1MBI400F060 Search Results

Contextual Info: 1MBI400F060 Transistors Independent IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)600 V(BR)GES (V) I(C) Max. (A)400 Absolute Max. Power Diss. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case87m

Contextual Info: 1MBI400F-060 400A *± IGBT IGBT MODULE Features • l£ ta fn ^ /± L ow S a tu ra tio n V o lta g e • f lf f iB if r ( M O S ^ — h fljiil) • V o lta g e D rive V a rie ty o f Pow er C apacity Series : Applications > '< — 9 • A C , D C 1 f — i£ ~ 7 's ~ f

LTS2020

Abstract: 6MBI30FA-060 6MBI50FA-060 LTS-2020 2mbi200f 6MBI75FA060
Contextual Info: J 600 volts class IGBT m odules/Low on-state voltage F series • Low saturation voltage • Voltage drive m e th o d pe rm its low po w e r drive Device type VcFS V o lts V ges V o lts Ic cont. A m p s. Pc W atts VcE(sat) M ax. V olts S w itc h in g tim e (M ax.)

6DI15S-050

Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Contextual Info: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140

DIODE A112

Abstract: 1MBI400F-060 30S3 M116 T151 T460 T930 A200Y
Contextual Info: 1MBI400F-060 400A *± IGBT IGBT MODULE Features • l£ ta fn ^ /± L ow S a tu ra tio n V o lta g e • f lf f iB if r ( M O S ^ — h fljiil) • V o lta g e D rive V a rie ty o f Pow er C apacity Series : Applications > '< — 9 • A C , D C 1 f — i£ ~ 7 's ~ f

2mb1200

Abstract: 2mb1200lb-060 2MBI100F-060 M-219 m219 1MBI300F-060 2MBI150F-060 2mbi200f 2MBI300F-060 2MBI50F-060
Contextual Info: m 2 E 3 & 7 oooa'ì'ì? 513 IGBT • 600 VOLT, F-SERIES MODULES • Low saturation voltage Device VCES Pc VcE sat R th RTH VF W Per IGBT Max. lc ton toff tf IGBT Diòde Max. Max. Am ps W atts V olts Am ps jjse c. usee. usee. °C/W °C/W Volts usee. 600 600

6MBI50FA-060

Abstract: 2mbi200f 6MBI10F
Contextual Info: /\°7—T / W * / Power Devices • IG B T ïv a - ^ F v 'J -X IG BT Modules, F series 600V ? 7 Z 1 & * > W E B 600 volts class/Low on-state voltage m & Device type 2MBI50F-060 2MBI75F-060 2MBI100F-060 2MBI150F-060 2MBI200F-060 2MBI300F-060 1MBI300F-060 1MBI400F-060

1MBI30L-060

Abstract: 6MBI30FA-060 collmer igbt 2mbi200f 2mbi25f 1MBI50L-060
Contextual Info: SECOND GENERATION IGBT 600 VOLT, F-SERIES MODULES, PT TECHNOLOGY • Low saturation voltage Device Type DUALS 2MBI50F-060 2MBI75F-060 2MBI100F-060 2MBI150F-060 2MBI200F-060 2MBI300F-060 SINGLES V c es lc Pc VcE sat PerlGBT Volts Cont. Amps Watts Max. Volts

2mb1200

Abstract: DIODE s3l 2MB1300 2mb1200l 2MB1200LB-060 1MB1300L-060 1mb1400l-060 1MBI50L-060 2MB1100L-060 2MBI50L-060
Contextual Info: m 2 E 3 & 7 oooa'ì'ì? 513 IGBT • 600 VOLT, F-SERIES MODULES • Low saturation voltage Device Pc VcE sat R th RTH VF W Per IGBT Max. lc ton toff tf IGBT Diòde Max. Max. Am ps W atts V olts Am ps jjse c. usee. usee. °C/W °C/W Volts usee. 600 600 600

IGBT cross reference semikron eupec

Abstract: 150Ne120 FZ800R16KF4 MG200J2YS50 mitsubishi IGBT cross reference semikron Eupec Power Semiconductors IGBT mitsubishi mg300j2ys50 MBM200GS12 FZ1600R12KF4 MG200Q2YS40
Contextual Info: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130

M217

Contextual Info: IGBT 600 VOLT, F-SERIES MODULES • Low saturation voltage Vces . DUALS 2MBI50F-060 2MBI75F-060 2MBI100F-060 2MBI150F-060 2MBI200F-060 2MBI300F-060 SINGLES 1MBI300F-060 1MBI400F-060 :ic ; VcE sat VGe = 15V Switching Time (Max.) Max. lc ton . :iott;!."" tr.

1MBI400F-060

Abstract: M116
Contextual Info: 1MBI400F-060 400A IGBT Module 600V / 400A 1 in one-package 外形寸法 Outline Drawings 特長 ：Features 特長： 低飽和電圧 Low Saturation Voltage 電圧駆動(MOSｹﾞｰﾄ構造）Voltage Drive 豊富な容量系列 Variety of Power Capacity Series

DIODE A112

Abstract: AARI AETA
Contextual Info: 1MBI400F-060 400A IG B T : Outline Drawings IGBT MODULE i Features • fëfi&inÇÆ Low Saturation Voltage • «Œ SEB ( M O S * - h f t & j Voltage Drive Variety of Power Capacity Series : A p p lica tio n s • * - ? - * m m * > '< — 9 • A C , DCt#-—# 7 > ~ f

IGBT cross reference semikron eupec

Abstract: IGBT cross reference semikron 2MBI 200NB-120 IGBT Eupec 150Ne120 MG200J2YS50 mitsubishi MG100Q2YS51 MG400Q1US41 igbt mitsubishi FZ800R16KF4 MG200Q2YS40
Contextual Info: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130

1MBI300SA-120

Abstract: 1MBI400JN-120-01 1MBI300JN-140 1MBI400JN-120 1MBI300SA120 1mbi400jn120 M237 1MBI200S-120 1MBI300JN120 1MBI30L-060
Contextual Info: Fuji Semiconductor Inc. Product Search Fuji Semiconductor, Inc. is dedicated to provide Quality Products with Superior Customer Service. Our extensive product line includes: Power Management ICs, Sensor ICs, and Driver ICs CMOS MOSFET and Smart MOSFET IGBT (Modules

Scans-00936

Abstract: M116 A114 es 1MBI400F-060 Diod 0185 H125
Contextual Info: 1 M B I4 0 0 F -0 6 0 4 0 0 A «± IGBT IG B T M O D U L E : F e a tu r e s • Low Saturation Voltage • W E E tt ( M O S * - M liS ) • Voltage Drive Variety of Power Capacity Series : A p p lic a t io n s >'< —9 Inverter for M otor Drive • AC, DC11 —# 7 > ~ 7 AC*DC Servo Drive Amplifier

4cx 2500

Abstract: arc igbt INVERTER ARC WELDING H111C1 diode T-71 F760 STZN 1MBI400F-060 M116 T151
Contextual Info: 1MBI400F-060 400A IGBT : Outline Drawings IGBT MODULE |- 24 .8 . ]• 20 ■|A 29 -| 4 - * 6 .5 ± 0 ,l _ I6 ._ 3 _ ._ 1 6 _ /T ftm Features • te s a fn m E L ow S a tu ra tio n V o lta g e • ^ E S E f t ( M O S - y — H U iS ) • V o lta g e Drive

1MBH65-090

Abstract: 1mbh60-090 2MBI50N-120 6MBI50FA-060 6MBI50L-120 2MBI75F-060 6MBI10L-060 1mbh 2mbi200f 2mbi25f
Contextual Info: IGBT MODULES Ratings and Specifications Alphanumerical index Type Page G roi No. ER ERD60-100 ERD65-090 40 40 Page G rou p No. 1 1 2M 2MBI25F-120 2MBI25L-120 43 41 8 4 2MBI50F-060 2MBI50F-120 2MBI50L-060 2MBI50L-120 2MBI50N-060 2MBI50N-120 42 43 40 41 44 44

1mb12-140

Abstract: 1MBI30L-060 2MBI100L-060 1mb12 IGBT 1MBH60-100 1MBI30L060 m-219 2MBI100F-060 1mbh collmer igbt
Contextual Info: IGBT DISCRETE T0-3PL, T0-3PF & BBT PACKAGE Device V ces V ce sat V qe=15V Pkg. Switching time (Max.) lc PC cont. Par IGBT Max. lc ton V ges type toff tf Volts Volts Amps. Watts Volts Amps. H sec. 1MB12-140 1400 ±20 12 100 6.0 12 - 1.2 1.0 T03P F - sec.