1F20 Search Results

Photo Flash Rectifiers

Abstract: 1F10-1F20
Contextual Info: 1F10-1F20 Photo Flash Rectifiers VOLTAGE RANGE: 1000 - 2000 V CURRENT: 0.5 A Features R-1 Fast switching Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with alcohol,Isopropanol and similar solvents Mechanical Data

DIODE S4 66

Abstract: diode 2U 66 1FL20U D1FS4 DIODE S4 74
Contextual Info: K iF § y Diode, “ I F T y p e ” C a s e e /3 c o — ^— v 2 \ y I <h à ! ì } W D a te code i‘i,',ft, 7 y X m S / / j T y p e No., C la s s r L - : , 1. 21|0 3 Type No. Item A. ta 'Æ « « V rm [V ] D 1F20 D 1F40 D 1F60 D 1FS4 D 1FL40 D 1FL20U

S 3590A

Abstract: AT49BV163D AT49BV163DT AT49BV163DT-70TU
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Fast Read Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout

1MBH20D-060-S06TT

Contextual Info: M e ssrs. R o ckw eil Autom ation C o .Ltd. SPECIFICATION IG BT o! nny o use property lliu lliv for ¡5 h«ruin n ui l f i e r s o i'v c r wliM fie s f in i i June-11-1998 Date w»y ¡ n í o r ru n I i on M S5F-4086 uny They : No. lu Un* nrid Spec. i l rs<:U>svO

SM59128

Abstract: SM59128C40 SPWM IC spwm sm591 BRM20 SPWM circuit diagram
Contextual Info: SyncMOS Technologies International, Inc. SM59128 8-Bits Micro-controller Embedded 128KB flash & 1KB RAM & IIC & SPWM Product List Features SM59128C25, 25MHz 128KB internal flash MCU SM59128C40, 40MHz 128KB internal flash MCU z z z z Description z The SM59128 series product is an 8-bit single chip

iSO 15765

Contextual Info: ELM329 CAN Interpreter Description Features Since 1996, most vehicles have been required to monitor their own emissions performance and to report on it through an On-Board Diagnostics OBD port. Initially, several different protocols were used for the transfer of OBD data, but since the 2008

ba37

Abstract: 48FBGA K8D1716U K8D1716UBC K8D1716UTC samsung nor flash BA251
Contextual Info: K8D1716UTC / K8D1716UBC FLASH MEMORY Document Title 16M Bit 2M x8/1M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft July 25, 2004 Advance 0.1 Support 48TSOP1 Lead Free Package Sep 16, 2004 Preliminary

AT26DF161A-SSU

Abstract: AT26DF161A AT26DF161A-MU AT26DF161A-SU
Contextual Info: Features • Single 2.7V - 3.6V Supply • Serial Peripheral Interface SPI Compatible – Supports SPI Modes 0 and 3 • 70 MHz Maximum Clock Frequency • Flexible, Uniform Erase Architecture • • • • • • • • • • – 4-Kbyte Blocks – 32-Kbyte Blocks

Contextual Info: A M D il ADVANCE INFORM ATIO N M i i .i i n - i i i i n i i in.i i i « Am29DL162C/Am29DL163C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS A R C H ITEC TU R A L AD VA N TA G ES

BGA-56P-M01

Abstract: DS05-50216-1E
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50216-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x 8/×16) FLASH MEMORY & 2M (× 8/×16) STATIC RAM MB84VD2108XEA-70/85/MB84VD2109XEA-70/85 • FEATURES • Power Supply Voltage of 2.7 to 3.3 V

Contextual Info: Features • 2.7V to 3.3V Read/Write • Access Time - 90 ns • Sector Erase Architecture - Thirty 32K Word 64K Byte Sectors with Individual Write Lockout - Eight 4K Word (8K Byte) Sectors with Individual Write Lockout - Two 16K Word (32K Byte) Sectors with Individual Write Lockout

Contextual Info: Features • 4.5V to 5.5V Read/Write • Access Time - 70 ns • Sector Erase Architecture - Thirty 32K Word 64K byte Sectors with Individual Write Lockout - Eight 4K Word (8K byte) Sectors with Individual Write Lockout - Two 16K Word (32K byte) Sectors with Individual Write Lockout

mt 1389 de

Abstract: MLC 8050 Transistor mlc 8050 IC01 -P10 Replace philips tea 1090 8*8 led dot MATRIX Driver i2c tea 1601 t MDT 1692 LT 542 seven segment display data sheet mt 1389
Contextual Info: REJ09B0360-0100 32 SH7764 Group Hardware Manual Renesas 32-Bit RISC Microcomputer SuperHTM RISC Engine Family SH-4A Series SH77641 SH77640 Rev.1.00 Revision Date: Nov. 22, 2007 R5S77641 R5S77640 Rev. 1.00 Nov. 22, 2007 Page ii of lvi Notes regarding these materials

DL161

Abstract: DL162 DL163
Contextual Info: Am29DL16xD 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations — Data can be continuously read from one bank while

mt 1389 de

Abstract: 1838 b infrared Schematics AL 1450 DV stc 1740 relay ras 1210 1838 t infrared cd 1619 CP bt 1690 scr pin diagram for IC cd 1619 cr tea 1601
Contextual Info: REJ09B0256-0100 32 SH7763 Hardware Manual Renesas 32-Bit RISC Microcomputer SuperHTM RISC Engine Family SH-4A Series R5S77630 Rev.1.00 Revision Date: Oct. 01, 2007 Rev. 1.00 Oct. 01, 2007 Page ii of lxvi Notes regarding these materials 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate

M410000002

Abstract: DL161 DL162 DL163 m410000009 AM29DL164DT
Contextual Info: Am41DL16x4D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

DL161

Abstract: DL162 DL163 AM29DL164DT M4200
Contextual Info: Am42DL16x2D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

DS42546

Contextual Info: DS42546 Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL163D Top Boot 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/ 256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS

ks108 lcd

Abstract: ks108 k2255 ks107 lcd ks107 1F52 65C02 novatek driver 1F24 15625-Hz
Contextual Info:

SH58216 Audio Micro-controller with LCD interfaces Preliminary Features „ „ „ „ „ „ „ „ „ „ „ „ „ 65C02-based single chip 8 bit micro-controller Operation voltage:2.2V~3.5V Dual oscillation circuits: System oscillator RC or Crystal Mode selected by pad option

AT49BV1604

Abstract: AT49BV16X4 AT49F1604 AT49F1604T AT49F1614 AT49F1614T
Contextual Info: Features • 4.5V to 5.5V Read/Write • Access Time - 70 ns • Sector Erase Architecture • • • • • • • • • • – Thirty 32K Word 64K byte Sectors with Individual Write Lockout – Eight 4K Word (8K byte) Sectors with Individual Write Lockout

cal e6c

Abstract: IC free bu 2508 af equivalent cx 2601 SF.C 2805 EC norma installation tester xe 2sa 5200 power amp EM3870 relay TRK 1703 YE EI- 33C
Contextual Info: M6SMD0S3 D2 > JUNE 1979 E XO Rdisk I I/I11 Operating S y s t e m User's Guide The i n format ion in this document has been careful ly checked; and is believed to be entirely reliable. No res^tonsibi1ity> however, is assumed for inaccuracies. Furthermore,

SA452

Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
Contextual Info: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this

SA30* diode

Abstract: FPT-48P-M19 FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation MBM29DL16XTE/BE70/90 • FEATURES • 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes

JS28F512M29

Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers