1S223 Search Results

1S2236

Abstract: 09313 DDM313 09312 V10-30
Contextual Info: b7 TOSHIBA {DIS CRE TE/ OPT O} dìT| ^7250 Dom3 ia t 1~~ 9097250 TOSHIBA DI SCRETE/OPTO D T ^ l 1/ ? 67C 09312 Silicon Epitaxial Planar Type 1S2236 Variable Capacitance Diode Unit in mm AFC APPLICATION FOR FM RECEIVER. O A FEATURES : . High Q Q=70(Min.) (f=50MHz)

is225

Abstract: IS238 IS256
Contextual Info: — y m % tt « P m ïï 1S 141 1S142 1S 14 3 1S220 1S221 1S222 1S223 1S224 1S225 1S226 1S227 1S228 1S229 1S230 1S231 1S232 1S233 1S234 1S235 1S236 1S237 1S238 1S239 1S240 1S241 1S242 1S243 1S244 1S245 1S246 1S247 1S248 1S249 1S250 1S251 1S252 1S253 1S254

Contextual Info: — y m % tt « P m ïï 1S 141 1S142 1S 14 3 1S220 1S221 1S222 1S223 1S224 1S225 1S226 1S227 1S228 1S229 1S230 1S231 1S232 1S233 1S234 1S235 1S236 1S237 1S238 1S239 1S240 1S241 1S242 1S243 1S244 1S245 1S246 1S247 1S248 1S249 1S250 1S251 1S252 1S253 1S254

4D4B44

Abstract: 4G4B44 4B4B44 4B4B41 1ZB36 U1Z36 S5188 S5500G 4J4B44 U1Z13
Contextual Info: D I S C O N T I N U E D T Y P E L IS T P art No. 0R06NXZ31 0R06YXZ31 0R5D4B42 1DZ6K1N5059 1GZ61 1N5060) 1JZ61 ( 1N5061 ) 1LE11 1LZ6K1N5Û62) 1N4001A 1N4002A 1N4003A 1N4004A 1N4005A 1N4006A 1N4006E 1N4007A 1NE11 1QE11 1S220 1S221 1S222 1S223 1S224 1S225

Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA Ï>F| ^ 7 5 5 0 b7 DI SC RE TE /O PT O 000^315 fa D T ~ c l :/ ? 67C 09312 Silicon Epitaxial Planar Type 1S2236 Variable Capacitance Diode Unit in mm AFC APPLICATION FOR FM RECEIVER. ’S a 's. FEATURES : . High Q

Contextual Info: 1S2236 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.14p C1/C2 Min. Capacitance Ratio2 V(RRM)(V) Rep.Pk.Rev. Voltage15 Q Factor Min.120 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleDO-35 Mounting StyleT

1S1585

Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
Contextual Info: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80

sfu455b

Abstract: bpwb5 TDA7222A 225kHz FM SDIP24 TDA7222AD 7222A
Contextual Info: TDA7222A TDA7222AD 3V AM/FM ONE-CHIP RADIO . . . ADVANCE DATA BUILT-IN FM F/E, AM/FM IF AND FM MPX AM DETECTOR COIL AND IF COUPLING CAPACITOR ARE NOT NEEDED COMPACT PACKAGE : 24-Pin Shrink OPERATING SUPPLY VOLTAGE RANGE VCC opr = 1.8 to 7.0V (TA = 25oC)

TDA7222A

Abstract: SDIP24 TDA7222AD 1S2236 agc cf 0300
Contextual Info: TDA7222A TDA7222AD 3V AM/FM ONE-CHIP RADIO . . . ADVANCE DATA BUILT-IN FM F/E, AM/FM IF AND FM MPX AM DETECTOR COIL AND IF COUPLING CAPACITOR ARE NOT NEEDED COMPACT PACKAGE : 24-Pin Shrink OPERATING SUPPLY VOLTAGE RANGE VCC opr = 1.8 to 7.0V (TA = 25oC)

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

09803

Abstract: 1S2238 1S2239 1S2240 V07E V07G V07J hitachi V07 Hitachi Scans-001
Contextual Info: — ^ B W F T T T T A C H l / t.Uh’T O E L t u T R Ü N I C S V07 9 . 68c 0 98 02 D K C o n tro lle d A v a la n c h e D io d e ) "ba DE | 4 4 ^ 2 0 5 Vr r m : 400V~800V 'F(AV) : 1.3 A Va VL : 1600V M A X . ODDTñOS 5 | CO 29MIN (1.14) (2.44) 5.0MAX *(0 .2 )*

TOSHIBA RF Power Module S-AV24

Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
Contextual Info: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

tbf819

Abstract: mg50g2cl4 MG30T1AL1 GT60J101 2SD1678 ths102a MG60M1AL1 MG150N2CK1 YTF541 THS106A
Contextual Info: 保守品種一覧表 [9] [ 9 ] 保守品種一覧表 次の品種が保守品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 保守品種 1 形 名 代替品種 形 名 代替品種

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

3SK73

Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
Contextual Info: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

sfu455b

Abstract: SFU455 sfu455b datasheet bpwb5 1S2236 455k 225kHz FM sumida am local am fm radio AM tuners
Contextual Info: TDA7222A TDA7222AD 3V AM/FM ONE-CHIP RADIO . . . ADVANCE DATA BUILT-IN FM F/E, AM/FM IF AND FM MPX AM DETECTOR COIL AND IF COUPLING CAPACITOR ARE NOT NEEDED COMPACT PACKAGE : 24-Pin Shrink OPERATING SUPPLY VOLTAGE RANGE VCC opr = 1.8 to 7.0V (TA = 25oC)

1ZB36

Abstract: 0R1QYZ41 4D4B44 6b4b41 4D4B41 s5502n 0R1NYZ41 30jh11 10L6P44 30L6P43A
Contextual Info: [ 10 ] 保守廃止品種一覧表 [ 10 ] 保守廃止品種一覧表 次の品種が保守品種および廃止品種となっております。新規採用は代替推奨品種にてご検討くださいま すようお願いいたします。 2003-3-1 現在

mg75n2ys40

Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
Contextual Info: 小信号ダイオード SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

BB 505 Varicap Diode

Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
Contextual Info: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent

FET K161

Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
Contextual Info: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or

1S265 Zener Diode

Abstract: 1S262-1S303 1S265 zener 150v 1w DIODE 39c 1s298 1S303 1S272 2.LZ9.1 1S256
Contextual Info: 1 9097250 TOSHIBA S ZENER DIODE D IS C R E T E / O P T O ! 39C 02384 D TW / TOSHIBA -CDISCRETE/OPTOJ 1Z6.2— 1Z30 6,2V ~ 30V Voltage Tolerance Value : ±10% I 1S262— 1S303 I MAXIMUM RATINGS (Ta = 25°C) ELECTRICAL CH ARACTER ISTICS ‘ (Ta MAXIMUM RATINGS (T a

zener diodes 10z6.2

Abstract: 1S265 Toshiba 02BZ2.2 1S2452-1S2454 10Z15-M 02BZ2.2 05Z30 10Z12-M 05Z16L 02z18a
Contextual Info: TOSHIBA {DISCRETE/OPTO} 3e] ZENER DIODES \ _ 9097250 TOSHIBA <DI S C R E T E / O P T O > . “ 39 C 0 2 2 2 1 I ZENER DIODES Vz Typical Value 2 5 0 mW Type " 0.5 W Type 1 W Type 1W Type {Plastic Mold Type {Metal Typ« DE • TDTTESO □□□2221 1 I ’

FET K161

Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
Contextual Info: 高周波用半導体デバイス トランジスタ・FET・セルパック編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製