1N1672 Search Results

Contextual Info: 1N1672 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current240 @Temp (øC) (Test Condition)120# V(RRM)(V) Rep.Pk.Rev. Voltage150“ I(FSM) Max.(A) Pk.Fwd.Sur.Cur.1.8k V(FM) Max.(V) Forward Voltage1.25 @I(FM) (A) (Test Condition)300 @Temp. (øC) (Test Condition)25õ

1N1662

Abstract: 1N2056 1N1660 1N1661 1N1670 1N1671 1N2054 1N3260 1N4044 1N4045
Contextual Info: Silicon Power Rectifier 1N4044—1N4056 Dim Inches M illim eter Minimum Maximum Minimum Maximum N otes A B C D F G H J K M R S 1.218 1.350 5 .30 0 .793 .300 -.660 .338 .665 -.050 3 /4 -1 6 1.250 1.375 5 .90 0 .8 28 .3 25 .9 00 .749 .3 48 .755 1.100

1N2063

Abstract: 1N1671 1N404 1N4047 1n*049 LN2054 1N1660 1N1661 1N1670 1N3260
Contextual Info: Silicon Power Rectifier 1N4044—1N4056 Dim Inches Millimeter Minimum Maximum Minimum Maximum Notes A B C D F G H J K M R S Notes: 1. Full threads within 2—1 /2 threads 2. Standard polarity: Stud is Cathode Reverse polarity: Stud is Anode 1N1660 1N1661 1N1662

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

Contextual Info: Standard Recovery Rectifiers Micmsemi I Part N u m b e r M ic ro s e m i Package D iv is io n O u tlin e Type Mil Data IO VR IFSM V F @ IO IR trr Spec S h e e t lD Am ps (Volts) (A m ps) (Volte) (uA) (nsec) 1956 160 -957 160 1958 160 300 350 400 500 600

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

LN2054

Abstract: 1N1660 1N1661 1N1670 1N1671 1N2054 1N2055 1N3260 1N3261 1N4044
Contextual Info: Silicon Power Rectifier N4044—1N4056 rs * 1 Dim ï M illim eter Minimum Maximum Minimum Maximum Notes A B C D F G H J K M R S - c -H Inches M l- 1.218 1.350 5 .300 .793 .300 -.660 .338 .665 -.050 3 / 4 - 1 6 UNF 1.250 3 0.9 4 1.375 34.29 5.900

BA100 diode

Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any

1N2063

Abstract: IN4054 SOLID STATE INC 1N1671 1N167 1N1661 1N2054 1N2055 1N3260 1N3735
Contextual Info: Silicon Power R ectifier DOS NOTES: 1. The device with excep­ tion of the hexagon, thread, and flexible lead extension lies with­ in the cylinder defined by 1.216 and length 3.25. 2 . Angular orientation of terminal with respect to hexagonal portion Is un­

Contextual Info: Dim Inches M illim e te r M inim um M axim um A B C D F G H J K M R S 1.218 1.3 5 0 5 .3 0 0 .7 9 3 .3 0 0 -.6 6 0 .3 3 8 .6 6 5 -.0 5 0 3 /4 - 1 6 1.2 5 0 1.3 7 5 5 .9 0 0 .8 2 8 .3 2 5 .9 0 0 .7 4 9 .3 4 8 .7 5 5 1.100 .120 M inim um M axim um N otes