1N446-49
Abstract: DIODE LN4148 1N4154 1N4531 1N4536 1N914 1N916
Contextual Info: 1N4536 1N914, A, B 1N4154 1N916, A, B 1IM4148, 49 1l\l446-49 1N4531 AM BIEN T T E M P E R A T U R E - T &- D E G R E E S CEN TIG R A D E t/T Figure 9 Figure 10 ESTIMATION OF REVERSE RECOVERY TIME UNDER VARIOUS DRIVE CONDITIONS The reverse recovery tim e of a silicon signal
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1n9141n41541n45361n916+41n446-491im41481n4531diode ln4148
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HP5082-4203
Abstract: RIAA phono pre-amp Amplifier With Active Output Clipping hp 6n136 tape head preamplifier piezoelectric transducer amplifier design th instrumentation amplifier with bridge Wien Bridge Oscillator AGC IC OP AMP for piezoelectric microphone Wien Bridge Oscillator AGC two diodes
Contextual Info: AN-106 APPLICATION NOTE ANALOG ► DEVICES ONE TECHNOLOGY WAY • P.O. BOX 9106 • NORWOOD, MASSACHUSETTS 02062-9106 • 617/329-4700 A Collection of A m p Applications by James Wong This note examines some of the numerous and widely-used applications of the operational amplifier. While not attempting
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an-106200maop-421hp5082-4203+9riaa phono pre-ampamplifier with active output clippinghp 6n136tape head preamplifierpiezoelectric transducer amplifierdesign th instrumentation amplifier with bridgewien bridge oscillator agcic op amp for piezoelectric microphonewien bridge oscillator agc two diodes
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DIODe IN4446
Abstract: in4447 in4449 IN4I48 1n914 equivalent in4448 JANTX 1N916 1n916 equivalent IN4446 1N916 JANTX
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Part N u m b e r BV @ 100/1A M in . V I r @ 2 5 ° C M ax. (ri A ) @ V r (V ) V f (V ) M ax. @ I f (m A ) Co @ DV (pf) 1N 914 100 25 30 1.00 10 4 1N 914A 100 25 20 1.00 20 4 1N 914B 100 25 20 1.00 100 1N 916 100 25 20
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100/1a1n9141n914a1n914b+161n9161n916a1n916b1n41481n41491n4151diode in4446in4447in4449in4i481n914 equivalentin4448jantx 1n9161n916 equivalentin44461n916 jantx
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FD6666 diode
Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5
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a4/10a5/62a5/105a1000+16aa100aa110aa111aa112aa113aa114fd6666 diodediode by1001n4q07ba100 diodeby164bb139bay38diode aa1191s184 diode1n82
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749 MOSFET TRANSISTOR motorola
Abstract: RF154 dss125
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M RF154 The RF MOSFET Line RF P o w e r Field E ffe ct T ra n sisto r N-Channel Enhancement-Mode MOSFET 600 W, 50 V. 80 MHz N-CHANNEL BROADBAND RF POWER MOSFET . . . designed prim arily for linear large*signal output stages in the 2-100 MHz frequency range.
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rf154749 mosfet transistor motoroladss125 |
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