19NOV2004 Search Results

12 sot23-3

Abstract: TRANSISTOR Outlines 12 sot23 marking code 10 sot23 STM1001SBWX6F STM1001 N1418 13 SOT23-3
Contextual Info: STM1001 Reset circuit Features • Precision monitoring of 3 V, 3.3 V, and 5 V supply voltages ■ Open drain RST output ■ 30 ms or 140 ms reset pulse width min ■ Low supply current - 6 µA (typ) ■ Guaranteed RST assertion down to VCC= 1.0 V ■ Operating temperature:

Contextual Info: EMIF06-10006F2 IPAD 6 line EMI filter and ESD protection Main product characteristics Where EMI filtering in ESD sensitive equipment is required: • Mobile phones and communication systems ■ Computers, printers and MCU Boards Description Flip-Chip

Contextual Info: STM1001 Reset circuit Features • Precision monitoring of 3 V, 3.3 V, and 5 V supply voltages ■ Open drain RST output ■ 30 ms or 140 ms reset pulse width min ■ Low supply current - 6 µA (typ) ■ Guaranteed RST assertion down to VCC= 1.0 V ■ Operating temperature:

WW04

Abstract: TRANSISTOR S 812 STM809 STM810 STM811 STM812 13 SOT23-3 9873
Contextual Info: STM809, STM810 STM811, STM812 Reset circuit Features • Precision monitoring of 3 V, 3.3 V, and 5 V supply voltages ■ Two output configurations – Push-pull RST output STM809/811 – Push-pull RST output (STM810/812) ■ 140 ms reset pulse width (min)

MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Abstract: DAP7 CSTCR4M00G55A-R0 CTSR J1850 LQFP100 LQFP64 PQFP100 ST92F150JDV1 ST92F250CV2
Contextual Info: ST92F124/ST92F150/ST92F250 8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TM EMULATED EEPROM , CAN 2.0B AND J1850 BLPD • Memories – Internal Memory: Single Voltage FLASH up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E3 TM (Emulated EEPROM) – In-Application Programming (IAP)

E2 nand flash

Abstract: st nand flash application note NAND512R4A NAND512W3A NAND256W3A NAND512W3B AN1759 NAND128R3A NAND128R4A NAND128W3A
Contextual Info: AN1759 APPLICATION NOTE How to Connect Single Level Cell NAND Flash Memories to Build Storage Modules This application note explains how to connect two or more Single Level Cell NAND Flash memories to a microcontroller system bus, to build storage modules.

ceramic capacitor, .1uF

Abstract: 0.1uF Capacitor Ceramic capacitor 0.1uf MBRS240 Vishay capacitor LM3671-ADJ 6MB390EXR BAT54H DO1608C-472 SMT power inductor
Contextual Info: N Altera Cyclone Complete Reference Design 3.3V in; 1.5V @ 1A out Vccint and 1.8V @ 600mA (Vccio) Designator Part Type Manufacturer Part No Description C1 C2 C3 C4 C5 C6 C7 C8 C9 D1 D2 L1 L2 P1 P2 P3 R1 R2 R3 R4 U1 U2 VISHAY CRCW0805Y104KXXA SANYO 6MB390EXR

PxC00

Abstract: MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR CORE F5A ST92F124V1QB f2f decoder ic Transistor 952 1075-1 lta8 f5b FERRITE bead f2f decoder ic speed F90 P02
Contextual Info: ST92F124/ST92F150/ST92F250 8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TM EMULATED EEPROM , CAN 2.0B AND J1850 BLPD • Memories – Internal Memory: Single Voltage FLASH up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E3 TM (Emulated EEPROM) – In-Application Programming (IAP)

DTV1500HD

Abstract: DTV1500HDFP
Contextual Info: DTV1500HD CRT TV HORIZONTAL DEFLECTION HIGH VOLTAGE DAMPER DIODE Table 1: Main Product Characteristics IF(AV) 6A VRRM 1500 V Tj 175°C VF (typ) 1.0 V trr (typ) 150 ns VFP (typ) 21 V K A FEATURES AND BENEFITS • ■ ■ ■ ■ ■ ■ A K High breakdown voltage capability

2901 jrc

Abstract: jrc 2901 TRANSISTOR SMD MARKING CODE 3401 AN1900 ST7DALI 0X00 AN1324 HE10 SO20 6 pin TRANSISTOR SMD CODE 21
Contextual Info: ST7DALI 8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, TIMERS, SPI, DALI Memories – 8 Kbytes single voltage Flash Program memory with read-out protection, In-Circuit Programming and In-Application programming ICP and IAP . 10K write/erase cycles guaranteed, data retention: 20 years at 55°C.

Contextual Info: DTV1500HD CRT TV HORIZONTAL DEFLECTION HIGH VOLTAGE DAMPER DIODE Table 1: Main Product Characteristics IF(AV) 6A IFpeak (max) 12 A VRRM 1500 V Tj 175°C VF (typ) 1.0 V trr (typ) 150 ns VFP (typ) 21 V K A ) s ( t c u d o ) r s ( P t c e t u e d l o o r

AT91EB40

Abstract: AT91M40800 TQFP100
Contextual Info: Features • Incorporates the ARM7TDMI ARM® Thumb® Processor Core • • • • • • • • • • • – High-performance 32-bit RISC Architecture – High-density 16-bit Instruction Set – Leader in MIPS/Watt – Embedded ICE In-Circuit Emulation

st microelectronics datecode

Abstract: EMIF06-10006F2 AN1235 AN1751 EMIF06
Contextual Info: EMIF06-10006F2 6 LINES EMI FILTER AND ESD PROTECTION IPAD MAIN PRODUCT CHARACTERISTICS Where EMI filtering in ESD sensitive equipment is required: • Mobile phones and communication systems ■ Computers, printers and MCU Boards ® DESCRIPTION The EMIF06-10006F2 is a highly integrated

Contextual Info: STM809, STM810 STM811, STM812 Reset circuit Features • Precision monitoring of 3 V, 3.3 V, and 5 V supply voltages ■ Two output configurations – Push-pull RST output STM809/811 – Push-pull RST output (STM810/812) ■ 140 ms reset pulse width (min)

Contextual Info: ST92F124xx/ST92F150Cxx/ ST92F150JDV1/ST92F250CV2 8/16-bit single voltage Flash MCU family with RAM, E³ TM emulated EEPROM , CAN 2.0B and J1850 BLPD Datasheet − production data Features • Memories – Internal memory: Single Voltage Flash up to 256 Kbytes, RAM up to 8 Kbytes, 1 Kbyte E3 TM

jrc 2072

Abstract: jrc 2073
Contextual Info: ST7DALIF2 8-bit MCU family with single voltage Flash memory, data EEPROM, ADC, timers, SPI, DALI Features • ■ Memories – 8 Kbytes single voltage Flash Program memory with readout protection, In-Circuit Programming and In-Application programming ICP and IAP . 10K

ST MICROELECTRONICS

Abstract: st microelectronics datecode AN1235 AN1751 EMIF06 EMIF06-10006F2 JESD97
Contextual Info: EMIF06-10006F2 IPAD 6 line EMI filter and ESD protection Main product characteristics Where EMI filtering in ESD sensitive equipment is required: • Mobile phones and communication systems ■ Computers, printers and MCU Boards Description Flip-Chip

dolby pro logic 2

Abstract: STV8218 dbx 215 equalizer Dolby prologic II simple deep bass amplifier 1412S stv8278 virtual surround dsp mcu DBX 202 SDIP64
Contextual Info: STV82x8 Digital audio decoder/processor for BTSC television/video recorders Features • ■ ■ ■ ■ ■ Fully automatic multi-standard demodulation – M/N standards – FM mono – BTSC US MTS stereo and SAP standards Multi-channel capability – 3 x I²S digital inputs

IFR 630 MF

Abstract: 4-bit parity checker mark/space odd/even DAP7 50 led flasher circuit with pdf format f2f decoder ic 2203F xck-p 5.5v 1.0f body marking MCL CSTCR4M00G55A-R0
Contextual Info: ST92F124xx ST92F150Cxx ST92F150JDV1 ST92F250CV2 8/16-bit single voltage Flash MCU family with RAM, E³ emulated EEPROM , CAN 2.0B and J1850 BLPD • Memories – Internal Memory: Single Voltage Flash up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E3 TM (Emulated EEPROM)

IFR 630 MF

Abstract: MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR AN1152 basic stamp BS2 china tv schematic diagram CSTCR4M00G55A-R0 DAP7 STIM 202 diode MARKING f54 PQFP100
Contextual Info: ST92F124/ST92F150/ST92F250 8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TM EMULATED EEPROM , CAN 2.0B AND J1850 BLPD • Memories – Internal Memory: Single Voltage FLASH up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E3 TM (Emulated EEPROM) – In-Application Programming (IAP)

MA1705

Contextual Info: TPS70145, TPS70148 TPS70151, TPS70158 TPS70102 www.ti.com SLVS222D – DECEMBER 1999 – REVISED NOVEMBER 2004 Dual-Output Low-Dropout Voltage Regulators with Power-Up Sequencing for Split-Voltage DSP Systems FEATURES • • • • • • • • • •

ICE2 asic

Contextual Info: Features • Incorporates the ARM7TDMI ARM® Thumb® Processor Core • • • • • • • • • • • – High-performance 32-bit RISC Architecture – High-density 16-bit Instruction Set – Leader in MIPS/Watt – Embedded ICE In-Circuit Emulation

stv 4326

Abstract: Inventec KNOCKHILL 10 inventec knockhill 10a CV136 AD30/stv 4326 ACDL B1413-1 ati sb400 FDS6900S
Contextual Info: KNOCKHILL 10A PreMP BUILD EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV SIZE = 3 FILE NAME : XXXX-XXXXXX-XX P/N XXXXXXXXXXXX INVENTEC TITLE VER : Knockhill 10A SIZE CODE A3 REV DOC. NUMBER X01 CS SHEET 1 OF 50 TABLE OF CONTENTS PAGE

BAT54

Abstract: RC410M BAT54C3 27b4 INVENTEC SP8K10SFD5_ROHM ATI SB450 KNOCKHILL 10 12ah3 P19E-6
Contextual Info: San Antonio 10E PreMP BUILD EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV SIZE = 3 FILE NAME : XXXX-XXXXXX-XX P/N XXXXXXXXXXXX INVENTEC TITLE VER : Knockhill 10A SIZE CODE A3 DOC. NUMBER REV X01 CS SHEET 1 OF 50 TABLE OF CONTENTS PAGE