1S419 Search Results

1S411

Abstract: 1S420 1S425 1S423 1S421 1S427 1S410 1S413 1S415 1S417
Contextual Info: Discrete Semiconductors <¿^3 T e x a s I n s t r u m e n t s Metal Case Stud-mounted Rectifiers Device No. Case 1S410 1S411 1S413 1 S4 1 5 1 S4 1 7 1S419 S010 S010 S010 S010 S010 S010 1S420 1S421 1S423 1S425 1 S4 2 7 1S429 1S429/R S010 S010 S010 S010 S010

Contextual Info: HM514190A/AL, 1S4190A/AL Series Preliminary 262,144-Word x 18-Bit Dynamic Random Access Memory • DESCRIPTION ■ FEATURES The Hitachi HM514190A/AL are CMOS dynamic RAM or­ ganized as 262,144-word x 18-bit. HM514190A/AL have re­ alized higher density, higher performance and various func­

Contextual Info: HITACHI/ LOGIC/ARRAYS/M b?E D • 44^503 002447S HM514190A/AL, 1S4190A/AL Series 5flb ■ HITS Preliminary 262,144-Word x 18-Bit Dynamic Random Access Memory ■ DESCRIPTION ■ FEATURES The Hitachi HM514190A/AL are CMOS dynamic RAM or­ ganized a s 262,144-word x 18-bit. HM514190A/AL have re­

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

diodes IN4001

Abstract: S06 rectifier in648 1S940 rectifier in4004 1S136 1S115 Diodes In4007 1s020 IN4007
Contextual Info: Diodes and Rectifiers Type C a se No. A m p s. (V o lts) (A m p s.) (n A ) Drawing Average Rectified Forward Current C rest Single Max. I R S P E C IA L No. A m bient Tem perature W orking Cycle at P .I.V . FEA TU RES Voltage Surge at 25°C 25°C 50°C 100°C

3TE445

Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Contextual Info: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group

HM514190AJ7

Contextual Info: HM514190A/AL, 1S4190A/AL Series Preliminary 262,144-Word x 18-Bit Dynamic Random Access Memory • DESCRIPTION ■ FEATURES The Hitachi HM514190A/AL are CMOS dynamic RAM or­ ganized as 262,144-word x 18-bit. HM514190A/AL have re­ alized higher density, higher performance and various func­

BA100 diode

Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any