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    1SMB3EZ51 Search Results

    1SMB3EZ51 Datasheets (5)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    1SMB3EZ51
    PanJit Semiconductors SURFACE MOUNT SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts) Original PDF 129.88KB 5
    1SMB3EZ51
    Transys Electronics SURFACE MOUNT SILICON ZENER DIODE Scan PDF 379.99KB 5
    1SMB3EZ51-AU_R1_000A1
    Panjit International GLASS PASSIVATED JUNCTION SILICO Original PDF 193.19KB 6
    badge 1SMB3EZ51
    SUNMATE electronic Co., LTD Surface mount silicon Zener diode in SMB/DO-214AA package with 3.0W power dissipation, voltage range 3.9V to 400V, low leakage current, high reliability, and maximum forward voltage of 1.5V at 200mA. Original PDF
    badge 1SMB3EZ5.1
    SUNMATE electronic Co., LTD Surface mount silicon Zener diode in SMB/DO-214AA package with 3.0W power dissipation, voltage range 3.9V to 400V, low leakage current, high reliability, and maximum forward voltage of 1.5V at 200mA.Surface mount silicon zener diode in SMB package, 3.0W power dissipation, 3.9V to 400V voltage range, low leakage current, high reliability, junction temperature from -55 to +175°C, reverse leakage current up to 80µA.Surface mount silicon zener diode in SMB package with 3.0W power dissipation, voltage range from 3.9V to 400V, low leakage current, high reliability, and maximum forward voltage of 1.5V at 200mA.Surface mount silicon Zener diode in SMB/DO-214AA package, 3.0W power dissipation, 3.9V to 400V voltage range, low leakage current, high reliability, maximum forward voltage 1.5V, junction temperature range -55 to +175°C. Original PDF
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    1SMB3EZ51 Price and Stock

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    PanJit Group 1SMB3EZ51_R1_00001

    DIODE ZENER 51V 3W DO214AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () 1SMB3EZ51_R1_00001 Cut Tape 765 1
    • 1 $0.65
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    • 100 $0.26
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    1SMB3EZ51_R1_00001 Digi-Reel 1
    • 1 $0.49
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    1SMB3EZ51_R1_00001 Tape & Reel 800
    • 1 -
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    • 1000 $0.18
    • 10000 $0.13
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    PanJit Group 1SMB3EZ51-AU_R1_000A1

    DIODE ZENER 51V 3W DO214AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1SMB3EZ51-AU_R1_000A1 Tape & Reel 500,000
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    PanJit Semiconductor 1SMB3EZ51_R1_00001

    Zener Diodes 3000mW,ZENER,SMB,51V
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    Mouser Electronics 1SMB3EZ51_R1_00001
    • 1 $0.65
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    TME 1SMB3EZ51_R1_00001 1
    • 1 $0.76
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    PanJit Semiconductor 1SMB3EZ51_R2_00001

    Zener Diodes 3000mW ZENER 51V
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    Mouser Electronics 1SMB3EZ51_R2_00001
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    PanJit Semiconductor 1SMB3EZ51-AU_R1_000A1

    Zener Diodes 3000mW,ZENER,SMB,51V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 1SMB3EZ51-AU_R1_000A1
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    TME 1SMB3EZ51-AU_R1_000A1 1
    • 1 $0.76
    • 10 $0.39
    • 100 $0.26
    • 1000 $0.21
    • 10000 $0.18
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    1SMB3EZ51 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1SMB3EZ10

    Abstract: 1SMB3EZ11 1SMB3EZ12 1SMB3EZ13 1SMB3EZ51 ZENER DIODE 5.1B e1a481 E1A-481
    Contextual Info: 1SMB3EZ6.8~1SMB3EZ51 GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 6.8 to 51 Volts POWER 3.0 Watts FEATURES • Low profile package • Built-in strain relief • Glass passivated iunction • Low inductance • Typical ID less than 1.0µA above 11V


    Original
    1SMB3EZ51 2002/95/EC DO-214AA, MIL-STD-750, E1A-481) 1SMB3EZ10 1SMB3EZ11 1SMB3EZ12 1SMB3EZ13 1SMB3EZ51 ZENER DIODE 5.1B e1a481 E1A-481 PDF

    Contextual Info: 1SMB3EZ4.7-AU SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts FEATURES 0.155 3.94 0.130(3.30) • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated junction • Low inductance


    Original
    TS16949 AECQ101 2002/95/EC DO-214AA, 2012-REV PDF

    Contextual Info: 1SMB3EZ4.7-AU SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts FEATURES 0.155 3.94 0.130(3.30) • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated junction • Low inductance


    Original
    TS16949 AEC-Q101 2011/65/EU IEC61249 2012-REV PDF

    Contextual Info: 1SMB3EZ4.7 SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts 0.155 3.94 • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated junction • Low inductance • Plastic package has Underwriters Laboratory Flammability


    Original
    DO-214AA, MIL-STD-750, 2002/95/EC 2012-REV PDF

    marking 43b

    Abstract: E1A-481
    Contextual Info: 1SMB3EZ4.7 SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts 0.155 3.94 • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated iunction • Low inductance • Plastic package has Underwriters Laboratory Flammability


    Original
    2002/95/EC DO-214AA, MIL-STD-750, 2012-REV marking 43b E1A-481 PDF

    zener 3.082

    Abstract: 1SMB3EZ13 1SMB3EZ10 1SMB3EZ100 1SMB3EZ11 1SMB3EZ12 1SMB3EZ51 3051 zener diode 47-10 Thermal Resistance to ambient SMB Case diode IR SMB
    Contextual Info: 1SMB3EZ6.8~1SMB3EZ100 SILICON ZENER DIODES VOLTAGE 6.8 to 100 Volts POWER 3.0 Watts SMB/DO-214AA Unit: inch mm FEATURES • Low profile package .155(3.94) .130(3.30) • Built-in strain relief • Plastic package has Underwriters Laboratory Flammability


    Original
    1SMB3EZ100 SMB/DO-214AA DO-214AA, MIL-STD-750, zener 3.082 1SMB3EZ13 1SMB3EZ10 1SMB3EZ100 1SMB3EZ11 1SMB3EZ12 1SMB3EZ51 3051 zener diode 47-10 Thermal Resistance to ambient SMB Case diode IR SMB PDF

    1SMB3EZ11

    Abstract: 1SMB3EZ12 1SMB3EZ13 1SMB3EZ14 1SMB3EZ15 1SMB3EZ200
    Contextual Info: 1SMB3EZ11 THRU 1SMB3EZ200 SURFACE MOUNT SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts FEATURES l For surface mounted applications in order to optimize board space l Low profile package l Built-in strain relief l l Glass passivated junction


    Original
    1SMB3EZ11 1SMB3EZ200 DO-214AA DO-214AA, MIL-STD-750, 1SMB3EZ12 1SMB3EZ13 1SMB3EZ14 1SMB3EZ15 1SMB3EZ200 PDF

    TSP160C

    Abstract: ER1602CT 727 thyristor uf1002ct PANJIT ER306 1N4004 SOD-123 272 zk thyristor mw 137 600g pg2010 D804C
    Contextual Info: TABLE OF CONTENT THYRISTOR SURGE PROTECTION DEVICE • 50Amp 10/1000 µs Thyristor Surge Protection Device . Page 02 • 80Amp 10/1000 µs Thyristor Surge Protection Device . Page 04


    Original
    50Amp 80Amp 100Amp 375x360x390/390x240x420 375x360x390 O-252 TSP160C ER1602CT 727 thyristor uf1002ct PANJIT ER306 1N4004 SOD-123 272 zk thyristor mw 137 600g pg2010 D804C PDF

    E1A-481

    Contextual Info: 1SMB3EZ5.6 SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 5.6 to 51 Volts POWER 3.0 Watts 0.155 3.94 • Low profile package • Glass passivated iunction • Low inductance • Plastic package has Underwriters Laboratory Flammability Classification 94V-O


    Original
    2002/95/EC DO-214AA, MIL-STD-750, 2011-REV E1A-481 PDF

    Contextual Info: 1SMB3EZ4.7-AU SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts FEATURES 0.155 3.94 0.130(3.30) • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated junction • Low inductance


    Original
    TS16949 AEC-Q101 2002/95/EC 2012-REV PDF

    zener 4.7v

    Abstract: E1A-481
    Contextual Info: 1SMB3EZ4.7 SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts 0.155 3.94 • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated junction • Low inductance • Plastic package has Underwriters Laboratory Flammability


    Original
    2002/95/EC DO-214AA, MIL-STD-750, 2012-REV zener 4.7v E1A-481 PDF

    8v2b

    Contextual Info: 1SMB3EZ4.7 SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts 0.155 3.94 • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated junction • Low inductance • Plastic package has Underwriters Laboratory Flammability


    Original
    2002/95/EC DO-214AA, MIL-STD-750, 2012-REV 8v2b PDF

    GV 475 diode

    Abstract: 1SMB3EZ11 1SMB3EZ12 1SMB3EZ13 1SMB3EZ14 1SMB3EZ200 zener Diode 19B H 48 zener diode
    Contextual Info: TRANSYS ELECTRONICS LIMITED 1SMB3EZ11 THRU 1SMB3EZ200 SURFACE MOUNT SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 3.0 W atts FEATURES For surface mounted app cations in order to DO-214AA optimize board space MODIFIED J-BEND Low prof e package Built-in strain re ef


    OCR Scan
    1SMB3EZ11 1SMB3EZ200 0J/10 DO-214AA, MIL-STD-750, GV 475 diode 1SMB3EZ12 1SMB3EZ13 1SMB3EZ14 1SMB3EZ200 zener Diode 19B H 48 zener diode PDF

    1SMB3EZ6.2

    Abstract: ZK marking E1A-481
    Contextual Info: 1SMB3EZ5.6 SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 5.6 to 51 Volts POWER 3.0 Watts 0.155 3.94 • Low profile package • Glass passivated iunction • Low inductance • Plastic package has Underwriters Laboratory Flammability Classification 94V-O


    Original
    2002/95/EC DO-214AA, MIL-STD-750, 2011-REV 1SMB3EZ6.2 ZK marking E1A-481 PDF