1N459 Search Results

Contextual Info: 1N4590R Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current150 @Temp (øC) (Test Condition)110 V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.3.0k V(FM) Max.(V) Forward Voltage1.4 @I(FM) (A) (Test Condition)150 @Temp. (øC) (Test Condition)110

Contextual Info: 1N4594 R thru 1N4596(R) Silicon Standard Recovery Diode VRRM = 1000 V - 1400 V IF =150 A Features • High Surge Capability • Types from 1000 V to 1400 V VRRM DO-8 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode.

1N457A

Abstract: 1N459A
Contextual Info: Datasheet central 1N457A 1N459A Semiconductor Corp. SILICON DIODE 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC DO-35 CASE M anufacturers of W orld C lass D iscrete S em iconductors DESCRIPTION The CENTRAL SEMICONDUCTOR 1N457A, 1N459A types are silicon planar diodes designed for

BAV45

Abstract: CDSH27 CDH300 1N3595 1N457A 1N459A 1N485B 1N6263 CDH333 CDSH270
Contextual Info: Silicon Diodes DO-35 Case Continued Low Leakage Diodes TYPE NO. 1N457A 1N459A 1N485B 1N3595 CDH300 CDH333 VRRM (V) MAX 70 200 200 150 150 150 IO (mA) MAX 200 200 200 150 200 200 VF (V) MAX 1.0 1.0 1.0 1.0 1.0 1.05 @ IF (mA) 100 100 100 200 200 200 IR @ VR

1N4588R

Abstract: 1N4588
Contextual Info: 1N4588 R thru 1N4593(R) Silicon Standard Recovery Diode VRRM = 200 V - 1400 V IF =150 A Features • High Surge Capability • Types up to 1400 V VRRM DO-8 Package "R" Orientation Standard 2 2 1 2 1 2 1 1 Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

1N4858

Abstract: Schottky Diodes do-35 1N3595 1N457A 1N459A 1N485B 1N6263 1N645 1N647 1N649
Contextual Info: Silicon Diodes DO-35 Case Low Leakage Diodes TYPE NO. lo vF @ If IR @ VR cT V (mA) (V) (mA) (nA) (PF) MAX MAX MAX 1N457A 70 200 1.0 100 25 6.0 1N459A 200 200 1.0 100 25 6.0 1N485B 200 200 1.0 100 25 1.0 1N3595 150 150 1.0 200 3.0 8.0 CDH300 150 200 1.0 200

Contextual Info: 1N459/A Small Signal Diode DO-35 Color Band Denotes Cathode Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 200 V IF AV Average Rectified Forward Current 500 mA IFSM Non-repetitive Peak Forward Surge Current

diode IN456

Abstract: IN456
Contextual Info: 1N456 I n ter n a t/ onal S e m ic o n d u c t o r I n c . thru 1N463/A LOW LEAKAGE DIODES And Other Diodes DIFFUSED SILICON PLANAR ABSOLUTE MAXIMUM RATINGS NoteD Tem peratures S to ra g e T e m p e ra tu re : • M axm um J u n c tio n O p e ra tin g T e m p e ra tu re :

fdh900

Abstract: BA217 BA216 FD777 1N4151 1N4152 1N4153 1N4154 1N4305 1N4376
Contextual Info: FAIRCHILD DIODES DIODES COMPUTER DIODES BY ASCENDING trr GLASS PACKAGE DEVICE NO. trr ns Max BV V Min 1 FD700 0.70 30 2 1N4376 0.75 20 3 BAY82 0.75 15 100 12 1.0 4 FD777 0.75 15 100 8.0 1.0 5 1N5282 2.0 80 100 55 1.3 Item Vr V Vf V Max 50 20 1.1 100 10 1.1

RSN 3306 H

Abstract: ITT RZ2 g6 TDA 8841 IC rsn 3404 SN76670 4L71 bu 2508 af equivalent MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR sn76131 a1208 transistor
Contextual Info: G ENERAL IN FO R M A TIO N INDEXES Numerical • Functional • Cross-Reference DISCRETE SEMICONDUCTORS A N D COMPONENTS O R D ER IN G INSTRUCTIO NS A N D M EC HA NICA L D ATA MACH IV PROCUREMENT SPECIFICATION L IN EA R CIRCUITS ECL CIRCUITS SERIES 54S/74S CIRCUITS

1N3289A

Abstract: S4320 1N2436 1N2437 1N2438 1N2439 1N2440 1N3288A 1N4587 S4310
Contextual Info: Silicon Power Rectifier S / R 4 3 Series :° > i H Mh I AA B » I ♦S4330 Peak Reverse Voltage JEDEC Numbers Microsemi Catalog Number 1N2436 1N2437 1N2438 1N2439 1N2440 1N2441 1N2442 1N2443 1N2444 1N2445 1N3288A _ _ _ 1.050 1.060 1.166 4.70 .640 .233

1N4548

Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
Contextual Info: Discrete POWER & Signal Technologies Diode Cross-Reference Guide Industry Part Number 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A 1N128 1N128A

MMBD1502A

Abstract: LS923 BAV80 1N4148 SOT-23 MARKING JM FDH444 1N4148 ll-34 1N3070 1N459 1N459A
Contextual Info: fcot a m bSDllBO DOHTSO? 4Z3 • NATL S E H I C 0 N D Irrm nA Max V RRM (Volts) Min 250 200 150 Device (D ISCRET E) @ iF Iff (ns) (Volts) <n»A) Max Max V RRM Package* (Volts) Min Vfiw I f Irrm Device Diodes Silicon Single Junction Diodes (nA) Max (1»)

ECG Amplifier

Abstract: 3656AG 3656BG 3656HG 3656JG 3656KG 6730S burr-brown 100ms "Isolation Amplifier" ecg ECG book
Contextual Info: 3656 Transformer Coupled ISOLATION AMPLIFIER FEATURES APPLICATIONS ● INTERNAL ISOLATED POWER ● 8000V ISOLATION TEST VOLTAGE ● MEDICAL Patient Monitoring and Diagnostic Instrumentation ● INDUSTRIAL Ground Loop Elimination and Off-ground Signal Measurement

1N456

Abstract: 1N456A 1N457 1N457A 1N458 1N458A 1N459 1N459A Scans-0016000
Contextual Info: Diode Data NATL SEMICOND DISCRETE HE D [ faSQliaO 0037GQ1 7 | Low Leakage Diodes Glass Package Device No. 1N456 Package No. DO-35 VRRM V Min •r nA Max 30 25 Vr V If mA C PF Max 1.0 40 10 VF v Min 25 ® Max 1N456A DO-35 30 25 25 1.0 100 1N457 DO-35 70

AN-97

Abstract: T310 kemet LM222 "Optical Coupler" KEMET T310 T310 tantalum AN007408 scr firing circuit ac regulator LP9A1A data sheet of lm3905
Contextual Info: National Semiconductor Application Note 97 December 1973 INTRODUCTION Timing functions, until recently, have been somewhat neglected by integrated circuit manufacturers. The primary reason was the extremely wide range of input and output signals currently incorporated in discrete designs. In addition,

S/R43 SERIES

Abstract: 1N2436 1N2437 1N2438 1N2439 1N2440 1N3288A 1N3289A 1N4587 S4310
Contextual Info: Silicon Dower Rectifier s / R4I-3 Series —I MI— <0>I A B C D F G H J K M R T AA PP DD I - C - Notes: 1. 3 / 8 - 2 4 U N F-3A 2. Full threads within 2 1 /2 threads 3. Accepts 1 / 4 - 2 8 UNF-2B Nut 4. Reverse polarity: Stud is Anode ♦S4320 ♦S4330

IN3599

Abstract: 1N9168 1N4242 IN485 IN625 1N20S 1N4389 1N4243 in648 IN458a
Contextual Info: jomltron « • - _ SemitronicsCorp. ■ SS 481.1541= DD0DB05 3 ■ H iç rrp tp sem ico nd u c to r s IN T E X / SEMITRONICS CORP S7E D _ , , , / / / silicon diodes Reverse Current «A)150°C (See Notes) 5.0 SO 56 50 50 6.5 2.0 1.0 2.0 2.0 15 1.5

IN4054R

Abstract: IN4048R IN4045 1N2131 IN3294 B 1186a 1N1202 1N1201 IN4056R IN4048
Contextual Info: S E M IC O N D U C T O R S IN C CHE D f fil3 b tiS 0 Q DO DSbB 0 | Silicon Power Rectifiers 6 AMP - D04 Peak Reverse Voltage JEDEC Numbers 1N1341, 1N1612, 1N1342, 1N1613, 1N1341A, 1N1341B, 1N1581, 1N2228, 1N2491 1N1342A, 1N1342B, 1N1582, 1N2492 1N1343, 1N1343A, 1N1343B

1N4848

Abstract: 1N4868 1N4828 1N484 1N4858 1N456 1N456A 1N457A 1N458 1N458A
Contextual Info: Diode Data NATL SEMICOND DISCRETE H E D [ f c , 5 ai l 3D GQ37QQ1 7 Low Leakage Diodes Glass Package If mA C PF Max Proc No. 1.0 40 10 D2 1.0 100 VF V VRRM V Min •r nA Max DO-35 30 25 25 1N4S6A DO-35 30 25 25 1N457 DO-35 70 25 60 1.0 20 1N457A DO-35 70

N1702

Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
Contextual Info: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961

E421 fet

Abstract: equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet
Contextual Info: Discretes from Teledyne Semiconductor In this catalog are listed more than 2000 high-quality diodes, bipolar transistors and JFETs available from Teledyne Semiconductor. Key specifications are included for each device and many are available w ith hi-rel processing to m ilitary specifications.

SEM 5027A

Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
Contextual Info: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES

st178

Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment