1SMB3EZ6.2 Search Results
1SMB3EZ6.2 Datasheets (4)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 1SMB3EZ62 | PanJit Semiconductors | SURFACE MOUNT SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts) | Original | 129.88KB | 5 | ||
| 1SMB3EZ62 | Transys Electronics | SURFACE MOUNT SILICON ZENER DIODE | Scan | 379.99KB | 5 | ||
| 1SMB3EZ6.2-AU_R1_000A1 | Panjit International | GLASS PASSIVATED JUNCTION SILICO | Original | 193.19KB | 6 | ||
1SMB3EZ62
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SUNMATE electronic Co., LTD | Surface mount silicon Zener diode in SMB/DO-214AA package with 3.0W power dissipation, voltage range 3.9V to 400V, low leakage current, high reliability, and maximum forward voltage of 1.5V at 200mA.Surface mount silicon zener diode in SMB package, 3.0W power dissipation, 3.9V to 400V voltage range, low leakage current, high reliability, junction temperature from -55 to +175°C, reverse leakage current up to 80µA.Surface mount silicon zener diode in SMB package with 3.0W power dissipation, voltage range from 3.9V to 400V, low leakage current, high reliability, and maximum forward voltage of 1.5V at 200mA.Surface mount silicon Zener diode in SMB/DO-214AA package, 3.0W power dissipation, 3.9V to 400V voltage range, low leakage current, high reliability, maximum forward voltage 1.5V, junction temperature range -55 to +175°C.Surface mount silicon Zener diodes in SMB package with 3.0W power dissipation, voltage range from 3.9V to 400V, low leakage current, high reliability, and maximum forward voltage of 1.5V at 200mA.Surface mount silicon Zener diode in SMB package, 3.0W power dissipation, 3.9V to 400V voltage range, low leakage current, high reliability, junction temperature from -55 to +175°C, reverse leakage current as low as 0.5µA. | Original |
1SMB3EZ6.2 Price and Stock
PanJit Group 1SMB3EZ6.2_R1_00001DIODE ZENER 6.2V 3W DO214AA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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1SMB3EZ6.2_R1_00001 | Tape & Reel | 800 | 800 |
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PanJit Group 1SMB3EZ6.2-AU_R1_000A1DIODE ZENER 6.2V 3W DO214AA |
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1SMB3EZ6.2-AU_R1_000A1 | Tape & Reel | 500,000 |
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PanJit Semiconductor 1SMB3EZ6.2_R1_00001Zener Diodes 3000mW,ZENER,SMB,6.2V |
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1SMB3EZ6.2_R1_00001 |
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1SMB3EZ6.2_R1_00001 | 1 |
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PanJit Semiconductor 1SMB3EZ6.2_R2_00001Zener Diodes 3000mW ZENER 6.2V |
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1SMB3EZ6.2_R2_00001 |
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1SMB3EZ6.2_R2_00001 | 18 Weeks | 3,000 |
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PanJit Semiconductor 1SMB3EZ6.2-AU_R1_000A1Zener Diodes 3000mW,ZENER,SMB,6.2V |
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1SMB3EZ6.2-AU_R1_000A1 |
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1SMB3EZ6.2 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: 1SMB3EZ4.7-AU SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts FEATURES 0.155 3.94 0.130(3.30) • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated junction • Low inductance |
Original |
TS16949 AECQ101 2002/95/EC DO-214AA, 2012-REV | |
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Contextual Info: 1SMB3EZ4.7-AU SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts FEATURES 0.155 3.94 0.130(3.30) • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated junction • Low inductance |
Original |
TS16949 AEC-Q101 2011/65/EU IEC61249 2012-REV | |
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Contextual Info: 1SMB3EZ4.7 SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts 0.155 3.94 • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated junction • Low inductance • Plastic package has Underwriters Laboratory Flammability |
Original |
DO-214AA, MIL-STD-750, 2002/95/EC 2012-REV | |
marking 43b
Abstract: E1A-481
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Original |
2002/95/EC DO-214AA, MIL-STD-750, 2012-REV marking 43b E1A-481 | |
E1A-481Contextual Info: 1SMB3EZ5.6 SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 5.6 to 51 Volts POWER 3.0 Watts 0.155 3.94 • Low profile package • Glass passivated iunction • Low inductance • Plastic package has Underwriters Laboratory Flammability Classification 94V-O |
Original |
2002/95/EC DO-214AA, MIL-STD-750, 2011-REV E1A-481 | |
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Contextual Info: 1SMB3EZ4.7-AU SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts FEATURES 0.155 3.94 0.130(3.30) • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated junction • Low inductance |
Original |
TS16949 AEC-Q101 2002/95/EC 2012-REV | |
zener 4.7v
Abstract: E1A-481
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Original |
2002/95/EC DO-214AA, MIL-STD-750, 2012-REV zener 4.7v E1A-481 | |
8v2bContextual Info: 1SMB3EZ4.7 SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts 0.155 3.94 • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated junction • Low inductance • Plastic package has Underwriters Laboratory Flammability |
Original |
2002/95/EC DO-214AA, MIL-STD-750, 2012-REV 8v2b | |
1SMB3EZ6.2
Abstract: ZK marking E1A-481
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Original |
2002/95/EC DO-214AA, MIL-STD-750, 2011-REV 1SMB3EZ6.2 ZK marking E1A-481 |