1N914B DIODE Search Results

IN914B

Abstract: IN914B diode 1N4148 1N914b diode 1N4148 ROHM 1n4148 trr JEDEC 1N4148 1N4150 1N4448 1N914B
Contextual Info: 1N4148 / 1N4150 / 1N4448 / 1N914B Diodes Switching diode 1N4148 / 1N4150 / 1N4448 / 1N914B ∗This product is available only outside of Japan. !External dimensions Units : mm !Applications High-speed switching !Features 1) Glass sealed envelope. (GSD) 2) High speed.

1N914B

Contextual Info: RECTRON SEMICONDUCTOR 1N914B TECHNICAL SPECIFICATION 1N914B SIGNAL DIODE Absolute Maximum Ratings Ta=25°C Items Symbol Ratings Unit Reverse Voltage VR 75 V Reverse Recovery trr 4 ns Time Power Dissipation P 500 mW 3.33mW/°C (25°C) Forward Current IF 300

1N914

Abstract: 1N914A 1N914B MAM246
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N914; 1N914A; 1N914B High-speed diodes Product specification Supersedes data of 1999 May 26 2003 Jun 06 Philips Semiconductors Product specification High-speed diodes 1N914; 1N914A; 1N914B FEATURES DESCRIPTION • Hermetically sealed leaded glass

1N914B

Contextual Info: RECTRON SEMICONDUCTOR 1N914B TECHNICAL SPECIFICATION 1N914B SIGNAL DIODE Absolute Maximum Ratings Ta=25°C Items Symbol Ratings Unit Reverse Voltage VR 75 V Reverse Recovery trr 4 ns Time Power Dissipation P 500 mW 3.33mW/°C (25°C) Forward Current IF 300

1N4148 telefunken

Contextual Info: 1N4148.1N4448 Vishay Telefunken Fast Switching Diodes Features D Silicon Epitaxial Planar Diodes D Electrically equivalent diodes: 1N4148 – 1N914 1N4448 – 1N914B Applications 94 9367 Extreme fast switches Order Instruction Type Type Differentiation 1N4148

Contextual Info: 1N4148.1N4448 Vishay Telefunken Fast Switching Diodes Features D Silicon Epitaxial Planar Diodes D Electrically equivalent diodes: 1N4148 – 1N914 1N4448 – 1N914B Applications 94 9367 Extreme fast switches Order Instruction Type Type Differentiation 1N4148

1N4148.1N4448

Abstract: 1N4148 telefunken Diode Equivalent 1n4148 L45C
Contextual Info: Tem ic 1N4148.1N4448 Semiconductors Silicon Epitaxial Planar Diodes Features • Electrically equivalent diodes 1N4148- 1N914 1N4448 - 1N914B Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25 °C Parameter Repetitive peak reverse voltage

1N4148.1N4448

Abstract: din 4148 1N4148 1N4448 1N914 1N914B
Contextual Info: 1N4148.1N4448 Silicon Epitaxial Planar Diodes Features D Electrically equivalent diodes: 1N4148 – 1N914 1N4448 – 1N914B Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage

PNP Transistor 2N2222 equivalent

Abstract: DIODE 1N3605 2N2907 equivalent equivalent transistor 2N2222 2n2222 npn transistor general purpose 1N3605 equivalent 2N2222 npn small signal current gain 2N2222 chip DIODE 1N9148 transistor npn high speed switching
Contextual Info: SPECIAL SILICON PRODUCTS SILICON SIGNAL DIODE CHIPS Equivalent JEDEC Number GE Type 1N914 CHIP DRAWINGS Description Chip Dwg. 35.88 Designed for high-speed switching and general purpose applications. 1N914A Specification Sheet No. 1 35.90 1N914B M46P-X510

1N414 diode

Abstract: 1N414 1N4148.1N4448 J 1N4448 equivalent
Contextual Info: 1N4148.1N4448 VISHAY _ ▼ Vishay Telefunken Silicon Epitaxial Planar Diodes Features • Electrically equivalent diodes: 1N414 8 - 1 N914 1 N 44 48- 1N914B Applications Extreme fast switches Absolute Maximum Ratings T¡ = 25°C Parameter

1N4148.1N4448

Abstract: 1N4148.TR
Contextual Info: 1N4148.1N4448 VISHAY Vishay Semiconductors Small Signal Fast Switching Diodes Features • Silicon Epitaxial Planar Diodes • Electrically equivalent diodes: 1N4148 - 1N914 1N4448 - 1N914B Applications Extreme fast switches 94 9367 Mechanical Data Case: DO-35 Glass Case

1N4148 equivalent

Abstract: 1N4148.1N4448 1N914 1N914B 1N4148 1N4448 diode din 4148 din 4148
Contextual Info: 1N4148.1N4448 TELEFUNKEN Semiconductors Silicon Epitaxial Planar Diodes Features D Electrically equivalent diodes: 1N4148 – 1N914 1N4448 – 1N914B Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Repetitive peak reverse voltage

Contextual Info: Diodes High–speed switching diode 1N4148 / 1N4150 / 1N4448 / 1N914B ✻This product is available only outside of Japan. FJEDEC Standard Product The following 1N series diodes are available to support the JEDEC standard. FExternal dimensions Units: mm FAbsolute maximum ratings (Ta = 25°C)

1N4148 package SO

Abstract: free 1N4148 1N4148.TR 1N4148
Contextual Info: 1N4148 / 1N4448 Vishay Semiconductors Small Signal Fast Switching Diodes Features • Silicon Epitaxial Planar Diodes • Electrically equivalent diodes: 1N4148 e2 1N914 1N4448 - 1N914B • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC

Contextual Info: 1N4148/1N4448/1N914B 500mW High Speed Switching Diode Small Signal Diode DO-35 Axial Lead HERMETICALLY SEALED GLASS Features D C —Fast switching device Trr<4.0nS —Through-hole device type mounting A —Moisture sensitivity level 1 —Solder hot dip Tin(Sn) lead finish

1N4148 Fast Switching Diode

Abstract: free 1N4148 1N4148 DO35 1n4148 w1 f12 diode
Contextual Info: 1N4148/1N4448/1N914B 500mW High Speed Switching Diode Small Signal Diode DO-35 Axial Lead HERMETICALLY SEALED GLASS Features D C —Fast switching device Trr<4.0nS —Through-hole device type mounting A —Moisture sensitivity level 1 —Solder hot dip Tin(Sn) lead finish

1n4148

Contextual Info: 1N4148/1N4448/1N914B Taiwan Semiconductor Small Signal Product 500mW High Speed Switching Diode FEATURES - Fast switching device Trr<4.0nS - Through-hole device type mounting - Moisture sensitivity level 1 - Solder hot dip Tin(Sn) lead finish - Pb free version and RoHS compliant

DO-35 PACKAGE

Abstract: DSAIH000251
Contextual Info: B K C INTERNATIONAL 3 Silicon Switching !Diodes for Computer Applications in DO-35 Package I Type BAW75 BAW76 BKC600 BKC666 BKC900 BKC999 1N625 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N3064 1N3600 1N4009 1N4148 1N4149 1N4150 1N4151 1N4152 1N4153 1N41S4 1N4446

Contextual Info: N AUER PHILIPS/DISCRETE 5SE D U bbSBIBl OOlbiafi 3 • T ' O ^ - O 0! Small Signal Devices SWITCHING DIODES PRO TYPE 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N4148 1N4149 1N4150 1N4151 1N4153 1N 4446 1N 4448 1N 4449 1N4531 1N 4532 BAS11 BAV10 BAV18 BAV19 BAV20

1N4148

Abstract: diode 1N4148 1N4148 diode JEDEC 1N4148 Diode Equivalent 1n4148 1N4150 1N4148 diode download datasheet 1n4448 1N914B JAPAN transistor
Contextual Info: Diodes High–speed switching diode 1N4148 / 1N4150 / 1N4448 / 1N914B ✻This product is available only outside of Japan. FJEDEC Standard Product The following 1N series diodes are available to support the JEDEC standard. FExternal dimensions Units: mm FAbsolute maximum ratings (Ta = 25°C)

1nxxxx diode

Abstract: 1N4148 SIGNAL DIODE 1n4448 diode 1N4148.1N4448 SOD-27 1N4148 1N4448 1N914B 1N4148 diode SOD 80 1NXXXX
Contextual Info: 1N4148/1N4448/1N914B 500mW High Speed Switching Diode Small Signal Diode DO-35 Axial Lead HERMETICALLY SEALED GLASS D Features C —Fast switching device Trr<4.0nS —Through-hole device type mounting A —Moisture sensitivity level 1 —Solder hot dip Tin(Sn) lead finish

1N914

Abstract: 1N914B DIODE 1N914a Marking d12
Contextual Info: 1N914 / 1N914A / 1N914B FAST SWITCHING DIODE POWER SEMICONDUCTOR Features • • • • Fast Switching Speed High Reliability High Conductance For General Purpose Switching Applications B A A C D Mechanical Data • • • • DO-35 Case: DO-35, Glass Terminals: Solderable per MIL-STD-202,

Contextual Info: Diodes I High-Speed Switching Diode 1 1N4148/1N4150/1N4448/1N914B •E x te rn a l dimensions Units: mm • J E D E C Standard Product At ROHM, we manufacture the following 1N series, as a JEDEC standard product, to assure that we meet the needs of our overseas customers as well.

MIL-S-19500C

Abstract: IN4444 MIL-S-19500 1N4532 D035 in4445 1N4148 1N4149 IN4305 1N4152
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Part Number 1N914 1N914A 1N914B BV @ 100/1A M in. V I r @ 25°C Max. (ri A) @ V r (V) V f Max. (V) @ I f (m A) Co @ DV (pf) trr (77SEC) Package Outline Package O utline Number 100 100 25 30 1.00 10 4 25 20 1.00 20 4 100