1N3141 Search Results

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N1398

Abstract: 1N1399 1N1396 1N1397 1N2426 1N2427 1N3139 1N3140 1N3288 1N411B
Contextual Info: Silicon Power Rectifier N32 88—1N3297 Dim. Inches M illim eter Minimum Maximum Minimum Maximum Notes A B C D F G H J K M R S Notes: 1. 3 / 8 - 2 4 U N F -3 A 2. Full th re ad s within 2 1 /2 threads 3. Standard p olarity; Stud is Cathode Reverse p olarity; Stud is Anode

1N413B

Contextual Info: Silicon Power Rectifier 1N3288—1N3297 Dim Inches Millimeter Minimum Maximum Minimum Maximum Notes A B C D F G H J K M R S Notes: 1. 3 / 8 - 2 4 UNF-3A 2. Full threads within 2 1/ 2 threads 3. Standard polarity: Stud is Cathode Reverse polarity: Stud is Anode

sw02pcn040

Abstract: A72D SD071N04P SW04PCN040 A77D SD071R04P F6G3 sd070n04p sd070r04p sd071r04
Contextual Info: SILICON RECTIFIERS, UNDER 1 kV Item Number Part Number Manufacturer lo Max VRRM IFSM vF Max A 00 (A) (V) IR IF @ Test (A) VR 25 °C @ Test (A) (V) T2 IR @ Test (A) (°C) T Op«r Package Style Max (°C) General-Purpose, lo >= 50 A (Cont'd) . . . .5 . . .

1n3291s

Contextual Info: Silicon Power R e c t i f i e r Dim. Inches M illim e te r M inim um M axim um A B C D F G H J K M R S M inim um M axim um - - - - 1.0 4 0 1.0 6 0 1.166 4 .6 5 .6 4 0 .2 3 3 .7 4 5 .3 7 3 .2 8 6 .6 7 0 .8 5 0 .120 2 6 .6 7 2 6 .9 2 29.61

Contextual Info: Silicon Power Rectifier 1N3288—1N3297 Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes A B C D F G H J K M R S Notes: 1. 3 / 8 - 2 4 U N F-3A 2. Full threads within 2 1 /2 threads 3. Standard polarity: Stud is Cathode Reverse polarity. Stud is Anode

S4290

Abstract: 1N2437 IN139 s4205 1N1397 1N2426 1N2427 1N2436 1N3139 1N411B
Contextual Info: Series 42 I B B Avalanche Silicon Power Rectifiers E L E C T R IC A L C H A R A C T E R IS T IC S : M a x im u m A v e ra g e F o r w a r d C u rre n t, S in g le P h a se H a lf W a v e DC R a tin g a t 1 3 0 ° C . C a s e T e m p e ra tu re . 125 am p e re s

1N1399

Abstract: 1N1396 1N1397 1N2426 1N2427 1N3139 1N3140 1N3288 1N3297 1N411B
Contextual Info: Silicon Power Rectifier 1N3288—1N3297 Dim. Inches M illim eter Minimum Maximum Minimum Maximum Notes A B C D F G H J K M R S Notes: 1. 3 / 8 - 2 4 U N F-3A 2. Full threads within 2 1 /2 threads 3. Standard polarity; Stud is Cathode Reverse polarity: Stud is Anode

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

1n3140

Abstract: 1N3139 1N3139-1N3142 1N3141 1N3142
Contextual Info: 1N3139-1N3142 Series High Current Rectifier VRRM = 50-200V, IF AV = 100 A ,VF = 1.2V Symbol A K Cathode to Stud Symbol Cathode to Stud Shown (Anode to Stud add Suffix R) MAXIMUM RATINGS (Tj = 25 C unless stated otherwise) Parameter Symbol 1N3139 50 Repetitive Peak Reverse Voltage

1N314

Abstract: 1N4588
Contextual Info: Standard Recovery Rectifiers Part Number Microsemi Division Package Outline Type Mil Spec Data Sheet ID IO lA-i-ps Microsemi VR IFSM VC *5 ID Volt») (Amps) (Volts) IR (uA) ; trr (nsec) 1N3296A 1N3297 1N3297A 1N1660 1N1661 1N1662 1N1663 1N1664 1N1665 1N1666

BA100 diode

Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any

1N4539

Abstract: SOLID STATE INC 1N4588 1N2438 1N1396 1N1397 1N1398 1N2426 1N2427 1N2428
Contextual Info: Silicon Power Rectifier D08 NOTES: 1. T he devtce w ith ex ce p tio n 0< Che h u a j c « . ttw e a d j n d fU itb U '»*<3 e x ten sio n lie* w ith in th e c y lin d e r d«1w>til b y 0 « n u 1 .0 6 3 M U a . and le n g th 2 .S 0 0 W ax. 2 . A n g u la r o rie n ta tio n e f U f m iiU l w it h m p e c t ta i w x i j c n i l p o rtio n

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY