1P SOT Search Results

FFB2222A

Abstract: FMB2222A MMPQ2222A SC70-6 SOIC-16 C150F
Contextual Info: FMB2222A FFB2222A E2 MMPQ2222A C2 B2 E1 C1 C1 E1 C2 B1 B2 E3 E4 B4 B2 B1 pin #1 E2 B3 E2 E1 pin #1 B1 SC70-6 SuperSOT-6 Mark: .1P Mark: .1P C1 SOIC-16 C2 C1 C3 C2 C4 C4 C3 NPN Multi-Chip General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector

MARKING 1P

Abstract: MMBT2222A MMBT2907A 1p sot23 TRANSISTOR 1P SOT23
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222ALT1 TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907ALT1) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P

Transistor hFE CLASSIFICATION Marking CE

Abstract: marking 1P sot-23 Application of MMBT2907A sot-23 1P F MMBT2222A MMBT2907A MARKING 1P
Contextual Info: MMBT2222A TRANSISTOR NPN PRODUCT SUMMARY SOT-23 Plastic-Encapsulate Transistors SOT-23 FEATURES Epitaxial planar die construction Complementary PNP Type available (MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P MECHANCIAL DATA NA Pb-free; RoHS-compliant

kst2222a

Contextual Info: KST2222A tm NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1P 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 75 V VCEO Collector-Emitter Voltage

BAV99

Abstract: BAW56 Fairchild BAW56 SOT-23 bav99 code
Contextual Info: BAW56 BAW56 CONNECTION DIAGRAMS 3 3 3 A1 2 SOT-23 1 2 1 2 1 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage

Contextual Info: S iM IC3QMPUCTQ R BAW56 CONNECTION DIAGRAMS SOT-23 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings4 Symbol T A = 2 5°C unless o th e rw ise noted Parameter Value Units W IV Working Inverse Voltage

KST2222A

Abstract: transistor kst2222a
Contextual Info: KST2222A tm NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1P 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 75 V VCEO Collector-Emitter Voltage

fairchild sot-23 bav70

Abstract: sot-23 body marking A4 MARKING W2 SOT23 BAV70 ON marking code w2 sot23 fairchild s sot-23 Device Marking BAV70 BAV74 BAV99 sot-23 MARKING CODE A4
Contextual Info: BAV70 / BAV74 BAV70 / 74 3 CONNECTION DIAGRAMS A4 3 1 2 SOT-23 3 1 BAV70 2 MARKING A4 BAV74 1 JA 2 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

BD1201

Contextual Info: BE :?VlICON D U C 'TP R MMBD7000 CONNECTION DIAGRAM SOT-23 High Conductance Ultra Fast Diode Sourced from Process 1P. See M M BD1201-1205 for characteristics. Absolute Maximum Ratings4 Symbol T A = 2 5°C unless o th e rw ise noted Parameter Value Units W IV

BAV99

Abstract: 1N4150 MMBD1201
Contextual Info: BAV99 CONNECTION DIAGRAM 3 3 3 A7 2 1 SOT-23 2 1 2 1 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage 70 V IO Average Rectified Current

BAV99

Abstract: ua725
Contextual Info: BAV99 BAV99 CONNECTION DIAGRAM 3 3 3 A7 2 SOT-23 1 2 1 1 2 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage 70 V IF AV Average Rectified Current

TF411

Abstract: t2222 PN2222A le TF-411
Contextual Info: ggM C O N O U C TO R PN2222A MMBT2222A PZT2222A SOT-23 SOT-223 Mark: 1P NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Pro­ cess 19. Absolute Maximum RâtinÇjS

transistor 2222a to-92

Abstract: 2222A fairchild transistor pn 2222a transistor C 6092 transistor 2222a NPN2222A PN2222A NPN SMALL SIGNAL PSPICE
Contextual Info: MMBT2222A PZT2222A C C E E C B C TO-92 B B SOT-23 E SOT-223 Mark: 1P NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. Absolute Maximum Ratings* Symbol

1N4150

Abstract: BAS16 BAV99 MMBD1201 A6 SOT-23
Contextual Info: BAS16 BAS16 CONNECTION DIAGRAM 3 3 3 A6 2 SOT-23 1 2 2 NC 1 1 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units 75 V W IV Working Inverse Voltage

Contextual Info: S i M IC3QM P U C T Q R BAV99 CONNECTION DIAGRAM SOT-23 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Màximum RâtinÇjS Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage 70 V lo Average Rectified Current

Contextual Info: Broadband IF Driver Amplifier, 50 - 450 MHz Preliminary MAAMSS0017 V 1P.00 Features SOT-89 Plastic Package n Low Cost Plastic SOT-89 Package n Broadband Operation n Output Intercept Point of +40 dBm n Output P1 dB of +22 dbm n High Efficiency n 50 Ohm Input/Output Match

marking code ce SOT23

Abstract: MOSFET MARKING 3F marking code 3a sot23 CE MARKING CODE
Contextual Info: Surface M ount Transistors NPN Transistors/SOT23 Type Num ber hpE @ VCE/IC M arking Code* Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 1D MMBT2222A IMBT/MMBT3904 MMBT4401 V ceo V CE SAT @ Ic /lß fT @ V ce/I c Cqb @ VCB V/m A max.V m A/m A

transistor 1201 1203 1205

Abstract: MMBD1201 MMBD1203 MMBD1204A MMBD1205A wA MARKING SOT-23 SERIES DIODE marking P2 sot-23 fairchild s sot-23 Device Marking
Contextual Info: CONNECTION DIAGRAMS 3 3 1201 3 1203 24 3 2 NC 1 1 2 SOT-23 2 MARKING MMBD1201 24 MMBD1204A 27 MMBD1203 26 MMBD1205A 28 1 1 2 3 3 1204 1 2 1 1205 2 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

SOT-23 EBC

Abstract: MMBT2222A PN2222A PZT2222A IC 7403 mark PD sot 23 PN222
Contextual Info: MMBT2222A PN2222A PZT2222A C C E E TO-92 SOT-23 Mark:1P EBC C SOT-223 B B NPN General Purpose Amplifier • This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from process 19. Absolute Maximum Ratings * Ta=25°C unless otherwise noted

2222A fairchild

Abstract: 22222a 2222a sot223 PN2222ABU SOT-23 EBC 2222A to-92 npn PN2222ANLbu
Contextual Info: MMBT2222A PN2222A PZT2222A C C E E TO-92 SOT-23 Mark:1P EBC C SOT-223 B B NPN General Purpose Amplifier • This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from process 19. Absolute Maximum Ratings * Ta=25°C unless otherwise noted