1N320 Search Results

1N5332

Contextual Info: DIGITRON SEMICONDUCTORS 1N3208-1N3214, 1N5332 STANDARD RECOVERY RECTIFIERS MAXIMUM RATINGS Symbol Parameter Value TSTG Storage temperature range -65 to +200°C TJ Operating junction temperature range -65 to +200°C RθJC Maximum thermal resistance 1.25°C/W junction to case

A41E

Abstract: A40e A139 A40A A41B A40D GE A40B A40F A40B GE A41B
Contextual Info: RECTIFIERS 20 TO 25 AMPERES 1N 248& JEO EC 50B 1N 1195 A9 8A 1N215460 - GE T Y P E 1 N 1183-90 1N3765-68 1N5332 1N452930 - 1N1183A90A 1N38993903 1N390913 1N320814 - - - A40F A44F A 139 S P E C IF IC A T IO N S * F M A V Max. average forward current (1 phase oper­

N3206

Abstract: 1N3206 in 3 N3064M
Contextual Info: 1N897 - 1N902, 1N3064M, 1N3069M, 1N3206,1N3207, MC914, MC914A, MC916, MC916A, MCOOlj MCOOIAj MC002 Microsemi Corp. s c o rra , ^ j For more information call: 714 979-8220 / PELLET DIODES FEATURES • M ic r o m in ia tu r e p a c k a g e . • F a s t re c o v e ry .

1N3208

Abstract: 1N3208R 1N3209 1N3209R 1N3210 1N3211 1N3212 1N3213 1N3214 DO-203AB
Contextual Info: 1N3208 Series Vishay High Power Products Stud-Mounted Silicon Rectifier Diodes, 15 A DESCRIPTION/FEATURES • Low thermal impedance RoHS • High case temperature COMPLIANT • Excellent reliability • Maximum design flexibility • Can be made to meet stringent military, aerospace and

DIODE 1n1183

Contextual Info: VS-1N3208 Series www.vishay.com Vishay Semiconductors Silicon Rectifier Diodes, Stud Version 15 A FEATURES • Low thermal impedance • High case temperature • Excellent reliability • Maximum design flexibility • Can be made to meet stringent military, aerospace and

Contextual Info: asi 1N3208 SILICON RECTIFIER DESCRIPTION: The 1N3208 is a General Purpose Rectifier Designed for Power Supply Applications. PACKAGE STYLE D O - 5 MAXIMUM RATINGS 50 V V rwM 15 A lo AVG @ Tc = 150 °C Tj -65 °C t o +175 °C T stg -65 °C t o +175 °C 0JC

1N3208

Abstract: 1N3208R 1N3209 1N3209R 1N3210 1N3210R 1N3211
Contextual Info: Data Sheet No. PD-2.010C INTERNATIONAL RECTIFIER I«R 1N3208 SERIES 15 Amp Stud-mounted Silicon Rectifier Diodes M ajor Ratings and Characteristics it A v ; 0 1C |2 t U n its 15* A 150* o<- '• 5 0 h 239 X o CD lc-s~M Description/Features 1N 32D 8 250* & 5C H r

a44e

Abstract: diode ge a40f A45A 1N3909-13 A44M A139 A45E A45M A44B A44A
Contextual Info: RECTIFIERS 20 TO 25 AMPERES 1N 248& 50B JEO EC 1N 1195 A98A 1N215460 - GE T Y P E 1N1183-90 1N3765-68 1N5332 1N452930 - 1N1183A90A - 1N390913 1N320814 - - A 40F A 44F 1N38993903 A139 S P E C IF IC A T IO N S *FM A V Max. average forward current (1 phase oper­

1N3206

Abstract: 1N3064M 1n900 MC914 1N3069M 1N3207 1N897 1N902 MC001 MC914A
Contextual Info: 1N897 - 1N902, 1N3064M, 1N3069M, 1N3206,1N3207, MC914, MC914A, / Microsemi Corp. f m SCOTTSDALE, AZ / / F o r m o r e in f o r m a ti o n call: 7I4 979-S220 M C 9lO , M C 910A , The diode experts / SANTA ANA, CA MC001, MC001A, MC002 PELLET DIODES FEATURES

in3208

Abstract: In3209 IN3212 IN3214 1N3210 1N3209 EDAL 4156 1N3208 1N3212
Contextual Info: EDAL INDUSTRIES INC M5E D 3GTS71b DOODB'iD EÔ3 IEDL HEX. 11/16“ ACROSS FLATS Of ' / 7 N .150” B. PIV See Tab I e Io 15 amps IS. 150 2sn _ AMPS 1.5 _V @ CASE 40 amps 25 1 ma PIV 25 10 ma PIV 150 STYLE_ D05 STAMP Edal P/N P/N ' PIV volts 1N3208 1N3209

Contextual Info: 1N3208 thru 1N3211R Silicon Standard Recovery Diode VRRM = 50 V - 600 V IF = 15 A Features • High Surge Capability • Types up to 600 V VRRM DO-5 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base.

MC 4011 B

Abstract: 1N3207
Contextual Info: MIL SPECS I C | 0 0 G D 1 2 S DOOSSEb T |~~ INCH-POUND NOTICE OF VALIDATION MIL-S-19500/230C NOTICE 1 29 August 1988 MILITARY SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH-CONDUCTANCE TYPE JAN - 1N3207 Military specification MIL-S-19500/230C, dated 12 February

1N2155

Abstract: 1N249B 1N3785 1N1184 1N3786 1N3899 1N4529 1N1183A 1N1191A 1N1195A
Contextual Info: DIODE TRANSISTOR CQ,1HIC. | RECTIFIERS 20 TO 40A AMPERES JEOEC 1N248B50B 1N 1195A - 1N2154* I N 5332 1N4529* 1N1183A- 30 90A 1N38993903 1N3909* 13 1N320814 98A 60 20 25 35 35 40 20 30 20 150 145 140 115 150 100 100 110 S P E C IF IC A T IO N S IFM AV Max. average forward

Contextual Info: 1N3208 Series Vishay High Power Products Stud-Mounted Silicon Rectifier Diodes, 15 A DESCRIPTION/FEATURES • Low thermal impedance • High case temperature • Excellent reliability • Maximum design flexibility • Can be made to meet stringent military, aerospace and

Contextual Info: 1N3208 thru 1N3211R Silicon Standard Recovery Diode VRRM = 50 V - 300 V IF = 15 A Features • High Surge Capability • Types from 50 V to 300 V VRRM DO-5 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode.

Contextual Info: 1N3208 Series www.vishay.com Vishay Semiconductors Silicon Rectifier Diodes, Stud Version 15 A FEATURES • Low thermal impedance • High case temperature • Excellent reliability • Maximum design flexibility • Can be made to meet stringent military, aerospace and

1N23 diode

Abstract: 1N53AR 1N26A diode Silicon Point Contact Mixer Diodes 1N415 1N832A N178 kaba 1N23WG 1N26BR
Contextual Info: EBAlpha Silicon Point Contact Mixer Diodes 1N2XX, 1N3205,1N25XX, 1N78X, DMA649X-XXX Series Features • High Burnout Resistance ■ Low Noise Figure, even in the Starved LO Mode ■ Hermetically Sealed Description Alpha’s point contact mixer diodes are designed for

1N3208

Abstract: 1N3208R 1N3209 1N3210 1N3211 1N3212 1N3213 1N3214 DO-203AB
Contextual Info: 1N3208 Series Vishay High Power Products Stud-Mounted Silicon Rectifier Diodes, 15 A DESCRIPTION/FEATURES • Low thermal impedance • High case temperature • Excellent reliability • Maximum design flexibility • Can be made to meet stringent military, aerospace and

1N3208

Abstract: 1N3208R 1N3209 1N3209R 1N3210 1N3211 1N3212 1N3213 1N3214 DO-203AB
Contextual Info: 1N3208 Series Vishay High Power Products Stud-Mounted Silicon Rectifier Diodes, 15 A DESCRIPTION/FEATURES • Low thermal impedance RoHS • High case temperature COMPLIANT • Excellent reliability • Maximum design flexibility • Can be made to meet stringent military, aerospace and

1N93A

Abstract: 2N78A MIL-S-19500 1N1184 1N249B 1N3713 1N4532 1N4148 JANTX 1N4148 JAN 2n526
Contextual Info: SILICON RECTIFIERS MEDIUM CURRENT 20 TO 40 AMPERES JEDEC 1N2488 50B 1N1195A-98A 1N2154-6Q 1N1183-90 1N3765-68 1N5332 1N1183A40A 1N3899-3903 1N3909-13 1N4529-30 GE TYPE 1N3208-14 A40F-M A44F-M ELEC TR IC A L SPECIFICATIO NS I fm av Max. average forward cur­

ic 4016

Abstract: 1N3206 DIODE PK IN 4001 MIL-STD-750 METHOD 2036 1n4373 MIL-STD-750 METHOD 2036 CONDITION E MIL-S-19491 D253S IC 4011 details
Contextual Info: MIL SPECS 0000155 NOTICE OF VALIDATION 000253*4 T | INCH-POUND MIL-S-19500/195D NOTICE 1 26 August 1988 MILITARY SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, MICRO-MINIATURE, SWITCHING TYPE 1N3206 Military specification MIL-S-19500/195D, dated 6 August

Contextual Info: 1N3208 Silicon Rectifier 7.88 Diodes Silicon Rectifiers General-Purpose American Micr. Page 1 of 1 Enter Your Part # Home Part Number: 1N3208 Online Store 1N3208 Diodes Silicon Rectifier Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

1N3209

Contextual Info: 1N3209 100V 15A Std. Recovery Diode In A DO-203AB DO-5 package 4.87 Diodes Si. Page 1 of 1 Enter Your Part # Home Part Number: 1N3209 Online Store 1N3209 Diodes 100V 15A Std. Recovery Diode In A DO-203AB (DO-5) Transistors package Integrated Circuits Optoelectronics

Contextual Info: 1 rT T n m P A A / f t O A / i i Y H J ü - ö - J . » a U U / 60\JKs AMENDMENT 1 12 September 1968 SEMICONDUCTOR DEVICE, DIODE, bluCuN , HIGH-CONDUCTANCE TYPE JAN-1N3207 This amendment forms a part of Military Specification MIL-S-195Q0/230C, dated 12 February 1965, and is mandatory for use by all Departments and