190MA Search Results

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors BR series BRC2016T680K Features Item Summary 68 H(±10%), 200mA, 190mA, 0806 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions

K0032

Abstract: Y255 QN22
Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 001772A flflö ■ S M û K KM741006J CMOS SRAM 262,144 Words x 4-Bit Synchronous Static Random Access Memory FEATURES • Fast Access Time: 10, 12.5, 15ns Max. • Low Power Dissipation KM741006J-10: 190mA (Max.)

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors BR series BRC2016T680K Features Item Summary 68 H(±10%), 200mA, 190mA, 0806 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions

syncronous

Abstract: KM741006J-10 256kx4 256Kx4 SRAM
Contextual Info: KM741006J 256Kx4 Syncronous SRAM 262,144 Words x 4-Bit Synchronous Static Random Access Memory FEATURES • Fast Cycle Time: 10, 12.5, 15ns Max. • Low Power Dissipation KM741006J-10: 190mA (Max.) KM741006J-12: 180mA (Max.) KM741006J-15: 150mA (Max.) • Single 5V ± 5% Power Supply

Contextual Info: Advanced Information KM74B4006 1M x 4 Syncronous SRAM 1,048,576 Words x 4-Bit Synchronous Static Random Access Memory FEATURES GENERAL DESCRIPTION • Fast Cycle Time : 10, 12, 15ns Max. • Low Power Dissipation KM74B4006-10 : 190mA (Max.) KM74B4006-12 : 185mA (Max.)

radioactivity detector

Abstract: matrix led driver rohm 574
Contextual Info: 1/4 ● Structure ● Product Silicon Monolithic Integrated Circuit 7 x 7 Matrix LED DRIVER for Mobile Phone ● Type ● Figure BH6948GU 1. 2. 3. 4. 5. 6. Highly effective Charge Pump circuit that can be switched 1 time, 1.5 times, and 2 times pressure automatically. 190mA / MAX

Contextual Info: KM741006J 256Kx4 Syncronous SRAM 262,144 Words x 4-Bit Synchronous Static Random Access Memory FEATURES GENERAL DESCRIPTION • Fast C y c le Time: 10, 12.5, 15ns Max. • Low Power Dissipation KM741006J-10: 190mA (Max.) KM741006J-12: 180mA (Max.) KM741006J-15: 150mA (Max.)

Contextual Info: SAMSUNG ELECTRONICS INC b?E ]> • 7 T b 4 m 2 GG177EÔ ÔÛÛ KM741006J CMOS SRAM 262,144 Words x 4-Bit Synchronous Static Random Access Memory FEATURES GENERAL DESCRIPTION • Fast Access Time: 10, 12.5, 15ns Max. • Low Power Dissipation KM741006J-10: 190mA (Max.)

Contextual Info: LX5506 TM InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For OFDM operation 64QAM, 54Mbps , the PA provides +18dBm linear output power with a very low EVM (Error-Vector Magnitude) of 3%, and consumes about 190mA total

PVT312LS-T

Abstract: PVT312 PVT312L PVT312LS PVT312S PVT312S-T
Contextual Info: Data Sheet No. PD 10038D Series PVT312 Microelectronic Power IC HEXFET Power MOSFET Photovoltaic Relay Single Pole, Normally Open, 0-250V, 190mA AC/DC General Description The PVT312 Photovoltaic Relay is a single-pole, normally open solid-state relay that can replace

Contextual Info: LX5506 TM InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For OFDM operation 64QAM, 54Mbps , the PA provides +18dBm linear output power with a very low EVM (Error-Vector Magnitude) of 3%, and consumes about 190mA total

Contextual Info: Spec Sheet INDUCTORS High Reliability Application Wire-wound Chip Inductors for Industrial / Automotive Comfort and Safety Applications (CB series) CB2012T100KV Features Item Summary 10 H(±10%), 190mA, 440mA, 0805 Lifecycle Stage Mass Production AEC-Q200 qualified

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CB2012T100K Features Item Summary 10 H(±10%), 190mA, 440mA, 0805 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 3000pcs Products characteristics table External Dimensions

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Inductors LB series LB2012T4R7M Features Item Summary 4.7 H(±20%), 190mA, 0805 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 3000pcs Products characteristics table External Dimensions

Contextual Info: LX5506 TM InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET For OFDM operation 64QAM, 54Mbps , the PA provides +18dBm linear output power with a very low EVM (Error-Vector Magnitude) of 3%, and consumes about 190mA total DC current. At higher supply voltage

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CB2012T470K Features Item Summary 47 H(±10%), 90mA, 190mA, 0805 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 3000pcs Products characteristics table External Dimensions

LX5506LQ-TR

Abstract: LX5506 LX5506LQ
Contextual Info: LX5506 TM InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For OFDM operation 64QAM, 54Mbps , the PA provides +18dBm linear output power with a very low EVM (Error-Vector Magnitude) of 3%, and consumes about 190mA total

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CBC2012T220K Features Item Summary 22 H(±10%), 170mA, 190mA, 0805 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 3000pcs Products characteristics table External Dimensions

Contextual Info: LX5506 TM InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For OFDM operation 64QAM, 54Mbps , the PA provides +18dBm linear output power with a very low EVM (Error-Vector Magnitude) of 3%, and consumes about 190mA total

Contextual Info: LX5506 TM InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For OFDM operation 64QAM, 54Mbps , the PA provides +18dBm linear output power with a very low EVM (Error-Vector Magnitude) of 3%, and consumes about 190mA total

BD1603

Contextual Info: Datasheet 1-Channel 190mA Charge Pump White LED Driver with 1-wire Serial Interface BD1603NUV ●General Description The high-power large current output type LED driver is a white LED driver best suited for applications that require the large current. It is equipped with output voltage and

PVT312L

Abstract: ic 7380 PVT312 PVT312LS PVT312LS-T PVT312S PVT312S-T
Contextual Info: Data Sheet No. PD 10038C Series PVT312 Microelectronic Power IC HEXFET Power MOSFET Photovoltaic Relay Single Pole, Normally Open, 0-250V, 190mA AC/DC General Description PVT312L Features The PVT312 Photovoltaic Relay is a single-pole, normally open solid-state relay that can replace

BRC2518T101K

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors BR series BRC2518T101K Features Item Summary 100 H(±10%), 300mA, 190mA, 1007 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions

Contextual Info: FÉE 8 4 1593 PRELIMINARY KM741006J CMOS SRAM 262,144 Words x 4-Bit Synchronous Static Random Access Memory FEATURES GENERAL DESCRIPTION • Fast Cycle Time: 12,5ns Max. • Low Power Dissipation (mln. Cycle, 100% Duty) KM741006J-12: 190mA • Single 5V ± 5% Power Supply