1A 300V TRANSISTOR Search Results

FZT857

Abstract: FZT957 FZT958 DSA003675
Contextual Info: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS FZT957 FZT958 ISSUE 3 - JANUARY 1996 FEATURES * 1 Amp continuous current * Up to 2 Amps peak current * Very low saturation voltage * Excellent gain characteristics specified up to 1 Amp

1A 300V TRANSISTOR

Abstract: 300V transistor npn 2a NTE94 300V regulator TRANSISTOR 187
Contextual Info: NTE94 Silicon NPN Transistor High Voltage Switch Description: The NTE94 is a silicon NPN transistor in a TO3 type case designed for medium to high voltage inverters, converters, regulators, and switching circuits. Features: D High Collector–Emitter Voltage: VCEO = 300V

ZTX957

Abstract: TO-1 amps pnp transistor DSA003780
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX957 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. -710 -850 mV IC=-1A, VCE=-10V* Static Forward Current Transfer Ratio

1A 300V TRANSISTOR

Contextual Info: KSC5402D/KSC5402DT NPN Silicon Transistor, Planar Silicon Transistor Features • • • • • • D-PAK High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time

Contextual Info: KSC5338D/KSC5338DW NPN Triple Diffused Planar Silicon Transistor Features • • • • • • High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time

Contextual Info: KSC5338D/KSC5338DW NPN Triple Diffused Planar Silicon Transistor Features • • • • • • High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time

Contextual Info: KSC5502 NPN Planar Silicon Transistor High Voltage Power Switch Mode Application • • • Small Variance in Storage Time Wide Safe Operating Area Suitable for ElectronicBallast Application Equivalent Circuit C B 1 TO-220 E 1.Base Absolute Maximum Ratings *

Contextual Info: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSC5338D/KSC5338DW HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION * * * * * TO-220 Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time

nte175

Abstract: NTE38
Contextual Info: NTE38 PNP & NTE175 (NPN) Silicon Complementary Transistors High Voltage, Medium Power Switch Description: The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high– speed switching and linear amplifier applications for high–voltage operational amplifiers, switching

pnp 500v

Abstract: vbe 10v, vce 500v NPN Transistor NTE175 NTE38
Contextual Info: NTE38 PNP & NTE175 (NPN) Silicon Complementary Transistors High Voltage, Medium Power Switch TO66 Type Package Description: The NTE38 (PNP) and NTE175 (NPN) are complementary silicon transistors in a TO66 type package designed for high−speed switching and linear amplifier applications for high−voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers.

Contextual Info: SDF04N06 Green Product S a mHop Microelectronics C orp. Ver 1.2 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS ON . PRODUCT SUMMARY V DSS ID 600V 4A R DS(ON) ( Ω) Max Rugged and reliable. 2.5 @ VGS=10V

2N6563

Abstract: buw73 BOSE
Contextual Info: O u tr a n Devices. Inc. HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER IMPIM EPITAXIAL PLANAR POWER TRANSISTOR FORMERLY 12 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)

UPT311

Abstract: SS-050 A UPT312 UPT313 UPT314 UPT315 UPT321 UPT322 UPT323 UPT324
Contextual Info: POWER TRANSISTORS UPT311 UPT312 UPT313 UPT314 UPT315 2 Amp, 400V, Planar NPN UPT321 UPT322 UPT323 UPT324 UPT325 DESCRIPTION FEATURES • Collector-Base Voltage: up to 400V • Peak Collector Current; 3A • Turn-on Time: 200 ns • Turn-off Time-. 800 ns Unitrode high voltage transistors provide

UPTA520

Abstract: UPTA510 UPTA530 UPTAS20
Contextual Info: POWER TRANSISTORS UPTA510 UPTA520 UPTA530 0.5 Amp, 300V, Planar NPN, Plastic FEATURES D ESCRIPTIO N • • • • U nitrode h igh voltage tra n sisto rs provide a u niq u e com b in ation of low saturation voltage, fast sw itching, an d excellent gain. They are ideally su ite d for off-line power

ZTX958

Abstract: TO-1 amps pnp transistor transistor 3330 DSA003780
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX958 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. Static Forward Current Transfer Ratio hFE Transition Frequency fT 85 Output Capacitance Cobo

SDT4901

Contextual Info: C Ä 7 Ä [L MEDIUM TO HIGH VOLTAGE, FAST SWITCHING o n tr a n Devices. Inc. NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR (FORMERLY 16 C H IP N U M B E R CONTACT METALLIZATION B ase and emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "C hrom e Nickel S ilv er" also available)

NTE124

Abstract: 325V
Contextual Info: NTE124 Silicon NPN Transistor High Voltage Power Output Description: The NTE124 is a general purpose transistor in a TO66 type package designed for high speed switching, linear amplifier applications, high voltage operational amplifiers, switching regulators, converters,

Contextual Info: -Ælitron [P ^ 6 [ d)Q J] T © Ä T T M , Devices. Inc. VERY HIGH VOLTAGE, FAST SWITCHING NPIM TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CHIP NUMBER (FORMERLY 40) CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or “Chrome Nickel Silver" also available)

Contextual Info: FJI5603D NPN Silicon Transistor Applications Equivalent Circuit • • High Voltage and High Speed Power Switch Application Electronic Ballast Application C Features • • • B Wide Safe Operating Area Small Variance in Storage Time Built-in Free Wheeling Diode

Contextual Info: Transistors SOT23 B SOT23 Case NPN miniReel a » miniBag Order Order Number Number l ^ 7 } Type 500 pcs. ^ 100 pcs. 0 NPN General Purpose MMBT2369 73-2369 53-2369 BC818-16 73-8181 53-8181 BC818-25 73-8182 53-8182 BC818-40 73-8183 53-8183 BC848A 73-8481 53-8481

2N6510

Abstract: 2N6513 2n6512 2N6511 2NG510 2N6514
Contextual Info: 2N6510 2N6511 2N6512 2N6513 2N6514 POWER TRANSISTORS 7 Amp, 400V, Triple Diffused NPN Mesa FEATURES • Collector-Base Voltage: up to 400V • Peak C ollector Current: 10A • Rise Time: < 1.5/js > • Fall Time: < 1.5ms \ lc = 4A DESCRIPTION These high voltage trip le diffused glass

2SC4231

Abstract: 2sc4231 transistor ITO-220 TP2V80HFX
Contextual Info: SHINDENGEN Switching Power Transistor HFX Series OUTLINE DIMENSIONS 2SC4231 Case : ITO-220 TP2V80HFX Unit : mm 2A NPN RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage

2SC4058

Abstract: 2SC4058 transistor T10W45FX npn switching transistor Ic 5A transistor case MTO-3P NPN Transistor 1.5A 300V
Contextual Info: SHINDENGEN Switching Power Transistor FX Series OUTLINE DIMENSIONS 2SC4058 Case : MTO-3P T10W45FX Unit : mm 10A NPN RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

2SC4230

Abstract: T2V80HFX
Contextual Info: SHINDENGEN Switching Power Transistor HFX Series OUTLINE DIMENSIONS 2SC4230 Case : TO-220 T2V80HFX Unit : mm 2A NPN RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage