1AM DIODE Search Results

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish LMBT3904LT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT3904LT1G 1AM 3000/Tape & Reel LMBT3904LT3G 1AM 10000/Tape & Reel

270vdc

Abstract: "thermal fuse" ry
Contextual Info: MI-1AM M ilitary Input A tten u ator Modules Product Highlights The MI-IAM is an accessory product to Vicor’s Ml-Series of DC-DC converters that provides the EMI/RFI filtering and transient protection required in military applications. Designed for use

TRANSISTOR SMD MARKING CODE 1AM

Abstract: smd transistor 1AM smd 1AM SMD TRANSISTOR MARKING 1am 1am smd 1am smd transistor SMD MARKING CODE 1am SMD 1am Transistor marking code SS SOT23 transistor transistor 1am
Contextual Info: General Purpose Transistor SMD Diodes Specialist MMBT3904-G NPN RoHS Device Features -Epitaxial planar die construction SOT-23 -As complementary type, the PNP 0.118(3.00) 0.110(2.80) transistor MMBT3904-G is recommended 3 0.055(1.40) 0.047(1.20) 1 2 0.006(0.15)

TRANSISTOR SMD MARKING CODE 1AM

Abstract: smd transistor 1AM smd 1AM SMD MARKING CODE 1am MMBT3904-HF SMD TRANSISTOR MARKING 1am 1am smd marking code SS SOT23 MARKING SMD PNP TRANSISTOR 1am 1am smd transistor
Contextual Info: General Purpose Transistor SMD Diodes Specialist MMBT3904-HF NPN RoHS Device Features -Halogen Free -Epitaxial planar die construction SOT-23 0.118(3.00) 0.110(2.80) -As complementary type, the PNP 3 transistor MMBT3904-HF is recommended 0.055(1.40) 0.047(1.20)

A114D

Abstract: A114F SE708 DT230B DT230F STB-568 GER4007 a114n DZ800 MA1703
Contextual Info: SILICON S IG N A L DIODES 100 M A T Y P E S Continued U BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf @ 25°C Max. M ax. @ V r (V) 30 20 100 Co @ lF(mA) (V) 50 1 .00 30 1.00 Package O utline No. S p e cificatio n Sh eet No. @ OV trr (pif) (nsec)

Contextual Info: DIODES INC PRODUCT CHANGE NOTICE Contact Date: Implementation Date: Alert Category: 6/24/02 6/24/02 Discrete Semiconductor DCS/PCN-1011 Alert Type: PCN #: Specification Change, Marking Change, Assembly Site & Test Site PCN #:2002-1011 TITLE Specification Change, Marking Change MMBT3904

marking DIODE 2U 04

Abstract: marking 2U diode marking 2U 20 diode marking 2U 40 diode d490 D491 marking 2U 28 diode 2u schottky Barrier Diodes WSD490 WSD491
Contextual Info: W SD 490/W SD 491 Surface M o un t Schottkv B a rrie r Diode SCHOTTKV BARRIER R E C TIFIER S 1.0AM PERES 20-40VOLTS F eatu res: *L ow Turn-on Voltage *Fast S w itch in g *PN Ju n ction G uard Ring fo r T ransient and ESD P rotection M echanical D ata: *Case : SOT-346, M olded P lastic

Contextual Info: HN1D03FU TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE h n i n n 3 F 11 m m m 'm m m mr v • ULTRA HIGH SPEED SWITCHING APPLICATION. U n it in mm • B u ilt in Anode Common and Cathode Common. TT. *j H unit x 2 .i± a i 1.25±0.1 • Low Forw ard Voltage

Contextual Info: DU C o n te n ts S e rie s Page Surface Mount Devices •s g g s a Thick Film Chip Resistors RC 2 h U v 7JU5F 7 yiftifLtff Trimmable Chip Resistors RC Tr 6 51 7 T'tSfiiT' 7 h *7 — ? Chip Resistor Networks RAC 8 Chip Trimmer Potentiometers * 7 8 £ 3 i7 >

V06C HITACHI

Abstract: DHM3K20 DHM3HC80 hitachi rectifier U05B DHM3G80 DFM1SA DHM3FG80 DAM3A HITACHI DFG2A hitachi V03C
Contextual Info: Diodes Axial • it m. Lead Type v-vwmm* mm#*- m¿2&&r¿3>cy7 vyz^mm^ l«-?íf5o t t x - yy yya iFeatures ►Hitachi diodes are available for any kind of applications. The versatile lineup includes general use rectifier diodes, surge-absorbing devices, high-voltage

BT3904

Abstract: 2N3903 MOTOROLA SOT-23 BT3904LT1
Contextual Info: M A X IM U M RATINGS Rating Symbol Value Collector-Emitter Voltage v CEO 40 Vdc Collector-Base Voltage v CBO 60 Vdc Emitter-Base Voltage v EBO 6.0 Vdc 'c 200 mAdc Symbol Max Unit Pd 225 mW 1.8 mW/°C r »j a 656 ° c /w pd 300 mW 2.4 m w rc r 0JA 417 ° c /w

Contextual Info: SMB10 8 J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction

SMBJ vishay

Contextual Info: SMB10 8 J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction

Contextual Info: SMB10 8 J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Supressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction

marking code 1bx

Contextual Info: SMB10 8 J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Supressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction

Contextual Info: SMB10 8 J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction

Contextual Info: SMB10 8 J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction

Contextual Info: SCRs ID200-ID203 ID300-ID301 1.6 Amp, Planar FEATU RES DESCRIPTION • • • • This Data Sheet describes Microsemi's line of hermetically sealed industrial SCRs designed for high-voltage, medium-current control applications. The Series is packaged in a TO-39 metal case with Microsemi's unique oxide passivated junctions to ensure

Contextual Info: SMB10 8 J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction

ba38 diode

Abstract: rca tube OC 3 RADIOTRON ST-12 rca company Scans-0017340 if7g RCA tube
Contextual Info: DUPLEX-DIODE PENTODE Coated 2 .0 0 .0 6 F i lament V o lta g e C u rre n t d -c v o lt s amp. D ir e c t I n t e r e le c t r o d e C a p a c ita n c e s - Pentode U n it : 0 .0 0 7 max. put G r id to P la t e w ith sh ie ld -can 4 p jjf Input 9 ¿ i/jf

Contextual Info: l i 5E D POUEREX INC • 72^41,31 0DÜ3bhB 7 " F -â ? -ü mNEREX ED_ Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 1S697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 Dual SCft, SCR/Diode Isolated Modules

CR02A

Contextual Info: POltiEREX INC H M B 1SE D R S • TSTMbSl QGG34T5 1 T Powerex, Inc., Hlllis Street, Yaungwood, Pennsylvania t5697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107,72003 Le Mans, France (43) 72.75.15 CDL2_ 60 CDL7_ 60 Tentative SCR/Diode Light-Triggered

Contextual Info: SANYO SEMICONDUCTOR CORP b3E D • 7 [n 7 G ? b D012D11 51T «TS A J a m ^ z l— - y S uita ble i Type No. °ackaqe RP • : MIX-OSC M o s t S uitable ,F Arr'° o "c o n v • • Detector Narrow tana stop&gr» • Local Buffer Voltage Range CV LA1130

1am surface mount diode

Abstract: c845 2GM sot-23 transistor G1 TRANSISTOR SOT 23 PNP 2F PNP SOT23 P1F marking AS3 SOT223 p2f sot-223 c845 TO 92 SOT-223 P1f
Contextual Info: ON Semiconductor Bipolar Transistors Bipolar Transistors Continued Plastic-Encapsulated Transistors (Continued) Plastic-Encapsulated Multiple Transistors Plastic-Encapsulated High-Voltage Amplifier Transistors (Case 29-04 Ñ TO-226AA (TO-92) Ñ PNP) hFE @ IC