19MAY06 Search Results

Contextual Info: 4 3 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. COPYRIGHT 2 LOC DIST AD 00 ALL RIGHTS RESERVED. R E V IS IO N S LTR A DESCRIPTION REVISED PER E C 0 - 0 5 - 0 1 5 3 8 0 DATE DWN APVD 19MAY06 SK MS D D BUSHING KEY 2.

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. COPYRIGHT 2 ALL RIGHTS RESERVED. LOC DIST AD 00 R E V IS IO N S LTR DESCRIPTION DATE ECO 05 0 1 2 2 1 2 DWN 19MAY06 APVD BSV RD D D C C NOTES: INSULATOR: THERMOPLASTIC POLYSTER,

Contextual Info: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 2 - LOC DIST AD 00 ALL RIGHTS RESERVED. R E V IS IO N S P LTR A DESCRIPTION ECO 05 DATE 014280 DWN 19MAY06 APVD BSV MS D D 1 \ BUSH ING/GUARD: METAL BUTTON: THERMOPLASTIC

Contextual Info: 3 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED BY TYCO ELECTRONICS CORPORATION. FOR PUBLICATION - 2 - ALL RIGHTS RESERVED. LOC DIST AD 00 REVISIONS LTR RECOMMENDED DESCRIPTION REVISED PER E C Q - 0 5 - 0 1 2 2 2 6 DATE DWN APVD 1 9 MAYO6 GS MS PANEL CUTOUT

sd diode sod-323

Abstract: B0520LWS B0530WS B0540WS
Contextual Info: B0520LWS B0530WS/B0540WS Surface Mount Schottky Barrier Diode P b Lead Pb -Free Features: SCHOTTKY DIODE 500 mAMPERS 20-40 VOLTS * Low Forward Voltage Drop * Guard Ring Construction forTransient Protection * High Conductance 1 2 Mechanical Data: * Case: SOD-323

PCM80PD02

Abstract: EN61000-3-3 pcm120
Contextual Info: AC-DC 50/80/120 Watts xppower.com PCM Series • 4000 VAC Isloation • Low Leakage Current • Single, Dual and Triple Outputs • Worldwide Medical Approvals • CCC Approved PCM80 • Both Line and Neutral Fused • Non-standard Connectors Available Specification

AT73C239

Abstract: AT73C238 at73c
Contextual Info: Hibernate Mode in the AT73C238/AT73C239 1. Scope This application note decribes the hibernate mode for the AT73C238/AT73C239. 1.1 Power Management Reference Documents Table 1-1 gives the references of the documents and their denominations in this document.

1N4005GP

Abstract: 1N4001GP
Contextual Info: 1N4001GP thru 1N4007GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for High Reliability application • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current, typical IR less than 0.1 µA

1N5394

Abstract: 1n5393
Contextual Info: 1N5391 thru 1N5399 Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward surge capability • Solder Dip 260 °C, 40 seconds • Component in accordance to RoHS 2002/95/EC

Contextual Info: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2006 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 2 MAY ,2006- LOC ALL RIGHTS RESERVED. E REVISIONS DIST B P /l\ PACK IN ACCORDANCE WITH AMP SPEC 107-3275 A 100 TRAY PACK IN ACCORDANCE WITH AMP SPEC 107- 3275

EX39

Abstract: URM43 500cyclesmin
Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2006 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. MAY ,2006- LOC ALL RIGHTS RESERVED. E DIST R E V IS IO N S B LTR C NOTES: A PACK IN ACCORDANCE WITH AMP SPEC 107- 3275 A 100 TRAY PACK IN ACCORDANCE WITH AMP SPEC 107-3275

Contextual Info: 1N4245GP thru 1N4249GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for High Reliability application • Cavity-free glass-passivated junction • Low forward voltage drop ed* t n e Pat *Glass Encapsulation

M100M

Abstract: M100A M100B M100D M100G M100J M100K
Contextual Info: M100A thru M100M Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward surge capability • Solder Dip 260 °C, 40 seconds • Component in accordance to RoHS 2002/95/EC

Contextual Info: GP08A thru GP08J Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for High Reliability application • Cavity-free glass-passivated junction • Low forward voltage drop ed* t n e Pat *Glass Encapsulation

DO-204AL

Abstract: GI250-1 GI250-4 JESD22-B102D J-STD-002B
Contextual Info: GI250-1 thru GI250-4 Vishay General Semiconductor High Voltage Glass Passivated Junction Rectifier FEATURES • Superectifier structure for High Reliability application • Cavity-free glass-passivated junction • Low leakage current ed* t n e Pat *Glass Encapsulation

GP02-40

Abstract: 20E-3 DO-204AL GP02-20 JESD22-B102D J-STD-002B
Contextual Info: GP02-20 thru GP02-40 Vishay General Semiconductor High Voltage Glass Passivated Junction Rectifierr FEATURES • Superectifier structure for High Reliability application • Cavity-free glass-passivated junction ed* t n e Pat *Glass Encapsulation technique is covered by

Contextual Info: 3 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED BY TYCO ELECTRONICS CORPORATION. FOR PUBLICATION - 2 - ALL RIGHTS RESERVED. LOC DIST AD 00 REVISIONS LTR RECOMMENDED DESCRIPTION REVISED PER E C Q - 0 5 - 0 1 2 2 2 8 DATE DWN APVD 1 9 MAYO6 GS MS PANEL CUTOUT

IHLP-2525EZ-01

Contextual Info: IHLP-2525EZ-01 Vishay Dale Low Profile, High Current Inductor FEATURES • • • • • Shielded construction Frequency range below 1 MHz Lowest DCR/µH, in this package size Powdered iron composition provides soft saturation RoHS Handles high transient current spikes without hard COMPLIANT

Contextual Info: F1779 Vishay Roederstein AC-Capacitors, Suppression Capacitors Class X2 AC 275 V Code pos. 9 = 2 (MKT) Dimensions in mm W Max. L Max. Product is completely lead (Pb)-free Product is RoHS compliant P LEAD LENGTH X (mm) CODE POS. A 30+5 B 40+5 C 50+5 E 60+5

BAS70WS

Contextual Info: BAS70WS Surface Mount Schottky Barrier Diode P b Lead Pb -Free Features: * LOW Turn-on Voltage * Fast Switching * PN Junction Guard for Transient and ESD Protection * Designed for Surface Mount Application Mechanical Data: * Case: SOD-323, * Plastic Material –UL Recognition Flammability Classification 94V-O

Contextual Info: GI250-1 thru GI250-4 Vishay General Semiconductor High Voltage Glass Passivated Junction Rectifier FEATURES • Superectifier structure for High Reliability application • Cavity-free glass-passivated junction • Low leakage current ed* t n e Pat *Glass Encapsulation

Contextual Info: BYD13DGP thru BYD13MGP New Product Vishay General Semiconductor Avalanche Glass Passivated Junction Rectifier FEATURES • Cavity-free glass-passivated junction • Avalanche surge capability guaranteed • Low forward voltage drop ed* t n e Pat *Glass Encapsulation

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 RELEASED BY TYCO ELECTRONICS CORPORATION. FOR PUBLICATION - 2 - ALL RIGHTS RESERVED. LOC DIST AD 00 REVISIONS LTR DESCRIPTION REVISED PER E C O - 0 5 - 0 1 2 26 9 DATE DWN APVD 1 9 MAYO6 GS MS NOTES: D D 1. MEETS

9445n

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2006 RELEASED FOR PUBLICATION MAY ,2006- LOC ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. E DIST R E V IS IO N S B LTR C NOTES: /l\ PACK IN ACCORDANCE WITH AMP SPEC 107-3275 /K 100 TRAY PACK IN ACCORDANCE WITH AMP SPEC 107- 3275