1D50 Search Results

Contextual Info: L0BE8E070D,0 >@ED0D?0$FABFF9 AFB L0$9 0BDD0 8?3;01>40,92B1D9?> L01C50@<1D50?<54 L0E<<0&?G5B01D005BAAK021C50@<1D5 L09F50/51B0-1BB1>DI '80#1+'30')-'.32020E00,*%#3*/.2 19<G1I0@@<931D9?>C )E9D12<506?B021DD5BI0@?G5B540B19<G1I0CICD5=C &?G5B0&<1>DC

6DI15S-050

Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Contextual Info: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140

1D500A-030

Contextual Info: 1D500A-030 500a E ± /< 7 — —Jls /< 7 ~ : Outline Drawings POWER TRANSISTOR M ODULE fiQvfl U : F e a tu re s • U 22-5 High Current • hFEA'fgjv.' High DC Current Gain Non Insulated Type 6-MJ • # ! i £ ; A p p lic a tio n s v T -y ? ' we ra te n d ;

1D500A-030

Abstract: transistor f151 T151 T810 T930 1D500A030 1D500A030 equivalent
Contextual Info: 1D500A-030 500A L -;U Ä ± / < 7 — :E ÿ a - l£ f JV ! Outline D rawings POWER TRANSISTOR MODULE 14 U 22.5 : F e a tu re s • • hFE High Current High DC Current Gain •im m m Non Insulated Type ‘ Applications High Power Switching •M&WWM&W Uninterruptible Power Supply

1D500A-030

Contextual Info: 1D500A-030 500A L -;U Ä ± / < 7 — :E ÿ a - l£ f JV ! Outline D rawings POWER TRANSISTOR MODULE 14 U 22.5 : F e a tu re s • High Current • hFE High DC Current Gain • im m m Non Insulated Type ‘ Applications High Power Sw itching •M&WWM&W • DC * —fU ffl

transistor

Abstract: 1D500A-030 M6 transistor 1D500A030 1D500A030 equivalent D 400 transistor high power transistor module high dc current gain transistor transistor M6 switching power supply schematic fuji
Contextual Info: 1D500A-030 500A FUJI POWER TRANSISTOR MODULE パワートランジスタモジュール POWER TRANSISTOR MODULE 外形寸法 : Outline Drawings 外形寸法: 特長 ：Features 特長： 大電流 大電流 High current が高い High DC Current Gain

2SC2770

Abstract: 1D500A-030 1D500A030 ET127 ET1257 ETN31-055 ETM36-030 1D200A-020 ET188 ETN01-055
Contextual Info: jl2j Building block transistors • Suitable for motor control applications. • High voltage, large current capacity pevice ppe ET188 ET127 2SC 2770 ETN01-055 ETN 31-055 ETM36-030 ETN36-030 ET1257 1D200A-020 1D500A-030 Ic cont. amps. V cbo V ceo V ceo volts

1D500A-030

Abstract: transistor transistor Ic 1A
Contextual Info: 1D500A-030 500A FUJI POWER TRANSISTOR MODULE パワートランジスタモジュール POWER TRANSISTOR MODULE 外形寸法 : Outline Drawings 外形寸法: 特長 ：Features 特長： 大電流 大電流 High current が高い High DC Current Gain

in4577

Abstract: CLM2950 CLM2950ACN-X CLM2950CN-X CLM2951 CLM2951ACP-X CLM2951ACS-X CLM2951CP-X CLM2951CS-X
Contextual Info: 150mA Low Dropout Voltage Regulators CORPORATION CLM2950 / CLM2951 FEATURES • 5V, 3.3V, and 3.0V Versions at 150mA Output • Very Low Quiescent Current Dropout Voltage • Low • Extremely Tight Load and Line Regulation • Very Low Temperature Coefficient

Contextual Info: UL-Series - UL489 Miniature Molded Case Circuit Breaker - 1 pole D-Trip - DC Standard Pack: 12 Weight: 0.3-32A: 1.74kg 3.83lb. 40-63A: 1.98kg (4.37lb.) Calibration Temperature 40ºC (104ºF) Ambient Temperature -25ºC to +55ºC (-13ºF to 131ºF ) Storage Temperature

D-Trip

Contextual Info: V-EA-Series - UL508 Manual Motor Controller - 1 pole D-Trip One Pole 35 mm 1.38 in. 93.3 mm (3.67 in.) 74.7 mm (2.94 in.) 17.5 mm (0.69 in.) Voltage Rating Short Circuit Withstand Rating (UL/CSA - Ratings) Group Short Circuit Withstand Rating (UL/CSA - Ratings)

SA452

Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
Contextual Info: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this

JS28F512M29

Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

Contextual Info: PowerTech BIG IDEAS IN • rn t BK! POWER’ 150 AMPERE TRANSISTOR PT-2523 PT-2524 FEATURES PT2S23 400V 450V . V,wo V.' l P T-S 5Ï4 . . -1501.' ‘J r- o . i= t t j ai , - 500V V, K- . I. U Po 'V 1 1 ! 0V . . IOGA 150A . . . S2SW ~ t ~ I.0O - 1

asme SA388

Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
Contextual Info: S29GL-M MirrorBitTM フラッシュファミリ S29GL256M，S29GL128M，S29GL064M，S29GL032M 256M ビット，128M ビット，64M ビット，および 32M ビット， 3.0V 単一電源，ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ

120R

Abstract: C8800
Contextual Info: Am29LV2562M Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

l256mh113

Abstract: L256ML123R
Contextual Info: Am29LV256M Data Sheet September 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

Contextual Info: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology S29GL-N Cover Sheet Data Sheet This product family has been retired and is not recommended for designs. For new and current designs,

top side a4 marking

Abstract: 23C00 100FE 1D803 24C01 MARKING 1C202 1C801 11801 23C01 1D002
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

L256MH113R

Abstract: L256ML113R
Contextual Info: Am29LV256M Data Sheet -XO\  7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG

Contextual Info: S29NS-P MirrorBit Flash Family S29NS512P, S29NS256P, S29NS128P 512/256/128 Mb 32/16/8 M x 16 bit , 1.8V Burst Simultaneous Read/Write, Multiplexed MirrorBit Flash Memory Data Sheet S29NS-P MirrorBit® Flash Family Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

a22t

Abstract: S19G S29GL-N
Contextual Info: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: This document states the current technical specifications

S29GL-N

Abstract: 1E300
Contextual Info: S29GL512/256/128N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this

CORE i3 ARCHITECTURE

Abstract: Cpu Core i7 1186D core i3 core i7 alu I3 CPU IA15 S1C63000 jrc 1001b x0s7
Contextual Info: MF855-03a CMOS 4-BIT SINGLE CHIP MICROCOMPUTER S1C63000 Core CPU Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any