1N3665 Search Results

Contextual Info: 1N3665 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current30 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.400 V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)25 @Temp. (øC) (Test Condition)100#

1N3492

Abstract: 1N3493 1N3495 1N3491 FSM400 1N3494 S3560PF 1N3659 1N3660 S3520PF
Contextual Info: Silicon Power Rectifier S /R 3 5 P F Series Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes M A B C D E F G H h Standard Polarity: Case is Cathode Reverse Polarity; Case is Anode Microsemi Catalog Number S3520PF S3540PF S3560PF JEDEC Number 1N3491, 1N3659

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

IN3492

Abstract: sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r
Contextual Info: NIAX VAX U E S 0 2 5 ° D IO D E Vw PRV If Vf IR T Y P E u S E 0A5 100 .3 5 1 .3 30 G GP 0 A6 60 .3 5 1 .3 9 .0 G GP 0A7 30 .2 5 1 .7 6 .0 G SW O A IO 30 1 .0 .9 5 600 G SW OA3I 85 12 0 .7 40 G GP 0A47 30 .1 5 .6 5 10 G 0A70 2 2 .5 . 15 .2 5 30 G RF OA71 90

1N3492

Abstract: DO-208 DO208 1N3493 1n3660 S3540PF 1N3491 1N3494 1N3659 1N3661
Contextual Info: Silicon Power Rectifier S / R 3 5 P F Series CO ! M Dim. Inches Minimum A B C D E F G H h C E 1 1 _ !_ .590 .499 .600 .350 .090 .045 .030 .500 M illimeter Maximum Minimum .630 .510 .370 .130 .053 .035 .510 15.0 12.6 15.2 8.90 2.28 1.14 .762 12.7 Maximum Notes

BA100 diode

Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any

Contextual Info: Silicon Power Rectifier D Series Dim. Inches Î 00 { Minimum A B C D E F G H h M c E 1 I _L_ I I I G 1 D 1 \ — B— S3520PF S3540PF S3560PF R epetitive Peak Reverse V oltage 50V 100V 200V 300V 400V 500V 600V 16.0 Dia. 12.6 15.2 8 .9 0 13.0 Dia. 9.4 0 2 .2 8