1M X 16BIT X 4 BANKS SYNCHRONOUS DRAM Search Results

K4S641632C

Abstract: circuit diagram for auto on off
Contextual Info: K4S641632C CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.0 Jun. 1999 K4S641632C CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM

K4S641632E-TC75

Contextual Info: K4S641632E CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.2 Sept. 2001 K4S641632E CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM

K4S64163

Abstract: K4S641632E
Contextual Info: K4S641632E CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Oct. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.0 Oct. 2000 K4S641632E CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM

Contextual Info: K4S641632E CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Dec. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.0 Dec. 2000 K4S641632E CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM

Contextual Info: K4S641632D CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Jun. 1999 K4S641632D CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM

KM416S4031BT-G8

Contextual Info: KM416S4031B CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM with SSTL interface FEATURES GENERAL DESCRIPTION •JEDEC standard 3.3V power supply •SSTL_3 Class II compatible with multiplexed address •Four banks operation •MRS cycle with address key programs

K4S641632C

Abstract: 54TSOP2 54-TSOP2-400AF
Contextual Info: K4S641632C CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The K4S641632C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS

Contextual Info: Preliminary CMOS SDRAM KM416S4030C 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM416S403OC is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG'S high performance CMOS

HY5DV651622

Contextual Info: HY5DV651622 4 Banks x 1M x 16Bit DOUBLE DATA RATE SDRAM DESCRIPTION The Hyundai HY5DV651622 is a 67,108,864-bit CMOS Double Data Rate DDR Synchronous DRAM, ideally suited for the point to point applications which require high bandwidth. HY5DV651622 is organized as 4 banks of

HY5DV651622

Contextual Info: HY5DV651622 4 Banks x 1M x 16Bit DOUBLE DATA RATE SDRAM DESCRIPTION The Hyundai HY5DV651622 is a 67,108,864-bit CMOS Double Data Rate DDR Synchronous DRAM, ideally suited for the point to point applications which require high bandwidth. HY5DV651622 is organized as 4 banks of

KM416S4031BT-G8

Abstract: KM416S4031BT-G7
Contextual Info: Preliminary CMOS SDRAM KM416S4031B 1M x 16Bit x 4 Banks Synchronous DRAM with SSTL interface FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply • SSTL_3 Class II compatible with multiplexed address • Four banks operation • MRS cycle with address key programs

KM416S4030A

Abstract: KM416S4030AT KM416S4030AT-G
Contextual Info: KM416S4030A CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES •• •• •• - GENERAL DESCRIPTION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs CAS Latency 2 & 3

km416s4031ct-g

Contextual Info: Preliminary CMOS SDRAM KM416S4031C 1M x 16Bit x 4 Banks Synchronous DRAM with SSTL interface FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply • SSTL_3 Class II compatible with multiplexed address • Four banks operation • MRS cycle with address key programs

KM416S4031C

Abstract: 1M x 16Bit x 4 Banks Synchronous DRAM km416s4031ct-g
Contextual Info: Preliminary CMOS SDRAM KM416S4031C 1M x 16Bit x 4 Banks Synchronous DRAM with SSTL interface FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply • SSTL_3 Class II compatible with multiplexed address • Four banks operation • MRS cycle with address key programs

HY57V651620B

Abstract: 10si
Contextual Info: HY57V651620B 4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V651620B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range. HY57V651620B is organized as 4banks of

Contextual Info: HY57V651620B 4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V651620B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V651620B is organized as 4banks of

TBS6416B4E-7G

Abstract: TBS6416B4E-7 54PIN TBS6416B4E 1M x 16Bit x 4 Banks Synchronous DRAM TwinMOS
Contextual Info: M.tec TBS6416B4E 1M x 16Bit x 4 Banks synchronous DRAM GENERAL DESCRIPTION The TBS6416B4E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with M’tec high performance CMOS technology. Synchronous design allows precise cycle control with the use of

TBS6416B4E-7G

Abstract: 54PIN TBS6416B4E cke02v TBS6416B4E-7
Contextual Info: M.tec TBS6416B4E 1M x 16Bit x 4 Banks synchronous DRAM GENERAL DESCRIPTION The TBS6416B4E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with M’tec high performance CMOS technology. Synchronous design allows precise cycle control with the use of

TBS6416B4E-7

Abstract: TBS6416B4E-6 TBS6416B4E-6E TBS6416B4E M.tec M-tec tbs6416
Contextual Info: M.tec TBS6416B4E 1M x 16Bit x 4 Banks synchronous DRAM GENERAL DESCRIPTION The TBS6416B4E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with M’tec high performance CMOS technology. Synchronous design allows precise cycle control with the use of

HY5DV651622

Abstract: HY*651622
Contextual Info: HY5DV651622 4 Banks x 1M x 16Bit DOUBLE DATA RATE SDRAM DESCRIPTION The Hynix HY5DV651622 is a 67,108,864-bit CMOS Double Data Rate DDR Synchronous DRAM, ideally suited for the point to point applications which require high bandwidth. HY5DV651622 is organized as 4 banks of 1,048,576x16.

HY5DV651622

Abstract: HY5DV651622TC
Contextual Info: HY5DV651622 4 Banks x 1M x 16Bit DOUBLE DATA RATE SDRAM PRELIMINARY DESCRIPTION The Hyundai HY5DV651622 is a 67,108,864-bit CMOS Double Data Rate DDR Synchronous DRAM, ideally suited for the point to point applications which require high bandwidth. HY5DV651622 is organized as 4 banks of

HY5DV651622TC-G55

Abstract: HY5DV651622 HY5DV651622TC
Contextual Info: HY5DV651622T 4 Banks x 1M x 16Bit DOUBLE DATA RATE SDRAM DESCRIPTION The Hynix HY5DV651622 is a 67,108,864-bit CMOS Double Data Rate DDR Synchronous DRAM, ideally suited for the point to point applications which require high bandwidth. HY5DV651622 is organized as 4 banks of 1,048,576x16.

HY57V641620HG

Abstract: HY57V641620HGLT-H HY57V641620HGLT-K HY57V641620HGT-8 HY57V641620HGT-H HY57V641620HGT-K HY57V641620HGT-P HY57V641620HGT-S
Contextual Info: HY57V641620HG 4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576x16.

HY57V641620HG

Abstract: HY57V651620B HY57V651620BLTC-55 HY57V651620BTC-10 HY57V651620BTC-10P HY57V651620BTC-10S HY57V651620BTC-55 HY57V651620BTC-6 HY57V651620BTC-7 HY57V651620BTC-75
Contextual Info: HY57V651620B 4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576x16.