1N4137 Search Results

1N21

Abstract: 1N2128 1N2129 S35100 S35120 S35140 S35160 S3520 S3540 S3560
Contextual Info: Silicon Power Rectifier S/R35 D im . In c h e s M inim u m -1 p H 1 r I- w ^ A B C D E F G H J K 1t t 1 r n. 1 ~1 A M ic ro s e m i C a ta lo g N u m b e r 1 n G 1 r E 1 N o te s : 1. 1 / 4 - 2 8 2 . Full th r e a d s w ithin 2 1 / 2 th re a d s 3 . S ta n d a rd p o la rity :

sw02pcn040

Abstract: A72D SD071N04P SW04PCN040 A77D SD071R04P F6G3 sd070n04p sd070r04p sd071r04
Contextual Info: SILICON RECTIFIERS, UNDER 1 kV Item Number Part Number Manufacturer lo Max VRRM IFSM vF Max A 00 (A) (V) IR IF @ Test (A) VR 25 °C @ Test (A) (V) T2 IR @ Test (A) (°C) T Op«r Package Style Max (°C) General-Purpose, lo >= 50 A (Cont'd) . . . .5 . . .

Contextual Info: Dim Inches M illim eter Minimum Maximum Minimum Maximum Notes A B C D E F G H J K M N P Notes: 1. 1 / 4 - 2 8 2. Full th re a d s within 2 1 /2 thre a d s 3. Standard polarity; Stud is cathode Reverse polarity: Stud is anode Microsem i C atalog Number Peak Reverse

Contextual Info: Microsemi Standard Recovery Rectifiers Part Number Microsemi Division Package Outline Mil ' Data IO I VR IFSM VF @ IO i 1R Spec : Sheet ID Amps ! (Volts) ' (Amps) (Volts) I (uA) Type 1 REC 1N2131A DO-5 DO-5 DO-5 DO-5 Í DO-5 DO-5 DO-5 DO-5 DO-5 DO-5 ; DO-5

1N245

Abstract: 1N4137 1N2128 1N2129 1N2130 S35100 S35120 S35140 S35160 S3520
Contextual Info: Dim Inches M illim eter Minimum Maximum Minimum Maximum Notes 1 p h M i ^ H A B C D E F G H J K M N P I X . 1 G r b D Microsemi Catalog Number Notes: 1. 1 / 4 - 2 8 2. Full threads within 2 1 /2 threads 3. Standard polarity; Stud is cathode Reverse polarity:

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

FSFA2100

Abstract: MSR211 asymmetric flyback EER3542
Contextual Info: FSFA2100 — Fairchild Power Switch FPS for Half-Bridge PWM Converters Features Description • The growing demand for higher power density and low profile in power converter designs has forced designers to increase switching frequencies. Operation at higher

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

BA100 diode

Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any