1N914 PH Search Results

1N914

Abstract: 1N914A 1N914B MAM246
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N914; 1N914A; 1N914B High-speed diodes Product specification Supersedes data of 1999 May 26 2003 Jun 06 Philips Semiconductors Product specification High-speed diodes 1N914; 1N914A; 1N914B FEATURES DESCRIPTION • Hermetically sealed leaded glass

1N914

Abstract: MAM246
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N914 High-speed diode Product specification Supersedes data of 1996 Sep 03 1999 May 26 Philips Semiconductors Product specification High-speed diode 1N914 FEATURES DESCRIPTION • Hermetically sealed leaded glass

1N914

Contextual Info: FEATURES 1N914 • • • • • 1N914 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/116 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current A, sine 8.3mS:

1n914 equivalent

Abstract: 1N914 JANTX IN914 1N914 D0-35
Contextual Info: • 1N914 AVAILABLE IN JAN, PER MIL-PRF-19500/116 JANTX, AND JANTXV 1N914 • SWITCHING DIODE • HERMETICALLY SEALED • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED MAXIMUM RATINGS 0.068/0.076 1.73/1.93 Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +200°C

IN914

Contextual Info: • 1N914 AVAILABLE IN JAN, JANTX, AND JANTXV 1N914 PER MIL-PRF-19500/116 • SWITCHING DIODE • HERMETICALLY SEALED • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +200°C

MIL-PRF-19500/116

Abstract: 1N914 D0-35 IN914
Contextual Info: • 1N914 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/116 1N914 • SWITCHING DIODE • HERMETICALLY SEALED • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED MAXIMUM RATINGS 0.068/0.076 1.73/1.93 Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +200°C

Contextual Info: 1N914 AVAILABLE IN JAN, JAN TX, AND JA N T X V 1N914 PER M1L-PRF-195D0/11G SWITCHING DIODE HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +200°C Operating Current: 75 mA @ T ^ = + 25°C

Contextual Info: P h ilip s S e m ico n d u cto rs P ro d u ct s p e cifica tio n High-speed diodes 1N914; 1N916 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 DO-35 package • High switching speed: max. 4 ns The 1N914; 1N916 are high-speed switching diodes fabricated in planar

Contextual Info: N AUER PHILIPS/DISCRETE 5SE D U bbSBIBl OOlbiafi 3 • T ' O ^ - O 0! Small Signal Devices SWITCHING DIODES PRO TYPE 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N4148 1N4149 1N4150 1N4151 1N4153 1N 4446 1N 4448 1N 4449 1N4531 1N 4532 BAS11 BAV10 BAV18 BAV19 BAV20

1N914 smd

Abstract: melf smd 1n914 1N4148 DL-35 1N4148 SMD sot23 PACKAGE 1N4148 DL-35 PACKAGE LL4148 SOd323 1N4148 SMD PACKAGE 1N4148 sod-323 BAS21 SOD323 ll4148 sod123
Contextual Info: SENSITRON SEMICONDUCTOR SMALL SIGNAL SWITCHING DIODES 1 Pd (mW) Package Device Family 200 250 300 350 410 1N4148WS 1N4448WS BAL99W BAS16W BAS16WS BAS19W – BAS21W BAS19WS – BAS21WS BAV70W BAV99W BAW56W MMBD4148W MMBD4448W MMDL6050 MMDL914 1N914 DL914

1N914

Abstract: 1N914A 1N914B
Contextual Info: 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818) 701-4939 1N914(A)(B) Features • • • Low Current Leakage Metalurgically Bonded Construction Low Cost 500mW 100 Volt Silicon Epitaxial Diode Maximum Ratings • • • DO-35 Operating Temperature: -65°C to +175°C

1N4150

Abstract: 1N914 CJ 4148 CJ 4148 1N914/1N4148 YC 746 1N4151 1n914a-1 1N4148 1N4154 1N4448
Contextual Info: 1N914 DC COMPONENTS CO., LTD. R THRU RECTIFIER SPECIALISTS 1N 4148 1N 4454 TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES VOLTAGE RANGE -50 to 100 Volts CURRENT - 0.075 to 0.2 Ampere FEATURES * * * * * Silicon epitaxial planar diodes Low power loss, high efficiency

Contextual Info: DIGITRON SEMICONDUCTORS 1N914,A,B-1N916,A,B SWITCHING RECTIFIERS MAXIMUM RATINGS Symbol Value Units Maximum repetitive reverse voltage Parameter VRRM 100 V Average rectified forward current IF AV 200 mA Non-repetitive peak forward surge current Pulse width = 1.0 second

SL415

Contextual Info: HIGH SPEED SWITCHING DIODES 250mW/500mW DO-35 CASE 28 SURGE PART NUMBER •■■■ Peak Reverse voltage VRM 1N914 :,:v -v 100 1N4148 1N4150 1N4151 1N4154 1N4448 1N4454 Forwan Voltage wmmm» % 75 75 75 75 50 50 25 75 50 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0

in4727

Abstract: 6RW51 pico amp meter 1N4532 1N4148 1N4149 1N4151 1N4152 1N914 1N914A
Contextual Info: SILICON S I G N A L DIODES 100 MA TYPES P a rt N u m b e r BV @ 100/1A M in . V I r @ 2 5 ° C M a x. (ri A ) @ V r (V) V f (V ) M a x. @ I f (m A ) Co @ DV (pf) 1N914 100 25 30 1.00 10 4 1N 914A 100 25 20 1.00 20 4 1N914B 100 25 20 1.00 100 1N916 100 25

1N914

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1N914 A (B)  )HDWXUHV • • • 0D[LPXP5DWLQJV • • • 500mW 100 Volt Silicon Epitaxial Diodes

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1N914 A (B)  )HDWXUHV • • • • • • Moisture Sensitivity Level 1 Low Current Leakage Compression Bond Construction

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1N914 A (B)  )HDWXUHV • • • • • • Moisture Sensitivity Level 1 Low Current Leakage Compression Bond Construction

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1N914 A (B)  )HDWXUHV • • • • 0D[LPXP5DWLQJV • • • 500mW 100 Volt Silicon Epitaxial Diodes

1n914

Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 1N914 A (B)  )HDWXUHV • • • 0D[LPXP5DWLQJV • • • 500mW 100 Volt Silicon Epitaxial Diodes Low Current Leakage Compression Bond Construction

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1N914 A (B)  )HDWXUHV • • • • • • Moisture Sensitivity Level 1 Low Current Leakage Compression Bond Construction

LEM LA 25 NP

Abstract: AN1606 use igbt for 3 phase induction motor TRANSISTOR R46 TRANSISTOR R48 2N3904-18 MOTOROLA d11 1 HP SINGLE PHASE induction motor MC33153 atop
Contextual Info: MOTOROLA Order this document by AN1606/D SEMICONDUCTOR APPLICATION NOTE AN1606 ITC132 High Voltage Micro to Motor Interface By Bill Lucas and Warren Schultz An IGBT power stage that is designed to run 3 phase AC Induction motors with input signals from an ASB124 Motion

NE5018

Abstract: AC 5018 th 2190 13VrEFOUT
Contextual Info: Philips Semiconductors Linear Products Product specification 8-Bit µp-compatible D/A converter NE/SE5018/5019 DESCRIPTION PIN CONFIGURATIONS The NE/SE5018/19 is a complete 8-bit digital-to-analog converter subsystem on one monolithic chip. The data inputs have input

I1N4148-1

Abstract: MR 4011 hall IC 44E 11N4148-1 1N414S-1 ic 4081 pin diagram 1N914/1N4148 AD3247 1N4148-1 JANS zc 5094
Contextual Info: MIL SPECS 44E □ □□ □1 55 J> □ □ 3 5 M b cî 1 • MILS The documentation and process conversion \ measures necessary to comply with this | revision shall be completed b y ^ , INCH POUND MIL-S-19500/116J 23 Julv 1992 SUPERSEDING MI L- S - 1 9 5 0 0 / 1 1 6 H