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    1C01V Price and Stock

    OMRON Industrial Automation

    OMRON Industrial Automation SRM1C01V1

    COMPOBUS/S MASTER BAT.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Master Electronics SRM1C01V1
    • 1 $573.27
    • 10 $573.27
    • 100 $573.27
    • 1000 $573.27
    • 10000 $573.27
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    1C01V Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BUK455-600B

    Abstract: LG 631
    Contextual Info: PHILIPS bSE J> INTERNATIONAL m 711Gfl2b 0Db4101 Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		711gfl2b0db4101buk455-600bpinning-t0220ab+1lg 631 PDF

    Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BUK637-400B Fast recovery diode FET_ _ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor In a plastic envelope. FREDFET with fast recovery


    OCR Scan     		buk637-400b PDF

    BUK455-600B

    Abstract: transistor buk455 Philips 34D
    Contextual Info: PHILIPS INTERN ATI ONAL bSE D m 711GÛ2b 0Db4101 7T5 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		0db4101buk455-600b-t0220ab711dfl2b+2transistor buk455philips 34d PDF

    BU2530AW

    Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2530AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.


    OCR Scan     		bu2530aw1c01v PDF

    Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		buk438-800a/bbuk438-800a-800b PDF

    BUK657-400B

    Contextual Info: PHILIPS INTERNATIONAL bSE D m 711035b 00b43Sl 3 55 • PHIN Philips Semiconductors Product Specification PowerMOS transistor BUK657-400B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


    OCR Scan     		711035b00b43slbuk657-400b-t0220ab PDF