1E19 Search Results

in4577

Abstract: CLM2950 CLM2950ACN-X CLM2950CN-X CLM2951 CLM2951ACP-X CLM2951ACS-X CLM2951CP-X CLM2951CS-X
Contextual Info: 150mA Low Dropout Voltage Regulators CORPORATION CLM2950 / CLM2951 FEATURES • 5V, 3.3V, and 3.0V Versions at 150mA Output • Very Low Quiescent Current Dropout Voltage • Low • Extremely Tight Load and Line Regulation • Very Low Temperature Coefficient

iih22

Abstract: ali 3328 N208 transistors E7138 Schematic diagram of DRO lt 175 1111 h3 0926 VS-22 E49-1 cd 208 PIR
Contextual Info: MIL-M-38510/137A 17 September 1986 SUPERSEDING MI L - M - 3 8 5 1 0 / 1 3 7 18 M a r c h 1 9 8 5 MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, VOLTAGE OUTPUT 12-BIT DIGITAL-TO-ANALOG CONVERTERS, HY3RIO AND MONOLITHIC SILICON This specification ments and A g e n c i e s

4202 BD TRANSISTOR

Abstract: 4202 BD TRANSISTOR parameter BV 501 TGF4230 TGF4230-EEU bond wire gold
Contextual Info: T R I Q U I N T S E M TGF4230-EEU I C O N D U C 1.2mm Discrete HFET ● ● ● ● ● ● 1200 µm X 0.5 µm HFET T O R , I N C . 4230 Nominal Pout of 28.5- dBm at 8.5- GHz Nominal Gain of 10.0- dB at 8.5- GHz Nominal PAE of 55% at 8.5 - GHz Suitable for High-Reliability Applications

VP 1176 datasheet

Abstract: LD 757 ps TGF4250-EEU 3 DG 1008
Contextual Info: T R I Q U I N T S E M TGF4250-EEU I C O N D U C 4.8 mm Discr ete HFET ● ● ● ● ● ● 4800 µm x 0.5 µm HFET T O R , I N C . 4250 Nominal Pout of 34- dBm at 8.5- GHz Nominal Gain of 8.5- dB at 8.5- GHz Nominal PAE of 53% at 8.5 - GHz Suitable for high reliability applications

TGF4350-EPU

Contextual Info: TriQuint <+ Advance Product Information . SEMICONDUCTOR 300um Discrete pHEMT TGF4350-EPU Key Features and Performance 0.25um pHEMT Technology DC 22 GHz Frequency Range 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation Floating Source Configuration

TGF4350-EPU

Contextual Info: Advance Product Information May 15, 2001 300um Discrete pHEMT TGF4350-EPU Key Features and Performance • • • 0.25um pHEMT Technology DC 22 GHz Frequency Range 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation Floating Source Configuration Chip Dimensions 0.620 mm x

TGF4230-EEU

Contextual Info: Product Data Sheet March 20, 2001 Discrete HFET TGF4230-EEU Key Features and Performance • • • • • • 1200 µm x 0.5 µm HFET Nominal Pout of 28.5 dBm at 8.5 GHz Nominal Gain of 10.0 dB at 8.5 GHz Nominal PAE of 55 % at 8.5 GHz Suitable for high reliability applications

47-2001

Abstract: ANG-S21 TGF4124-EPU
Contextual Info:  4124 TGF4124-EPU • • • • • 24 mm Discrete HFET 0.5 um gate finger length Nominal Pout of 12 Watts at 2.3 GHz Nominal PAE of 51.5% at 2.3 GHz Nominal Gain of 10.8 dB at 2.3 GHz Die size 36.0 x 81.0 x 4.0 mils 0.914 x 2.057 x 0.102 mm TGF4124-EPU RF Performance at F = 2.3 GHz

Contextual Info: Advance Product Information SEMICONDUCTOR, 300um Discrete pHEMT TGF4350-EPU Key Features and Performance 0.25um pHEMT Technology DC 22 GHz Frequency Range 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation Floating Source Configuration Chip Dimensions 0.457 mm x

Contextual Info: TGF4118-EPU 18 mm Discrete HFET 4118 0.5 um gate finger length Nominal Pout of 9.0 Watts at 2.3 GHz Nominal PAE of 53% at 2.3 GHz Nominal Gain of 11.5 dB at 2.3 GHz Die Size 36.0 x 81.0 x 4.0 mils 0.914 x 2.057 x 0.102 mm TGF4118-EPU RF Performance at F = 2.3 GHz

catv DISTRIBUTION NETWORK diagram

Abstract: resistor network 102J CATV DISTRIBUTION NETWORK SMP1307-027 IS catv ics PN junction diode data sheet in mil grade Voltage Variable Attenuators 3 db attenuator sma end Microwave PIN diode spice PIN diode SPICE model skyworks smp1307
Contextual Info: Application Note A Wideband CATV Attenuator Introduction PI Attenuator Fundamentals In cable TV line amplifiers and set-top applications, a variable attenuator is used in front of an LNA as an AGC. Figure 1 shows a block diagram of a typical transceiver used in a set-top box.

Contextual Info: TGF4118 18 mm Discrete HFET August 5,2008 • • • • • ο4118 0.5 um gate finger length Nominal Pout of 9.0 Watts at 2.3 GHz Nominal PAE of 53% at 2.3 GHz Nominal Gain of 11.5 dB at 2.3 GHz Die Size 36.0 x 81.0 x 4.0 mils 0.914 x 2.057 x 0.102 mm

BV-1 501

Abstract: BF-960 spice model LT1715 spice model Transistor TT 2246 cd 6283 ic transistor KF 507 LT1716 spice model COMP1016 lt6234 spice model AUO-11307 R01
Contextual Info: linear.txt SPICE MODELS - LINEAR Technology Corp. LTC1150 * Version 2.0 Copyright Linear Technology Corp. 10/19/05. All rights reserved. * .SUBCKT LTC1150 3 2 7 4 6 ; +IN -IN V+ V- OUT * INPUT IB1 2 7 -10P IB2 3 7 10P RD1 4 80 2122.1 RD2 4 90 2122.1 M1 80 2 12 12 PM1

1E62H

Abstract: 1E4F 8XC196CB AN87C196CB 1E54H 1E7d 82527 as87c196cb board ccb2 nt 87C196CB
Contextual Info: 87C196CB Supplement to 8XC196NT User’s Manual CB_title.fm5 Page 1 Tuesday, September 15, 1998 9:54 AM 87C196CB Supplement to 8XC196NT User’s Manual September 1998 Order Number: 272787-002 CB_legal.fm5 Page 1 Tuesday, September 15, 1998 9:39 AM Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or

Contextual Info: 1 111111111111111 11111 1 111111111111111 1 111111111111111 1 111111111111111 1 1 123456789AB11CDEDFD1C111 111111111 1 11111111 1 11 D14F 123314567891A758BCD814E1F3D167D1F1C5A36 DE11D16A99  !"#$%&16A991' 4*+1(C1,FF1!"#1DDEDC

7BA4

Contextual Info: BENEFITS APPLICATIONS • • • • • • • • • • • • Hermetically sealed switch Contacts have no effect on their external environment Low space requirement Zero operating power required Fit and forget durability Reed Relays Security Limit Switching

Contextual Info: *51A38 >C9A5 *9C5 ?>C13C !+ I !>E5BC?AB I 'A5BB ?3D=5>C *51A38 I '13;175 *51A38 I '1A1=5CA93 *51A38 I A?BB 565A5>35 *51A38 I A55> )? * I 1<3D<1C?AB I +85A=1< 1C1 I )5<9129<9CG ?=5  'A?4D3CB  <?3; +9=9>7 5E935B  ' %?C52?; *5AE5A <?3;B  ) ! 1>4 ) !! D665AB  05A? 5<1G D665AB  '

B895

Abstract: A514 931C9
Contextual Info: *51A38 =C9A5 *9C5 >=C13C !+ I !=E5BC>AB I 'A5BB >3D<5=C *51A38 I '13:175 *51A38 I '1A1<5CA93 *51A38 I A>BB 565A5=35 *51A38 I A55= )> * I 1;3D;1C>AB I +85A<1; 1C1 I )5;9129;9CG ><5  'A>4D3CB      #+ D1;9CG I $9;9C1AG />D <1G 1;B> ;9:5 .* ( 3   

C81C

Contextual Info:     >=C13C !+ J !=E5BC>AB J 'A5BB 1;3D;1C>AB J A>BB 565A5=35 J A55= !=9C91C9E5 J $9;9C1AH J '1A1<5CA93 *51A38 J *51A38 2H '1AC %D<25A "5HF >A4 >3D<5=C A55= '2 A55 '13:175 ><5  'A>4D3CB  ;>3: +9<9=7 5E935B  ' %>C52>>: *5AE5A ;>3:B  ;>3: *H=C85B9I5A 2H 89?B5C -5=4>A  5B:C>? 89?B5CB  #')* 

B-895

Abstract: A514 B895 c85a
Contextual Info: *51A38 =C9A5 *9C5 >=C13C !+ I !=E5BC>AB I 'A5BB >3D<5=C *51A38 I '13:175 *51A38 I '1A1<5CA93 *51A38 I A>BB 565A5=35 *51A38 I A55= )> * I 1;3D;1C>AB I +85A<1; 1C1 I )5;9129;9CG ><5  'A>4D3CB       # D1;9CG I $9;9C1AG />D <1G 1;B> ;9:5

compal service manual

Abstract: M/1E54H 1E06H
Contextual Info: in tel. APPENDIX C REGISTERS This appendix provides reference information about the device registers. Table C-l lists the mod­ ules and major components of the device with their related configuration and status registers. Ta­ ble C-2 lists the registers, arranged alphabetically by mnemonic, along with their names,

Contextual Info: Advance Product Information April 16, 2001 300um Discrete pHEMT TGF4350-EPU Key Features and Performance • • • 0.25um pHEMT Technology DC 22 GHz Frequency Range 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation Floating Source Configuration

Contextual Info: TGF4124-EPU 4124 24 mm Discrete HFET • 0.5 um gate finger length • Nominal Pout of 12 Watts at 2.3 GHz • Nominal PAE of 51.5% at 2.3 GHz • Nominal Gain of 10.8 dB at 2.3 GHz • Die size 36.0 x 81.0 x 4.0 mils 0.914 x 2.057 x 0.102 mm TGF4124-EPU RF Performance at F = 2.3 GHz

Contextual Info: T R I Q U I N T S E M I C O N D U C T O R , TO 1.2mm Discrete HFET TGF4230-EEU # 1200 im X 0.5 (im HFET Nominal Pout of 28.5-dBm at 8.5-GHz Nominal Gain of 10.0-dB at 8.5-GHz # Nominal PAE of 55% at 8.5-GHz I N C 4230 O Suitable for High-Reliability Applications