1AS TRANSISTOR Search Results

C1741

Abstract: Q62702-C1741 bc847 1Bs sot-23 BC850 C1885 bc 846 marking 848 bc 580 BC848BC
Contextual Info: NPN Silicon AF Transistors BC 846 . BC 850 Features ● ● ● ● ● For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857, BC 859, BC 860 PNP

2SC2995Y

Contextual Info: TOSHIBA 2SC2995 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS ? < ; r 7 Q Q <5 Unit in mm F M / A M RF, M IX , OSC, IF HIGH FREQUENCY AMPLIFIER APPLICATIONS. 4.2MAX. • • High stability Oscillation Voltage On FM Local Oscillator. Recommend FM /AM RF, MIX, OSC and IF.

sot-23 MARKING CODE 1Gs

Abstract: bc 846 BC850 BC846
Contextual Info: SIEMENS NPN Silicon AF Transistors BC 846 . BC 850 Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857,

F21E

Abstract: transistors BC 848 ic 846 l transistors BC 183 Bc 188 pnp
Contextual Info: SIEMENS NPN Silicon AF Transistors BC 846 . BC 850 Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857,

BC848

Abstract: BC847
Contextual Info: SIEMENS NPN Silicon AF Transistors BC 846 . BC 850 Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC857,

Contextual Info: Philips Semiconductors Product specification PowerMOS transistors PHP7N40E, PHB7N40E Avalanche energy rated_ FEATURES • • • • • SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching Stable off-state characteristics

BUK446

Abstract: BUK446-1000A BUK446-1000B bu 508
Contextual Info: N AMER PHILIPS/DISCRETE 2SE D bbS3 1 3 1 Q02042S 0 WÊ PowerMOS transistor BUK446-1000A BUK446-1000B r - 3 cf ‘ 0 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

1bs sot323

Abstract: BC846AW BC846BW BC846W BC847AW BC850W BC856W BC857W BC858W BC859W
Contextual Info: BC846W.BC850W NPN Silicon AF Transistors
For AF input stages and driver applications 3
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: 2 BC856W, BC857W, BC858W 1 BC859W, BC860W PNP

MARKING CODE 21E SOT23

Abstract: BC847C E6433 NPN BC846B SOT23 BC846B E6327 power 22E 1FS SOT23 marking CODE 1BS 1Gs SOT23 DIN 6784 MV SOT23
Contextual Info: BC846.BC850 NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain 3 • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856, BC857, BC858 BC859, BC860 PNP

BC857

Abstract: BC858 BC859 BC860 BC846 BC846A BC846B BC847A BC850 BC856
Contextual Info: BC846.BC850 NPN Silicon AF Transistors
For AF input stages and driver applications
High current gain 3
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BC856, BC857, BC858 BC859, BC860 PNP 2 1 Type

1bs sot323

Abstract: BC8488 BC857W BC849CW BC858W BC859W BC860W VSO05561 BC846AW BC846BW
Contextual Info: BC846W.BC850W NPN Silicon AF Transistors
For AF input stages and driver applications 3
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: 2 BC856W, BC857W, BC858W 1 BC859W, BC860W PNP

1Bs sot-23

Abstract: sot-23 marking 1Fs 849B 1gs SOT-23 847C 848B 849C 850C SOT-23 marking 2Gs VC30
Contextual Info: BC 846 . BC 850 NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain 3 • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 856, BC 857, BC 858 BC 859, BC 860 PNP

transistors BC 848

Abstract: VSO05561 21E sot
Contextual Info: BC 846W . BC 850W NPN Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 856W, BC 857W, BC 858W 2

IRFPO44

Abstract: IRFP045 IRFP044 diode sy 171 C466 irfpu44 C463 T-39 LG 57A RNC 90
Contextual Info: HE D I 4ÛSS4S2 aGdâ71E Data Sheet No. PD-9.583A 5 | INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER X R REPETITIVE AVALANCHE AND dv/dt RATED 175°C OPERATING TEMPERATURE IRFPÜ44 IRFPQ45 HEXFET TRANSISTORS N-CHANNEL 60 Volt, 0.028 Ohm HEXFET TO-247AC TO-3P Plastic Package

BC8488

Abstract: BC846 BC846A BC846B BC847A BC850 BC856 BC857 BC858 BC859
Contextual Info: BC846.BC850 NPN Silicon AF Transistors
For AF input stages and driver applications
High current gain 3
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BC856, BC857, BC858 BC859, BC860 PNP 2 1 Type

BC846AT

Abstract: BC846BT BC846T BC847AT BC847BT BC850T BC856T BC857T BC858T BC859T
Contextual Info: BC846T.BC850T NPN Silicon AF Transistors
For AF input stages and driver applications
High current gain 3
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BC856T, BC857T, 2 BC858T, BC859T, BC850T 1

BC8488

Abstract: H12E BC848 equivalent 1bs sot323
Contextual Info: BC846W.BC850W NPN Silicon AF Transistors
For AF input stages and driver applications 3
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: 2 BC856W, BC857W, BC858W 1 BC859W, BC860W PNP

BC846AT

Abstract: BC846BT BC846T BC847AT BC850T BC856T BC857T BC858T BC859T BC860T
Contextual Info: BC846T.BC850T NPN Silicon AF Transistors
For AF input stages and driver applications
High current gain 3
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BC856T, BC857T, 2 BC858T, BC859T, BC860T 1

BC8488

Abstract: BC846 Infineon BC850C INFINEON
Contextual Info: BC846.BC850 NPN Silicon AF Transistors
For AF input stages and driver applications
High current gain 3
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BC856, BC857, BC858 BC859, BC860 PNP 2 1 Type

Contextual Info: G E SOLID STATE 01 D E l 3675081 0014b43 T r r - S _ IB _ m 3 " 2 Arrays CA3127 High-Frequency N-P-N Transistor Array For Low-Power Applications at Frequencies up to 500 MHz Features:

BC848T

Abstract: CB-502 BC849CT 849T BC858T BC846T
Contextual Info: BC846T.BC850T NPN Silicon AF Transistors
For AF input stages and driver applications
High current gain 3
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BC856T, BC857T, 2 BC858T, BC859T, BC850T 1

marking CODE 1BS

Abstract: BC846 Infineon BC846-BC850 NA MARKING SOT23 NPN BC846B SOT23 BC846B E6327 BC857 st MV SOT23 BC857 BC858
Contextual Info: BC846.BC850 NPN Silicon AF Transistors
For AF input stages and driver applications
High current gain 3
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BC856, BC857, BC858 BC859, BC860 PNP 2 1 Type

Contextual Info: BC846T.BC850T NPN Silicon AF Transistors
For AF input stages and driver applications
High current gain 3
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BC856T, BC857T, 2 BC858T, BC859T, BC860T 1

11H19

Abstract: B307
Contextual Info: 1DI75E-120 75a •’ Outline Drawings POWER TRANSISTOR MODULE : F e a tu re s • SW Œ High Voltage • 7 U —sjî'f K rtJR • A S O à 'lS l' • flêäüffi Including Free W heeling Diode Excellent Safe Operating Area Insulated Type If fliÊ : A p p lic a tio n s