1N4930 Search Results

Contextual Info: Zero-TC Reference Diodes Part Number 1N4907A 1N4900 1N4900A 1N4901 1N4901A 1N4902 1N4902A 1N4903 1N4903A 1N4896 1N4896A 1N4897 1N4897A 1N4898 1N4898A 1N4899 1N4899A 1N4929 1N4929A 1N4930 1N4930A 1N4931 1N4931A 1N4932 1N4932A 1N4925 1N4925A 1N4926 1N4926A 1N4927

IR 30DF

Abstract: FF1004 RGP10 DO-201AD BA150 BY290 30df FF1506 FF1504 BY398GP
Contextual Info: QUICK GUIDE Fast Recovery Rectifiers FAST RECOVERY RECTIFIERS (AXIAL DEVICES) IF IFSM 50V 100V 200V RGP08 1A 30A RGP08A RGP08B RGP08D FF1001 FF1002 FF1003 SERIES FF1000 1A 35A BA150GP 1A 35A 1N4930GP 1A 30A 1N4933GP RGP10A 1N4934GP 300V 400V 500V RGP08G

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

n4922

Abstract: N4918 n4919 1N4916 1N4916A 1N4917 1N4917A 1N4918 1N4918A 1N4919
Contextual Info: 1N4916 19.2 VOLT NOMINAL ZENER VOLTAGE + 5% thru •TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 1N4932A ■METALLURGICALLY BONDED -1 * DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS O perating Temperature: -6 5 °C to + 17 5°C S torage Temperature: -6 5°C to + 1 7 5 °C

Contextual Info: DIGITRON SEMICONDUCTORS 1N4916 A -1N4932(A) 19.2 VOLT LOW NOISE TEMPERATURE COMPENSATED ZENER REFERENCE DIODES MAXIMUM RATINGS Characteristics Values Junction and storage temperatures -65 to +175°C DC power dissipation 500mW @ 50°C Power derating 4 mW/°C above 50°C

1N4928

Abstract: 1N4916 1N4916A 1N4917 1N4917A 1N4918 1N4918A 1N4919 1N4919A 1N4920
Contextual Info: 1N4916 thru • 19.2 VOLT NOMINAL ZENER VOLTAGE + 5% • TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 1N4932A • LOW NOISE • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C

IN827 Temperature Compensated Zener

Abstract: 1N4T48 IN4571 1N4611A 1N5306 JAN 1n829 noise diode zener 3144 voltage in4572 IN821 IN827
Contextual Info: C 0 D I SEMICONDUCTOR INC 2«iE D 1 7 7 5 4 7 0 0D0 CI L55 b B I C 0 D I Mi l ElSifl ni T -O U O °l c Silicon Diodes JEDEC REGISTERED TEMPERATURE COMPENSATED VOLTAGE REFERENCE DIODES D O - 7 Package V o lta ge C u rre n t mA V o lts 62 62 64 6.4 64 64 65

Contextual Info: 1N4933GP . 1N4937GP 1 Amp. Glass Passivated Fast Recovery Rectifier Dimensions in mm. DO-41 Plastic Current 1.0 A at 75 °C ø0.8 ±0.05 ø2.6 ±0.1 Voltage 50 to 600 V R +0.2 5-0 ±0.5 58.5 • Glass passivated junction Mounting instructions 1. Min. distance from body to soldering point,

Contextual Info: FAGOR a 1N4933GP. 1N4937GP 1 Amp. Glass Passivated East Recovery Rectifier Dimensions in mm. D O -4 1 Voltage 50 to 600 V. P la s tic « Current 1.0 A. at 75 °C. O 5=0.2 8 .5 inin. Mounting instructions 1. Min. distance from body to soldering point,

fagor fbu4 bridge rectifier

Abstract: diode zener 600v 1a ZENER DIODE 5K diode bridge 2A 3ZX35C Zener Diode 3A zener diode 5A RGP10 diode RGP30 Diode bridge 600V 0.8A
Contextual Info: FA G O R^ End Applications AUTOMOTIVE END APPLICATION If DEVICES USED DEVICE TYPE ALTERNATOR 3A B Y250,1N 5400, 1N5620GP G eneral Purpose Rectifier POWER STEERING 3A GP30 AM BAG 1A 1N4000GP, ESI 5KP Transient V oltage Suppressor INSTRUMENT PANEL 5KW 1A GP10, FS1

IN4937

Abstract: IN4933GP GP 27A 12V Fagor GP in4935 1N4933GP 1N4937GP HVR062 IN4936 IN4934GP
Contextual Info: S7E D 3MST35S GDDObflM bGS H F 6 R S 1N4933GP.1N4937GP F A G O R ^ p FAGOR ELECTRONICS "T-03-'3> Dimensions in mm. DO-41 Plastic Voltage 50 to 600 V. Mounting instructions 1. Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350°C.

1N4916

Abstract: 1N4916A 1N4917 1N4917A 1N4918 1N4918A 1N4919 1N4919A 1N4920 1N4932A
Contextual Info: niCRosEm corp ste d • b i i s a b s o o o n M t . 33T ■ tisc 1N4916 thru 1N 4932A Microsemi Corp. f Ttie dtode S A V T A A S A . C A S C O T T S D A L E A7. Fur more information call 602 941-6300 / FEATURES 19.2 VOLT LOW NOISE TEMPERATURE COMPENSATED

IN939

Abstract: 1n4771 1N4770 1N4770A 1N4771A 1N4772 1N4772A 1N4773 1N4773A 1N943
Contextual Info: a> ro OUICK REFERENCE GUIDE MICROSEMI VOLTAGE REFERENCE TC DIODES Test Current l7T mA 62 62 75 ?5 DO-7/DO-35 DO-7/DO-35 6 3 75 DO-7 Operating Temperature Range, °C - 55 to * 100 - 5 5 to - 100 0.002%/°C 0.005% °C 0.01%/ C Case Type Type Number A VZ MV

C 6073

Contextual Info: GUIDE TO METALLURGICALLY-BONDED AXIAL LEAD DIODES JAN JTX-JTXV TYPES M ilita ry s p e c if ic a t io n s re q u ire th a t a ll d e v ic e s s h o w n h ere be m e ta llu r g ic a lly b o n d e d , n ot ju s t " - I ” p a rts a s is g e n e ra lly b e lie v e d . A ll d e v ic e s lis t e d on th is c h a rt a re m a n u fa c tu re d by M ic r o s e m i C o rp o ra tio n w ith th e s a m e h a rd g la s s

1N4916

Abstract: 1N4916A 1N4917 1N4917A 1N4918 1N4918A 1N4919 1N4919A 1N4920 1N4932A
Contextual Info: 1N4916 thru • 19.2 VOLT NOMINAL ZENER VOLTAGE + 5% • TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 1N4932A • LOW NOISE • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C

1N4T48

Abstract: 1N5526B JANTX diode zener 3144 voltage 1N941 1N5283 diode zener 3144 1N4611A 1N3496 1N3497 1N3499
Contextual Info: C 0 D I SEMICONDUCTOR INC 2RE D 177S47G OGDGbSS b • C O D I M il 7=0 », 0°i c Silicon Diodes JEDEC REGISTERED TEMPERATURE COMPENSATED VOLTAGE REFERENCE DIODES D O - 7 Package V o lta g e C u rre n t mA V o lts 62 62 64 6.4 64 64 65 66 66 66 8 4 8 5 85

Contextual Info: •19.2 VOLT NOMINAL ZENER VOLTAGE + 5°o 1N4916 thru ■TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 1N4932A ■METALLURGICALLY BONDED -1 • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Operating Temperature: '6 5 °C to +175°C Storage Temperature: -65°C to +175°C

by250 diode

Abstract: diode RGP30 ultraFast Recovery Bridge Rectifier zener alternator rectifier zy zener rgp10 Diode rgp10 BA150 DIODES BY250 BY250
Contextual Info: End Applications AUTOMOTIVE END APPLICATION ALTERNATOR POWER STEERING AIR BAG IF 3A 3A 1A 5KW INSTRUMENT PANEL 1A DASHBOARD 1.5A 3A 1.3W, 2W 1.5KW, 5KW ABS SYSTEM 1A 1A, 1.5A 1.3W, 2W 400W÷ 5KW ANTI THEFT DEVICES 1A 1.3W, 2W 400W LIGHT CONTROL 1.3W ENGINE CONTROL

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

Contextual Info: I n ter n a tio n a l 1N4916 thru 1N4932A S e m ic o n d u c to r , I n c . TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 19.2 V O LT N O M IN A L ZEN ER V O LT A G E +/- 5% LOW NO ISE MAXIMUM RATINGS operating Temperature: storage Temperature: DC Power Dissipation:

Contextual Info: M6 0 R ^ 1N4933. 1N4937 1 Amp, Fast Recovëry Silicon Diodes Dim ensions in mm. 4f = ^ DO-15 Plastic 1 Current 1.0 A. at 75°C. ^: t -4S, 58.5 Voltage 50 to 600 V. 0.2 0.5 • Fast Recovery Diodes Mounting instructions • Diffused junction 1. Min. distance from body to soldering point,