1N4592 Search Results

Contextual Info: Standard Recovery Rectifiers I Part Number REC R4320 S4320 SDM15002 1N2440 1N2441 1N4589 R4330 S4330 1N2442 1N2443 1N4590 R4340 S4340 SDM15004 1N2444 1N4591 R4350 S4350 1N2445 1N4592 R4360 S4360 SDM15006 1N4593 R4380 S4380 SDMI 5008 1N4594 R43100 S43100 SDM15010

Contextual Info: 1N4592 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current150 @Temp (øC) (Test Condition)110 V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.3.0k V(FM) Max.(V) Forward Voltage1.4 @I(FM) (A) (Test Condition)150 @Temp. (øC) (Test Condition)110

1N2222A

Abstract: 1n2222 IN2071A 1N3934 1N3578 IN222 IN1342 IN5054 IN5053 1N3549
Contextual Info: xcmicron - _ SB._ 27E » • MäbTEMb 00005=17 MäbTEMb O OOOST? s em ic o n d u c to r s S e m itr o n ic s C o r p . IN T E X / S E M IT R O N IC S silicon rectifiers cont’d miniature axial lead silicon rectifiers T»» 1N3241 1N3242 1N3243 1N3244

LT3973-3.3

Abstract: IN4012 in401 IN1730 IN1118 IN3288 in2063 IM361 IN-17 1N1731
Contextual Info: ^ discrete devices | jemitronicr hot line TO LL FREE NUM BER 800-777-3960 silicon rectifiers stud mounted silicon power rectifiers DO-4 case style — Maximum Peak Reverse Voltage volts Type Maximum Average Forward Current (Amps) @ Case Temp. (°C ) Maximum

1N2437

Abstract: D0-205AA S4380 1N2436 1N2438 1N2439 1N2440 1N3288A 1N4587 S4310
Contextual Info: Silicon Power Rectifier S / R 4 3 Series Dim Inches Millimeter Minimum Maximum Minimum Maximum Notes A B C D F G H J K M R T AA 1 1.050 -4.30 .610 .213 -.344 .276 .465 -1.426 .427 - .407 OD 1. 3 / 8 - 2 4 UNF-3A 2. Full threads within 2 1 /2 threads

Contextual Info: 1N4588 R thru 1N4593(R) Silicon Standard Recovery Diode VRRM = 200 V - 1400 V IF =150 A Features • High Surge Capability • Types up to 1400 V VRRM DO-8 Package "R" Orientation Standard 2 2 1 2 2 1 1 1 Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

BROWN BOVERI

Abstract: FMC R4310 N3296 FMC S4310 n4595 R4340 S43120 1N4587 R4310 S4310
Contextual Info: BROWN BOVERI BBC •FMC B R O W N , E 30V E R I & C IE A K T IE N G E S E L L S C H A F T M A N N H E IM Silicon Power Rectifiers G eschäftsbereich H albleiter und S trom rich te r T elefon 06206 503-1, T ele x 0 4 -6 5 7 2 7 Postfach 200, D -6840 Lam pertheim

Contextual Info: 1N4588 R thru 1N4593(R) Silicon Standard Recovery Diode VRRM = 200 V - 800 V IF =150 A Features • High Surge Capability • Types from 200 V to 800 V VRRM DO-8 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode.

tic 1060

Abstract: S4330 1N4588 1N3295A
Contextual Info: Silicon Power Rectifier S / R 4 3 Series Dim. Inches ~H M h - Minimum Maximum Minimum Maximum Notes AA B »I A B C D F G H J K M R T AA -c— - J I L- - r . I T-rr 1 A < A 1 ^ DD DD cc Notes: 1. 3 / 8 - 2 4 U N F-3A 2. Full threads within 2 1 /2 threads

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

1N404B

Contextual Info: discrete devices jemitronicr hot line TOLL FREE NUMBER 800-777-3960 silicon rectifiers cont'd stud m ounted silicon power rectifiers DO-5 case style — co n t’d Typ« Maximum Maximum Average Peak Forward Reverse Current (Amps) Voltage Case (volts) Temp. (°C)

1N2436

Abstract: 1N2437 1N2438 1N2439 1N2440 1N3288A 1N3289A 1N4587 S4310 S4320
Contextual Info: Silicon Power Rectifier S/ R 4 3 Seríes Dim. Inches M illim eter Minimum Maximum Minimum Maximum Notes A B C D F G H J K M R T AA ♦S4310 •S4320 ♦S4330 _ 1 .0 6 0 1.166 4 .7 0 .6 4 0 .2 3 3 .7 4 5 .3 7 3 .2 8 6 .6 7 0 .8 5 0 2 6 .6 7 - 4 .3 0 .610

Contextual Info: 1N4588 R thru 1N4593(R) Silicon Standard Recovery Diode VRRM = 200 V - 1400 V IF =150 A Features • High Surge Capability • Types up to 1400 V VRRM DO-8 Package "R" Orientation Standard 2 2 1 2 1 2 1 1 Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

1N3289A

Abstract: S4320 1N2436 1N2437 1N2438 1N2439 1N2440 1N3288A 1N4587 S4310
Contextual Info: Silicon Power Rectifier S / R 4 3 Series :° > i H Mh I AA B » I ♦S4330 Peak Reverse Voltage JEDEC Numbers Microsemi Catalog Number 1N2436 1N2437 1N2438 1N2439 1N2440 1N2441 1N2442 1N2443 1N2444 1N2445 1N3288A _ _ _ 1.050 1.060 1.166 4.70 .640 .233

S/R43 SERIES

Abstract: 1N2436 1N2437 1N2438 1N2439 1N2440 1N3288A 1N3289A 1N4587 S4310
Contextual Info: Silicon Dower Rectifier s / R4I-3 Series —I MI— <0>I A B C D F G H J K M R T AA PP DD I - C - Notes: 1. 3 / 8 - 2 4 U N F-3A 2. Full threads within 2 1 /2 threads 3. Accepts 1 / 4 - 2 8 UNF-2B Nut 4. Reverse polarity: Stud is Anode ♦S4320 ♦S4330

IN4054R

Abstract: IN4048R IN4045 1N2131 IN3294 B 1186a 1N1202 1N1201 IN4056R IN4048
Contextual Info: S E M IC O N D U C T O R S IN C CHE D f fil3 b tiS 0 Q DO DSbB 0 | Silicon Power Rectifiers 6 AMP - D04 Peak Reverse Voltage JEDEC Numbers 1N1341, 1N1612, 1N1342, 1N1613, 1N1341A, 1N1341B, 1N1581, 1N2228, 1N2491 1N1342A, 1N1342B, 1N1582, 1N2492 1N1343, 1N1343A, 1N1343B

1N4588R

Abstract: 1N4588
Contextual Info: 1N4588 R thru 1N4593(R) Silicon Standard Recovery Diode VRRM = 200 V - 1400 V IF =150 A Features • High Surge Capability • Types up to 1400 V VRRM DO-8 Package "R" Orientation Standard 2 2 1 2 1 2 1 1 Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

BA100 diode

Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any

1N4539

Abstract: SOLID STATE INC 1N4588 1N2438 1N1396 1N1397 1N1398 1N2426 1N2427 1N2428
Contextual Info: Silicon Power Rectifier D08 NOTES: 1. T he devtce w ith ex ce p tio n 0< Che h u a j c « . ttw e a d j n d fU itb U '»*<3 e x ten sio n lie* w ith in th e c y lin d e r d«1w>til b y 0 « n u 1 .0 6 3 M U a . and le n g th 2 .S 0 0 W ax. 2 . A n g u la r o rie n ta tio n e f U f m iiU l w it h m p e c t ta i w x i j c n i l p o rtio n

1N4595

Contextual Info: S O L I D S T A T E IN C . 46 FARRAND STREET BLOOMFIELD, NEW JERSEY 07003 www.solidstateinc.com N O TE S : 1. D08 The device w ith exception of the hexagon, thread and flex ib le lead extension lies w ith in the cylinder defined by O im . 1.0 6 3 M a x . and