1B SMD TRANSISTOR Search Results

transistor smd marking PE

Abstract: SMD TRANSISTOR MARKING 1D transistor smd marking PE 1b
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC846W , 847W, 848W SOT-323 Formed SMD Package NPN Marking BC846W =1D BC847AW =1E BC846AW =1A BC847BW =1F BC846BW =1B BC847CW =1G

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC846 BC847 BC848 SILICON PLANAR EPITAXIAL TRANSISTORS General purpose N–P–N transistors Marking BC846 = 1D BC846A = 1A BC846B = 1B BC847 = 1H

smd TRANSISTOR 1D

Abstract: SMD TRANSISTOR MARKING 1D SMD TRANSISTOR MARKING 1F smd transistor 1g SMD TRANSISTOR MARKING 1B transistor smd 1E ts 4141 TRANSISTOR smd 1D smd transistor TRANSISTOR smd 1D smd transistor marking 1h
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC846W , 847W, 848W SOT-323 Formed SMD Package NPN Marking BC846W =1D BC847AW =1E BC846AW =1A BC847BW =1F BC846BW =1B BC847CW =1G

Contextual Info: Transistors IC SMD Type Product specification KDD6030L @ VGS = 4.5 V +0.2 9.70-0.2 +0.1 0.80-0.1 Fast switching speed High performance trench technology for extremely low RDS ON 2.3 +0.1 0.60-0.1 0.127 max 3.80 RDS(ON) = 21m Low gate charge +0.8 0.50-0.7

1b.1 smd transistor

Abstract: 1b smd transistor smd diode JC 7 SMD Transistor nc KDD6030L
Contextual Info: Transistors IC SMD Type 30V N-Channel Power Trench MOSFET KDD6030L @ VGS = 4.5 V +0.2 9.70-0.2 +0.1 0.80-0.1 Fast switching speed High performance trench technology for extremely low RDS ON 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 0.127 max 3.80 RDS(ON) = 21m Low gate charge

Contextual Info: Transistors IC Transistors Diodes SMD Type SMD Type Product specification KC846A,B/KC847A,B,C/KC848A,B,C BC846A,B/BC847A,B,C/BC848A,B,C SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Ideally suited for automatic insertion 0.4

Contextual Info: Te m ic BUD600 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • S im p le-sW itch-O ff T ransistor SW O T • • HIGH SPEED technology • Very low dynam ic saturation Very low operating tem perature • Planarpassivation

mk06u

Abstract: dil reedrelais KEMA 03 ATEX 2042U relais bistabil smd M21 RM05-4-BV10500 mk08 OPTOKOPPLER PTB 06 ATEX 2042U smd 1C
Contextual Info: PRODUKTÜBERSICHT Reed Relais • Reed Sensoren · Reed Schalter www.meder.com AUSWAHLHILFE MEDER electronic Auswahlhilfe Im folgenden Abschnitt stellen wir unsere Standard-Reedprodukte und ihre Spezifikationen in Übersichtsform dar. Diese Produkte repräsentieren nur einen kleinen Teil des

transistor smd 1E

Abstract: SMD Transistor 1f TRANSISTOR SMD MARKING CODE 1l TRANSISTOR SMD MARKING CODE 1a SMD transistor 1L 1b smd transistor smd transistor marking 1B SMD TRANSISTOR MARKING 1F transistor SMD 520 MARKING SMD npn TRANSISTOR 1a
Contextual Info: SMD General Purpose Transistor NPN BC846/BC847/BC848 SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data SOT-23 SOT-23, Plastic Package Case: Solderable per MIL-STD-202G, Method 208

Transistors smd 1G

Abstract: SMD TRANSISTOR MARKING 1B smd transistor marking 1j SMD TRANSISTOR MARKING 1F SMD Transistor 1f marking 1A smd transistor 1l smd transistor marking 1L 1F transistor smd MARKING SMD TRANSISTOR 1j
Contextual Info: Transistors SMD Type NPN Transistor KC846A,B/KC847A,B,C/KC848A,B,C BC846A,B/BC847A,B,C/BC848A,B,C SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Ideally suited for automatic insertion 0.4 3 1 0.55 For Switching and AF Amplifier Applications

NXP date code marking

Abstract: marking 1B marking code v6 SOT23 NXP MARKING SMD IC CODE PMBT2222 SOT23 NXP power dissipation TO-236AB MARKING CODE SMD IC PMBT2222A,215 smd code marking .1p PMBT2222A
Contextual Info: PMBT2222; PMBT2222A NPN switching transistors Rev. 6 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description NPN switching transistors in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package. Table 1. Product overview

smd transistor marking 1B

Abstract: SMD TRANSISTOR MARKING 1F smd TRANSISTOR 1D SMD TRANSISTOR MARKING 1M smd transistor marking 1E SMD Transistor 1f SMD TRANSISTOR MARKING 1D smd 1G SMD transistor MARKING 65 smd transistor 1g
Contextual Info: Transistors IC SMD Type NPN General Purpose Transistor BC846W,BC847W,BC848W Features Low current max. 100 mA . Low voltage (max. 65 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol BC846W BC847W BC848W Unit Collector-base voltage Parameter

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC846, BC847, BC848 PIN CON FI GURATI ON N PN 1 = BASE SOT-23 Formed SMD Package 2 = EMITTER 3 = COLLECTOR 3 For Lead Free Parts, Device Part #

bc8468

Abstract: BC847 smd BC846 SMD IC ts 4141 smd marking 1F 6 PIN CDIL BC848 1g smd sot23 BC847C smd SMD Transistor 1f BC846A
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC846, BC847, BC848 P IN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR SOT-23 Formed SMD Package 3 For Lead Free Parts, Device Part #

Contextual Info: Transistors IC SMD Type Product specification BC846W,BC847W,BC848W Features Low current max. 100 mA . Low voltage (max. 65 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol BC846W BC847W BC848W Unit Collector-base voltage Parameter

smd 1C

Contextual Info: Transistors IC SMD Type Complementary PowerTrench Half-Bridge MOSFET KDS4501H Features N-Channel 9.3 A, 30 V RDS ON = 18m RDS(ON) = 23m @ VGS = 10 V @ VGS =4.5V P-Channel -5.6 A, -20 V RDS(ON) = 46 m RDS(ON) = 63 m @ VGS =- 4.5 V @ VGS =-2.5V Absolute Maximum Ratings Ta = 25

transistor smd 1E

Contextual Info: Transistors IC SMD Type Product specification BC846,BC847,BC848 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Low current max. 100 mA . 0.4 3 1 0.55 Low voltage (max. 65 V). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1

TRANSISTOR SMD MARKING CODE p1

Abstract: TRANSISTOR SMD CODE PACKAGE SOT323 TRANSISTOR SMD MARKING CODE d2 TRANSISTOR SMD MARKING CODE ce TRANSISTOR SMD MARKING CODE oc smd transistor marking code P MARKING CODE SMD IC TRANSISTOR SMD MARKING CODE 1l SMD TRANSISTOR MARKING 1B SMD TRANSISTOR MARKING 28
Contextual Info: COMCHIP Small Signal Transistor SMD Diodes Specialist BC846AW-G Thru. BC848CW-G NPN RoHS Device Features -Power dissipation O PCM: 0.15W (@TA=25 C) -Collector current ICM: 0.1A -Collector-base voltage VCBO: BC846W=80V BC847W=50V BC848W=30V -Operating and storage junction temperature

smd code marking TV sot23

Abstract: SMD MARKING CODE RIA marking code P1R smd code marking sot23 SMD transistors marking code 2.F CE MARKING SOT-23 sot-23 MARKING CODE N C smd transistors BCF70 marking p1r
Contextual Info: Low Noise SMD" Transistors Low Noise SMD Transistors Description Mechanical Data Philips Components low-noise transistors are optimized for operation on low level signals as required by audio and other amplifier circuits. All have guaranteed low-current

transistor smd 6a

Abstract: smd 1C 2945A m 830 smd Transistor Mosfet N-Ch 30V
Contextual Info: Transistors IC SMD Type 30V Complementary PowerTrench MOSFET KI4542DY Features N-Channel 6 A, 30 V RDS ON = 28m @ VGS = 10V RDS(ON) = 35m @ VGS =4.5V P-Channel -6 A, -30 V RDS(ON) = 32m @ VGS =- 10 V RDS(ON) = 45m @ VGS =-4.5V Absolute Maximum Ratings Ta = 25

ch 306

Abstract: smd 1C kds8958 1b smd transistor 78 DIODE SMD smd transistor 26
Contextual Info: Transistors IC SMD Type Dual N & P-Channel PowerTrench MOSFET KDS8958 Features N-Channel 7.0 A, 30 V RDS ON = 0.028 RDS(ON) = 0.040 @ VGS = 10 V @ VGS =4.5V P-Channel -5 A, -30 V RDS(ON) = 0.052 RDS(ON) = 0.080 @ VGS =- 10 V @ VGS =-4.5V Fast switching speed

smd 1C

Abstract: 1c smd transistor 1b smd transistor SMD Transistor nc KDS8928A SMD Transistor 1c 1130 pch Dual N & P-Channel MOSFET
Contextual Info: Transistors IC SMD Type Dual N & P-Channel Enhancement Mode Field Effect Transistor KDS8928A Features N-Channel 5.5 A, 30 V RDS ON = 0.030 RDS(ON) = 0.038 @ VGS = 4.5V @ VGS =2.5V P-Channel -4 A, -20 V RDS(ON) = 0.055 RDS(ON) = 0.070 @ VGS =- 4.5 V @ VGS =-2.5V

KDS4559

Abstract: smd 1C n-ch smd transistor ja Transistor Mosfet N-Ch 30V
Contextual Info: Transistors IC SMD Type 60V Complementary PowerTrench MOSFET KDS4559 Features N-Channel 4.5 A, 60 V RDS ON = 55m RDS(ON) = 75m @ VGS = 10 V @ VGS =4.5V P-Channel -3.5 A, -60 V RDS(ON) = 105 m RDS(ON) = 135 m @ VGS =- 10 V @ VGS =-4.5V Absolute Maximum Ratings Ta = 25

78 DIODE SMD

Abstract: smd transistor 26
Contextual Info: Transistors IC SMD Type 60V Complementary PowerTrench MOSFET KDS8333C Features N-Channel 4.1 A, 30 V RDS ON = 80m RDS(ON) = 130m @ VGS = 10 V @ VGS =4.5V P-Channel -3.4 A, 30 V RDS(ON) = 130 m RDS(ON) = 200 m @ VGS =- 10 V @ VGS =-4.5V Low gate charge High performance trench technology for extremely low RDS(ON).