H F en 3 groupes 1,1 pF typ. C12S Plastic case F 139 B — See outline drawing CB-76 on last pages

4302

Abstract: 4304 transistor ESM 30 transistor ESM ESM4302 ESM4303 ESM4304 esm 4303 a 4304
Contextual Info: ESM4302 ESM4303 ESM4304 FIELD EFFECT TRANSISTORS, SILICON, N CHANNEL TRANSISTORS A EFFE T DE CHAMP, SILICIUM, CANAL N LF amplification A m plification BF ro M -< IDSS Plastic case M a x im u m p o w e r d is s ip a tio n Dissipation de puissance maximale 0,5 - 5 mA

1SS TRANSISTOR

Contextual Info: SILICON N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR HN3G01J U n it in mm HIGH FR EQUENCY A M P LIF IE R A PP LIC A T IO N S . AM H IG H FREQUENCY A M P LIF IE R A PP LIC A TIO N S. A U D IO FREQUENCY A M P LIFIER APP LIC A TIO N S. M A X IM U M R ATINGS Ta = 25°C

Contextual Info: M an A M P com pany Radar Pulsed Power Transistor, 30W, 100|is Pulse, 10% Duty 3.1-3.5 GHz PH3135-30M V2.00 Features • • • • • • • • NPN Silicon M icrow ave Pow er T ran sisto r C om m on Base C on fig u ratio n B ro a d b an d Class C O p e ratio n

DDS-60

Abstract: NCQ1004 RL 50B
Contextual Info: NCQ1004 N CHANNEL ENHANCEMENT-MODE MOS TRANSISTOR ARRAY Su r fa c e M o u n t Q u a d • • • • 20 PIN LCC CERAMIC PACKAGE FAST SWITCHING LOW Rds ON ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) LIMITS 60 ±20 0.46 0.26 ±2 TBD TBD TBD

BF960

Abstract: transistor BF960 MARKING 4FL
Contextual Info: BF960 J V _ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected, intended fo r use in u.h.f. applications in television tuners and professional communication equipment.

1SS SOT-23

Abstract: SOT-23 d3v
Contextual Info: S EM IC O N D U C T O R KTK5131S TECHNI CAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR U LTR A -H IG H SPEED SW ITC H IN G A PPLIC A T IO N S A N A L O G SW ITCH A PPL IC A T IO N S FEA TU R ES • 2.5 G ate Drive. • Low T hreshold V oltage : V th=0.5 ~ 1.5V.

Contextual Info: N AUER PHILIPS/DISCRETE bRE D • bbS3R31 002fl37b 724 « A P X Philips specification Silicon diffused power transistor BU2520D GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic