1N3672 Search Results

Contextual Info: DIGITRON SEMICONDUCTORS 1N3670A-1N3673A STANDARD RECOVERY RECTIFIERS ELECTRICAL CHARACTERISTICS Symbol 1N3670 1N3671 1N3672 1N3673 Repetitive peak reverse voltage Characteristics VRRM 700V 800V 900V 1000V Maximum RMS reverse voltage VRMS 490V 560V 630V 700V

Contextual Info: 1N3672 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current12 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage900 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.200 V(FM) Max.(V) Forward Voltage2.05 @I(FM) (A) (Test Condition)12 @Temp. (øC) (Test Condition)

Contextual Info: Silicon Power Rectifier Series Dim Inches M illim eter Minimum Maximum Minimum Maximum Notes 1 l~ - k ? : LIL i i j = =\ j l n J f T \ E Notes: 1. 1 0 - 3 2 UNF3A 2. Full th re a d s w ithin 2 1 /2 th re a d s 3. S tandard P olarity: S tud is C athode Reverse P olarity: Stud is

1N1206RA

Abstract: i2t graph 1N1199A 1N1200A 1N1201A 1N1202A 1N1203A 1N1204A 1N1205A 1N5331
Contextual Info: 1 Silicon Rectifiers 1N1195 SE E PAG E 203 1N1199A-1N1206A 1N1199RA-1N1206RA 1N3670A-1N3673A 1N5331 These diffused junction rectifiers are designed specifically to provide high perform ance fo r ap p li­ cations up to 22 am peres A verage F orw ard C u rren t in single-phase applications w ith repetitive

1N1206RA

Abstract: A78A 1N1612 1N5331 pi 216 RA500
Contextual Info: FAST R EC O VER Y RECTIFIERS SELECTOR GUIDE 2000 1500 1000 900 600 « 700 ! j 600 § 500 s z 400 5 300 § 200 H_ l O> fOO 90 80 70 60 50 I 3 6 12 20 25 30 100 140 2 5 0 4 0 0 750 IK AVERAGE CURRENT-AMPERES S T A N D A R D RECTIFIERS SELECTOR GUIDE V3 3000

Contextual Info: STANDARD RECOVERY RECTIFIERS STUD BASE DO-4 & DO-5 lQ RATING TO 60 AMPS FEATURES: DESCRIPTION • Hermetic Seal This is a series of general purpose rectifiers with average forward current ratings up to 60 Amps. They are for general purpose use in power supply and other rectification applications.

UNF-2A

Abstract: 1N36
Contextual Info: 1N1.A, 1N36.A Series Vishay High Power Products Medium Power Silicon Rectifier Diodes, 12 A FEATURES • Voltage ratings from 50 to 1000 V RoHS • High surge capability COMPLIANT • Low thermal impedance • High temperature rating • Can be supplied as JAN and JAN-TX devices in

S2120

Abstract: 1n259 1N2246 1N2248 1N2250 1N2252 1N2254 1N2598 1N2784 1N4506
Contextual Info: Silicon Power Rectifier Series Dim Inches M illim eter Minimum Maximum Minimum Maximum Notes A B C D E F G H J M N P Notes: 1. 1 0 - 3 2 UNF3A 2. Full th re a d s w ithin 2 1 /2 th re a d s 3. S tandard P olarity: S tud is C athode Reverse P olarity: Stud is

1N2246

Abstract: 1N2248 1N2250 1N2252 1N2598 1N2784 1N4506 S2120 S2140 1N259
Contextual Info: Silicon Power Rectifier S /R21 Series Dim Inches M illim eter Minimum Maximum Minimum Maximum Notes A B C D E F G H J M N P Notes: 1. 1 0 - 3 2 UNF3A 2. Full threads within 2 1 /2 threads 3. Standard Polarity: Stud is Cathode Reverse Polarity: Stud is Anode

IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK

Contextual Info: 1N1.A, 1N36.A Series Vishay High Power Products Medium Power Silicon Rectifier Diodes, 12 A FEATURES • Voltage ratings from 50 to 1000 V RoHS • High surge capability COMPLIANT • Low thermal impedance • High temperature rating • Can be supplied as JAN and JAN-TX devices in

Contextual Info: INTERNATIONAL RECTIFIER 2bE D U 4 a S S « 2 0Q10b7H 0 International k » 1Rectifier Rectifiers, Standard Recovery 6 T O 40 A M P S Part V RRM *F AV @ TC number (V) 6F10 6F20 6F40 6F6Ö 6F80 6F100 6F120 100 200 400 600 800 1000 1200 12F10 12F20 12F40 12F60

1N1199A

Abstract: 1N1200A 1N1201A 1N1202A 1N1203A 1N1204A 1N1205A 1N1206A 1N36 DO-203AA
Contextual Info: 1N1.A, 1N36.A Series Vishay High Power Products Medium Power Silicon Rectifier Diodes, 12 A FEATURES • Voltage ratings from 50 to 1000 V RoHS • High surge capability COMPLIANT • Low thermal impedance • High temperature rating • Can be supplied as JAN and JAN-TX devices in

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

JANTX1N1184

Abstract: JAN1N1 1N3768
Contextual Info: Standard Recovery Rectifiers Microsemi f I- Part Number 1N3767 1N3768 1N3768 1N4529 JAN1N3768 JANTX1N3768 JANTXV1N3768 1N4530 1N5332 1N5332 1N1301 1N248 1N248A 1N248B 1N248C 1N1302 1N249 1N249A 1N249B 1N249C 1N1304 1N250 1N250A 1N250B 1N250C 1N1306 1N3670A

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

1n259

Abstract: 1N2598 1N2246 1N2248 1N2250 1N2252 1N2784 1N4506 S2120 S2140
Contextual Info: Silicon Power Rectifier S/R21 Series Dim Inches M illim e te r M inim um M axim um M inim um M aximum N otes A B C D E F G H J M N P Notes: 1. 1 0 - 3 2 UNF3A 2. Full th re a d s w ithin 2 1 /2 th re a d s 3. S ta n d a rd P o la rity. Stud is C athode Reverse P o la rity: Stud is

1N36

Abstract: 1n1199
Contextual Info: 1N1.A, 1N36.A Series Vishay High Power Products Medium Power Silicon Rectifier Diodes, 12 A FEATURES • Voltage ratings from 50 to 1000 V RoHS • High surge capability COMPLIANT • Low thermal impedance • High temperature rating • Can be supplied as JAN and JAN-TX devices in

A28A

Abstract: 1N1199A-1206A 1N3987 1N5331 IN1346A 1N1341A-48A A28F-D 1N1614
Contextual Info: SILICON RECTIFIERS MEDIUM CURRENT 5 TO 12 AM PERES 1N1612-16 1N134 1A-48A JEDEC — GE T Y P E S — 1N3987-90 1N3879-83 — 1N 1199A-1206A 1M3670A-73A 1N5331 1 N4510-11 1N3889-93 A28F-D — A129E-PB — E LE C T R IC A L S P E C IFIC A T IO N S I f m a v

1N1115

Abstract: 1N255 MR1121 1N1118 1N1540 1N254 1N1116 MR1120R 1N1117 1N611
Contextual Info: MR1 120 th ru MR1 126 SILICON MR1128 MR1130 Medium-current silicon rectifiers featurehigh surge current capacity, and low forward voltage drop. CASE 245 (DO-4) M A X IM U M R A T IN G S Rating Symbol MR MR MR MR MR MR MR MR MR 1120 1121 1122 1123 1124 1125 1126 1128 1130

Contextual Info: 1N1.A, 1N36.A Series www.vishay.com Vishay Semiconductors Medium Power Silicon Rectifier Diodes, 12 A FEATURES • Voltage ratings from 50 V to 1000 V • High surge capability • Low thermal impedance • High temperature rating • Can be supplied as JAN and JAN-TX devices in