193MM Search Results

Si4450DY

Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z
Contextual Info: Si4450DY 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

SI9955DY

Abstract: fairchild NDS 1182
Contextual Info: Si9955DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

FDS9953A

Abstract: 9953A CBVK741B019 F011 F63TNR F852 L86Z
Contextual Info: FDS9953A Dual 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive

FDC6331L

Abstract: SSOT-6 ZENER SINGLE COLOR CODE FDC633N 125OC AN1030 CBVK741B019 F63TNR
Contextual Info: FDC6331L Integrated Load Switch Features General Description • –2.8 A, –8 V. RDS ON = 55 mΩ @ V GS = –4.5 V RDS(ON) = 70 mΩ @ V GS = –2.5 V RDS(ON) = 100 mΩ @ V GS = –1.8 V This device is particularly suited for compact power management in portable electronic equipment where

F63TNR

Abstract: FDFS2P102A soic-8 33a
Contextual Info: FDFS2P102A Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P102A combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.

diode sod123 W1

Abstract: CBVK741B019 F63TNR MMSZ5221B sod123 E2
Contextual Info: SOD-123 Tape and Reel Data SOD123 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SOD123 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated

SSOT-3

Abstract: CBVK741B019 F63TNR FSB649 MMSZ5221B SuperSOTTM -3
Contextual Info: FSB649 FSB649 C E B SuperSOTTM-3 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Sourced from Process NC. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

FDS6688

Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z rca tube 56
Contextual Info: FDS6688 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

FDS9945

Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z 86 diode
Contextual Info: FDS9945 60V N-Channel PowerTrench MOSFET General Description Features • 3.5 A, 60 V. These N Channel Logic Level MOSFET have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

CBVK741B019

Abstract: F011 F63TNR F852 FDS3812 FDS9953A L86Z
Contextual Info: FDS3812 80V N-Channel Dual PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. 3.4 A, 80 V.

CBVK741B019

Abstract: F011 F63TNR F852 FDS6692 FDS9953A L86Z
Contextual Info: FDS6692 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

F852 transistor

Abstract: F852 CBVK741B019 F63TNR PN2222A
Contextual Info: SOT-223 Tape and Reel Data SOT-223 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SOT-223 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated

NDS spec

Abstract: 9959 CBVK741B019 F011 F63TNR F852 FDS9953A L86Z fairchild soic marking fairchild NDS
Contextual Info: SOIC-8 Tape and Reel Data SOIC 8lds Packaging Configuration: Figure 1.0 ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES N NT IO NS AT TERVE PR ECAUTIO OBSE Packaging Description: SOIC-8 parts are shipped in tape. The carrier tape is

fairchild NDS

Abstract: marking w66
Contextual Info: Si4420DY* Single N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

Contextual Info: FDS7764S 30V N-Channel PowerTrench SyncFET General Description Features The FDS7764S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

Contextual Info: Si9936DY Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

Contextual Info: FDS6892AZ Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain

Contextual Info: FDS3601 100V Dual N-Channel PowerTrench MOSFET General Description Features These N-Channel MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

Contextual Info: Si9936DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

Contextual Info: Hardware HARDWARE Par t Number BH1AAWKI T BH2AAWKI T BH1AAAWKI T BH2AAAWKI T BH3AAAWKI T BH4AAAWKI T BS61KI T 1427KR 1448A20 1448R6 1448R8 1448R10 1448R12 1448R14 1590ORI NG-100 1591AC 1591BC 1591CC 1591DC 1591EC 1591GC 1591HC 1591LC 1591SC 1591TC 1591UC 1591VC

D1RW-C13-008

Abstract: Dialight beacon d464 d1rw-c13 led fixture TZC17 L864 L-865 beacon simple traffic light controller 3 led xenon tubes
Contextual Info: L-864 L-865 / L-864 L-810 L-810 LED Based Obstruction Lights LED Lighting Brochure for Obstruction Applications Certified to: FAA AC NO: 150/5345-43F FAA Engineering Brief No. 67 Compliant to: ICAO Annex 14, 4th Edition, July 2004 ICAO Aerodromes Design Manual, Chapter 18

948d

Contextual Info: FC-12A 2 x 2.5 mm MOSFET BGA Tape and Reel Dimensions FC-12A MOSFET BGA Packaging Configuration: Figure 1 Packaging Description: FC-12A MOSFET BGA parts are shipped in tape and reel. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film

Contextual Info: K&L Microwave Product Catalog Table of Contents ◆ About K&L Microwave 4 ◆ ◆ Terms & Definitions 8 ◆ Suspended Substrate ◆ Specifying Filters 10 ◆ Topology vs. Frequency Range 14 ◆ Lumped Components 17  K L-fil Ceramic Filters E 71 -Bandpass — SB Series

CBVK741B019

Abstract: F011 F63TNR F852 FDS4501H FDS9953A L86Z
Contextual Info: FDS4501H Complementary PowerTrench Half-Bridge MOSFET General Description Features This complementary MOSFET half-bridge device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate