1N5551 DIODE Search Results

LM390

Contextual Info: 1N5551 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 1N5551 Availability Online Store

Contextual Info: RECTIFIER, up to 1kV, 5A, 2 jis January 7, 1998 1N5550 1N5551 1N5552 1N5553 1N5554 3SM2 3SM4 3SM6 3SM8 3SM0 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED STANDARD RECOVERY RECTIFIER DIODE QUICK REFERENCE DATA

Contextual Info: 1N5551+JANS Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current3.0 V(RRM)(V) Rep.Pk.Rev. Voltage400 t(rr) Max.(s) Rev.Rec. Time2.0u @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage1.2

3sm6

Abstract: DS-049 35M6 3SM4 1N5550 1N5552 1N5553 Diode 1N5554 35M8 3SM8
Contextual Info: SEMTECH CORP 5flE » • B M W 1N5550 1N5551 1N5552 1N5553 1N5554 STANDARD RECOVERY AXIAL LEADED HERMETICALLY SEALED STANDARD RECOVERY RECTIFIER DIODE 3SM2 3SM4 3SM6 3SM8 3SM0 • Vr = 200 - 1000V » If = 5.0A • trr = 2jaS • Vf = 1.0V unless otherw ise specified

Contextual Info: 1N5550/US 1N5551/US 1N5552/US 1N5553/US 1N5554/US SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 126, REV D JAN JANTX JANTXV HIGH CURRENT AXIAL LEAD RECTIFIERS DESCRIPTION: 200-1000 VOLT, 3.0 AMP, 2000 NANOSECOND RECTIFIER -Suffix “US” denotes melf/surface mount packaging

Contextual Info: 1N5551+JANTX Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current3.0 V(RRM)(V) Rep.Pk.Rev. Voltage400 t(rr) Max.(s) Rev.Rec. Time2.0u @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage1.2

3SM diode

Abstract: TL 5551 DIODE 3SM rectifier 50a rectifier 5A 1000V 042T
Contextual Info: iû^innMsc^ January 7, 1998 RECTIFIER, up to 1kV, 5A, 2\iS 1N5550 1N5551 1N5552 1N5553 1N5554 3SM2 3SM4 3SM6 3SM8 3SM0 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED STANDARD RECOVERY RECTIFIER DIODE QUICK REFERENCE

1N5550 JANTX

Abstract: 1n5551 diode 1N5553US 1N5551 JANTX 1N5551 1N5552 1N5553 1N5554 12 volt-30 amp power diode JANTXV 1N5552
Contextual Info: 1N5550/US 1N5551/US 1N5552/US 1N5553/US 1N5554/US SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 126, REV E JAN JANTX JANTXV HIGH CURRENT AXIAL LEAD RECTIFIERS DESCRIPTION: 200-1000 VOLT, 3.0 AMP, 2000 NANOSECOND RECTIFIER -Suffix “US” denotes melf/surface mount packaging

1N5551

Abstract: 1N5552 1N5553 JANTXV 1N5550 1N5553 1N5554
Contextual Info: 1N5550/US 1N5551/US 1N5552/US 1N5553/US 1N5554/US SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 126, REV F JAN SJ JANTX SX JANTXV SV HIGH CURRENT AXIAL LEAD RECTIFIERS DESCRIPTION: 200-1000 VOLT, 3.0 AMP, 2000 NANOSECOND RECTIFIER -Suffix “US” denotes melf/surface mount packaging

1N5550

Abstract: 1N5551 1N5552
Contextual Info: 1N5550 to 1N5552 VISHAY Vishay Semiconductors Standard Sinterglass Diode \ Features • Cavity-free glass passivated junction • High temperature metallurgically bonded construction • Hermetically sealed package • Medium switching for improved efficiency

1N5552 package

Abstract: 1N5550 1N5551 1N5552
Contextual Info: 1N5550 to 1N5552 VISHAY Vishay Semiconductors Standard Sinterglass Diode Features • Cavity-free glass passivated junction • High temperature metallurgically bonded construction • Hermetically sealed package • Medium switching for improved efficiency

1n5551

Abstract: 1n5552
Contextual Info: 1N5550 to 1N5552 VISHAY Vishay Semiconductors Standard Sinterglass Diode Features • Cavity-free glass passivated junction • High temperature metallurgically bonded construction • Hermetically sealed package • Medium switching for improved efficiency

1N5552 package

Abstract: 1N5550 1N5551 1N5552
Contextual Info: 1N5550 to 1N5552 VISHAY Vishay Semiconductors Standard Sinterglass Diode Features • Cavity-free glass passivated junction • High temperature metallurgically bonded construction • Hermetically sealed package • Medium switching for improved efficiency

33178

Abstract: JANTX 1N5552 1N5550 1N5550US 1N5551 1N5551US 1N5552 1N5554 1N5554US 1n5551 diode
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 19 July 2004. MIL-PRF-19500/420H 19 April 2004 SUPERSEDING MIL-PRF-19500/420G 30 December 2002 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER,

Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 6 December 2013. INCH-POUND MIL-PRF-19500/420M 6 September 2013 SUPERSEDING MIL-PRF-19500/420L 27 June 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER,

JANTX, JX, JAN

Abstract: Diode 1N5554 1N5554 JANTX JANTX 1N5552
Contextual Info: 1N5550 thru 1N5554 Available on commercial versions VOIDLESS HERMETICALLY SEALED STANDARD RECOVERY GLASS RECTIFIERS Qualified Levels: JAN, JANTX, JANTXV and JANS Qualified to MIL-PRF-19500/420 DESCRIPTION This “standard recovery” rectifier diode series is military qualified and is ideal for high-reliability

33178

Abstract: 1N5550 1N5550US 1N5551 1N5552 1N5553 1N5554 1N5554US 1N5554 JANTXV equivalent 1N5554 JANTXV
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 10 May 2010. MIL-PRF-19500/420L W/Amendment 1 10 February 2010 SUPERSEDING MIL-PRF-19500/420L 27 June 2008 PERFORMANCE SPECIFICATION SHEET

microsemi JX

Contextual Info: 1N5550 thru 1N5554 Available on commercial versions VOIDLESS HERMETICALLY SEALED STANDARD RECOVERY GLASS RECTIFIERS Qualified Levels: JAN, JANTX, JANTXV and JANS Qualified to MIL-PRF-19500/420 DESCRIPTION This “standard recovery” rectifier diode series is military qualified and is ideal for high-reliability

JANTX, JX, JAN

Abstract: MSC 880 Diode 1N5554 JANTX 1N5550 1N5554 JANTXV equivalent 1N5550 equivalent Microsemi micronote series 050 1N5553 JANTXV JX-47 1N5550
Contextual Info: 1N5550 thru 1N5554 Available on commercial versions VOIDLESS HERMETICALLY SEALED STANDARD RECOVERY GLASS RECTIFIERS Qualified Levels: JAN, JANTX, JANTXV and JANS Qualified to MIL-PRF-19500/420 DESCRIPTION This “standard recovery” rectifier diode series is military qualified and is ideal for high-reliability

SS5550

Abstract: ss555 SS5551 SS5554 1N5552 1N5550 1N5551 1N5553 1N5554
Contextual Info: SS5550/US SS5551/US SS5552/US SS5553/US SS5554/US SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5108, REV - HIGH CURRENT AXIAL LEAD RECTIFIERS DESCRIPTION: 200-1000 VOLT, 3.0 AMP, 2000 NANOSECOND RECTIFIER -Suffix “US” denotes melf/surface mount packaging

Contextual Info: 1N5550 thru 1N5554 M ierasemi Corp. The diode èxperts SANTA ANA, CA I nr m o'C m ío n n a lin n m ll- 714 979-8220 RECTIFIERS FEATURES • • • • V oid less herm etically sealed glass package. Triple layer passivation. M etallurgically bonded. JA N /TX /TX V available per M IL-S-19500/420.

VF09A

Abstract: 1N5550 1N5551 1N5552 1N5553 1N5554
Contextual Info: Microsemi Corp. ' Jfic diode pxpen^ 5 m ^ Pii»^ àL SANTA ANA, C'A For more information call: 7I4 979-8220 RECTIFIERS FEATURES • • • • 1N5550 thru 1N5554 Voidless hermetically sealed glass package. Triple layer passivation. Melallurgically bonded.

TL 5551

Abstract: 3sm2 diode 5551 3sm6 1N5550 1N5551 1N5552 1N5553 1N5554 1n5551 diode
Contextual Info: 1N5550 THRU 1N5554 3SM2 THRU 3SM0 Axial Leaded Hermetically Sealed Standard Recovery Rectifier Diode POWER DISCRETES Description Features Quick reference data ‹ ‹ ‹ ‹ ‹ VR = 200 - 1000V IF = 5.0A trr = 2µS VF = 1.0V Low reverse leakage current Hermetically sealed in fused metal oxide

1N6552

Contextual Info: 1N5550 thru 1N5554 MicrosemiCorp. 9 The diode experts j SANTA ANA, CA For more inform ation call: 714 979-8220 SCOTTSDALE, A Z / / FEATURES • • • • RECTIFIERS Voidless hermetically sealed glass package. Triple layer passivation. M etallurgical^ bonded.