198MM Search Results

Contextual Info: SPECIFICATION Part No. : TG.25.2113 Product Name : 2dBi quad-band cellular dipole terminal antenna hinged SMA M Feature : High gain dipole terminal antenna RoHS Compliant 198mm Straight/ 174mm @90° Version A Date Page Revision Description Prepared Approved

vestel

Abstract: AI-0031F CON002 IP4L100006 LG.Philips LCD lcd Inverter vestel
Contextual Info: HR IP4L100006 INVERTER ORIGINAL REFER. EQUIVAL. AI-0031F FE5319C249G0885 Dimensiones / size : 198mm x 123mm 1 12V Conector Control / Control Connector CON002 2 3 4 5 6 7 8 9 10 11 12V GND GND 5V 5V GND 5V on-off Br. A N.C. LCD panel manuf. LG-PHILIPS Marca / Brand

HRC fuse gg

Abstract: BS88 fuse curve HRC fuse d type GH1000 GH1250 GH710 GH800 SB98107 bussmann hrc fuse bs88
Contextual Info: Bussmann Industrial HRC Fuse GH 84 x 198mm, BS88, IEC 269-1 Center Bolted Tags 710 800 1000 1250 Time-Current Characteristic Curve Full Size Curves Available CURRENT RATING 10,000 1,000 CATALOG SYMBOL: GG INDUSTRIAL HRC FUSE CENTER BOLTED TAGS PACKAGE QUANTITY: 1

pico psu

Contextual Info: CHASSIS PLATFORMS HA COM RUGGED EMbEDDED COMPUTInG PRODUCTS SYSTEM ACCESSORIES bACKPLAnES COMPOnEnTS PICMG: MicroTCA Products and Services Elma Electronic • www.elma.com Rev. 3 - 1.10 Elma Electronic ELMA PRODUCT DIVISIOnS Systems WHO IS ELMA ELECTROnIC

1N4728A

Abstract: 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A 1N4764A
Contextual Info: WTE POWER SEMICONDUCTORS 1N4728A – 1N4764A Pb 1.0W ZENER DIODE Features Planar Die Construction 1.0 Watt Power Dissipation 3.3 – 100V Nomimal Zener Voltage 5% Standard Vz Tolerance Low Inductance Typical IR Less Than 5.0µA Above 11V Plastic Case Material Has UL Flammability

Diode 1n4934

Abstract: 1N4937 1N4937 diode 1N4933-1N4937 1N4933 1N4933-T3 1N4933-TB 1N4934 1N4935 1N4936
Contextual Info: 1N4933 – 1N4937 WTE POWER SEMICONDUCTORS Pb 1.0A FAST RECOVERY DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: DO-41, Molded Plastic

HER 300 diode

Abstract: 101G 103G 105G 106G HER101G HER108G her105g diode
Contextual Info: HER101G – HER108G WTE POWER SEMICONDUCTORS Pb 1.0A GLASS PASSIVATED ULTRAFAST DIODE Features ! Glass Passivated Die Construction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data

diode sf14

Abstract: SF173 RS-296-E SF12 SF13 SF14 SF15 SF16 SF17 ASF15
Contextual Info: SF11 – SF17 WTE POWER SEMICONDUCTORS Pb 1.0A SUPERFAST DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: DO-41, Molded Plastic

02 diode R-1

Abstract: 1H8 DIODE diode case R-1 RS-296-E 02 diode case R-1 DIODE 1H7 1H3-TB
Contextual Info: 1H1 – 1H8 WTE POWER SEMICONDUCTORS Pb 1.0A ULTRAFAST DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: R-1, Molded Plastic

Contextual Info: The NodeBuilder FX Development Tool is a complete hardware and software platform for creating LONWORKS devices based on the Series 5000 and 3100 Neuron Processors and the Series 5000 and 3100 Smart Transceivers. NodeBuilder® FX Development Tool A Complete Platform for

Contextual Info: 2EZ2.7D5 – 2EZ330D5 2.0W ZENER DIODE WON-TOP ELECTRONICS Pb Features  Glass Passivated Die Construction       2.0W Power Dissipation 2.7V – 330V Nominal Zener Voltage 5% Standard Vz Tolerance Low Inductance For Use in Voltage Regulator or Reference

Contextual Info: 1H1 – 1H8 1.0A ULTRAFAST DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Forward Voltage Drop High Surge Current Capability High Reliability Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

Contextual Info: 1N4933G – 1N4937G 1.0A GLASS PASSIVATED FAST RECOVERY DIODE WON-TOP ELECTRONICS Pb Features  Glass Passivated Die Construction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability B A A Mechanical Data

Contextual Info: SF11 – SF17 1.0A SUPERFAST DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Forward Voltage Drop High Surge Current Capability High Reliability Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

Contextual Info: BY133 1.0A HIGH VOLTAGE STANDARD DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability B A A Mechanical Data       

Contextual Info: 1N4001 – 1N4007 WTE POWER SEMICONDUCTORS Pb 1.0A STANDARD DIODE Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data C Case: DO-41, Molded Plastic Terminals: Plated Leads Solderable per

Contextual Info: 1N4933 – 1N4937 WTE POWER SEMICONDUCTORS Pb 1.0A FAST RECOVERY DIODE Features  Diffused Junction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data        C Case: DO-41, Molded Plastic

Zener Diode LF marking

Abstract: 1N4728A 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A 1N4764A 1n4728atb
Contextual Info: WTE POWER SEMICONDUCTORS 1N4728A – 1N4764A Pb 1.0W ZENER DIODE Features Glass Passivated Die Construction 1.0 Watt Power Dissipation 3.3 – 100V Nomimal Zener Voltage 5% Standard Vz Tolerance Low Inductance Typical IR Less Than 5.0µA Above 11V Plastic Case Material Has UL Flammability

echelon FT-x3

Abstract: power wizard 1.0 module neuron 5000 neuron user guide IP-852 LTM-10A 10020R-40-24 SPI RS232 chips 078-04-05-01 Neurowire SPI
Contextual Info: The NodeBuilder FX Development Tool is a complete hardware and software platform for creating LONWORKS devices based on the Series 5000 and 3100 Neuron Processors and the Series 5000 and 3100 Smart Transceivers. NodeBuilder® FX Development Tool A Complete Platform for

Contextual Info: SB220S – SB2100S WTE POWER SEMICONDUCTORS Pb 2.0A SCHOTTKY BARRIER DIODE Features  Schottky Barrier Chip  Guard Ring Die Construction for Transient Protection  High Current Capability A B  Low Power Loss, High Efficiency  High Surge Current Capability

DIODE 1N4004G

Abstract: 1N4005G 1N4006G 1N4001G 1N4007G 4002G 4005G 4006G 1N4007G-TB diode 1N4007G
Contextual Info: 1N4001G – 1N4007G WTE POWER SEMICONDUCTORS Pb 1.0A GLASS PASSIVATED STANDARD DIODE Features ! Glass Passivated Die Construction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data

Contextual Info: SF11 – SF17 WTE POWER SEMICONDUCTORS Pb 1.0A SUPERFAST DIODE Features  Diffused Junction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data        C Case: DO-41, Molded Plastic

Contextual Info: 1A1 – 1A7 WTE POWER SEMICONDUCTORS Pb 1.0A STANDARD DIODE Features  Diffused Junction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data        C Case: R-1, Molded Plastic

Contextual Info: SB120 – SB1100 WTE POWER SEMICONDUCTORS Pb 1.0A SCHOTTKY BARRIER DIODE Features  Schottky Barrier Chip  Guard Ring Die Construction for Transient Protection  High Current Capability A B  Low Power Loss, High Efficiency  High Surge Current Capability