1998F Search Results

29057

Abstract: intel 4269
Contextual Info: 28F002BC 2-MBIT 256K X 8 BOOT BLOCK FLASH MEMORY • High Performance Read — 80/120 ns Max. Access Time 40 ns Max. Output Enable Time a Low Power Consumption — 20 mA Typical Read Current ■ x8-Only Input/Output Architecture — Space-Constrained 8-bit

FMMT449

Abstract: ssot3
Contextual Info: FMMT449 FMMT449 C E B SuperSOTTM-3 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Sourced from Process NB. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

MVL-10

Abstract: LTC1998IS6 MO-193 BAT54C LTC1998 LTC1998C LTC1998CS6 LTC1998I
Contextual Info: LTC1998 2.5µA, 1% Accurate SOT-23 Comparator and Voltage Reference for Battery Monitoring DESCRIPTION FEATURES n n n n n n n High Accuracy Trip Voltage: 1% Max Error Using External 1% Resistors Adjustable Threshold Voltage and Hysteresis Quiescent Current: 2.5 A Typ

TE28F160S5-70

Abstract: 29048 dt28f160s570 290609-003
Contextual Info: WORD-WIDE FlashFile MEMORY FAMILY 28F160S5, 28F320S5 Includes Extended Temperature Specifications • ■ ■ Cross-Compatible Command Support Tw o 32-Byte Write Butters — 2 ¡as per Byte Effective Program m ing Tim e — Intel Standard Com m and Set

si2301

Abstract: LTC1998 LTC1998C LTC1998CS6 LTC1998I LTC1998IS6 MO-193 SI2301 application
Contextual Info: LTC1998 2.5µA, 1% Accurate SOT-23 Comparator and Voltage Reference for Battery Monitoring U FEATURES • ■ ■ ■ ■ ■ ■ DESCRIPTIO High Accuracy Trip Voltage: 1% Max Error Using External 1% Resistors Adjustable Threshold Voltage and Hysteresis Quiescent Current: 2.5µA Typ

Contextual Info: FMMT449 FMMT449 C E B SuperSOTTM-3 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Sourced from Process NB. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: LTC1998 2.5µA, 1% Accurate SOT-23 Comparator and Voltage Reference for Battery Monitoring DESCRIPTION FEATURES n n n n n n n High Accuracy Trip Voltage: 1% Max Error Using External 1% Resistors Adjustable Threshold Voltage and Hysteresis Quiescent Current: 2.5µA Typ

Contextual Info: FMMT449 F A IR C H IL D SEM IC ONDUCTO R tm FMMT449 B SuperS0T -3 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Sourced from Process NB. Absolute Maximum Ratings*

FMMT449

Contextual Info: FMMT449 FMMT449 C E B SuperSOTTM-3 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Sourced from Process NB. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

BAT54C

Abstract: LTC1998 LTC1998C LTC1998CS6 LTC1998I LTC1998IS6 MO-193
Contextual Info: LTC1998 2.5µA, 1% Accurate SOT-23 Comparator and Voltage Reference for Battery Monitoring DESCRIPTION FEATURES n n n n n n n High Accuracy Trip Voltage: 1% Max Error Using External 1% Resistors Adjustable Threshold Voltage and Hysteresis Quiescent Current: 2.5 A Typ