18P4G Search Results

18p4g

Abstract: DIP18
Contextual Info: 18P4G Plastic 18pin 300mil DIP Lead Material Cu Alloy 10 1 9 E 18 c Weight g 1.3 JEDEC Code – e1 EIAJ Package Code DIP18-P-300-2.54 D A A2 Symbol L A1 SEATING PLANE e b1 b A A1 A2 b b1 c D E e e1 L Dimension in Millimeters Min Nom Max – – 4.5 0.51 –

18P4G

Abstract: 20P2N-A M63805FP M63805KP M63805P
Contextual Info: RY A N I MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL P DESCRIPTION M63805P/FP/KP are eight-circuit Single transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with

18P4G

Abstract: 20P2N-A M54513FP M54513P
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54513P/FP 8-UNIT 50mA TRANSISTOR ARRAY DESCRIPTION M54513P and M54513FP are eight-circuit transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with

M63816FP

Abstract: 18P4G 20P2N-A M63816KP M63816P
Contextual Info: RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63816P/FP/KP IM REL P 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63816P/FP/KP are eight-circuit Single transistor arrays

432W6

Abstract: 48P4B hssop 44P3W-R 28P0 5P5T tsop 2-54 42P9R 70P3S-M 479F7G
Contextual Info: MITSUBISHI INTEGRATED CIRCUIT PACKAGES LIST OF PACKAGE CODES CLASSIFIED ACCORDING TO PIN NUMBER 1. LIST OF PACKAGE CODES CLASSIFIED ACCORIDING TO PIN NUMBER Pin Count Structure Type Lead Pitch mm 5 P P P P P P C C P P P C P P P P P P P P C P P P P P P P

M54564P

Abstract: M54564FP 18P4G pnp 8 transistor array
Contextual Info: 三菱半導体〈トランジスタアレイ〉 M54564P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY 概 要 M54564P/FPはPNPトランジスタとNPNトランジスタで構 成された、8回路の出力ソース形ダーリントントランジスタア

M54563P

Abstract: 18P4G 20P2N-A M54563FP pnp DARLINGTON TRANSISTOR ARRAY pnp 8 transistor array npn 8 transistor array pnp 8 darlington array darlington array pnp transistor array bias
Contextual Info: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54563P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54563FP is an eight-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit performs highcurrent driving with extremely low input-current supply.

M54523

Abstract: pnp 8 transistor array 18P4G 20P2N-A M54583 M54583FP M54583P 8 pin 4v power supply ic
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54583P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54583P and M54583FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor

M54583FP

Abstract: pnp darlington array M54523 PNP DARLINGTON ARRAYS 18P4G 20P2N-A M54583 M54583P pnp 8 transistor array
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54583P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54583P and M54583FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor

18P4G

Abstract: M63806FP M63806KP M63806P
Contextual Info: 三菱半導体〈トランジスタアレイ〉 M63806P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY 概 要 M63806P/FP/KPはNPNトランジスタで構成された8回路 のトランジスタアレイであり、微小入力電流で大電流駆動でき る半導体集積回路です。

Contextual Info: RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63816P/FP/KP IM REL P 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63816P/FP/KP are eight-circuit Single transistor arrays

20P2E-A

Abstract: 18P4G M63805FP M63805KP M63805P transistor kp
Contextual Info: 三菱半導体〈トランジスタアレイ〉 M63805P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY 概 要 M63805P/FP/KPはNPNトランジスタで構成された8回路 のトランジスタアレイであり、微小入力電流で大電流駆動でき る半導体集積回路です。

M54523

Abstract: M54583FP 18P4G 20P2N-A M54583 M54583P pnp 8 transistor array 8-channel PNP darlington array
Contextual Info: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54583P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54583P and M54583FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor

M54585FP

Abstract: M54585P 18P4G 20P2N-A npn 8 transistor array 24 "transistor array" M54585
Contextual Info: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54585P/FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54585P and M54585FP are eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits

PS51259-AP

Abstract: induction heating cooker IGBT MOTOR CONTROL RM250HA-10F induction cooker free circuit diagram rm30tna-h PS5 1020 CM400E4G-130H pwm INVERTER welder rm450ha-5h
Contextual Info: Power Devices General Catalog The search for state-of-the-art technology has landed on energy-savings and environmental protection. Mitsubishi Power Devices meets demands for energy-saving and eco-friendly semiconductors with advanced technology and a diversified product lineup. Industrial use,

18P4G

Abstract: 20P2N-A M63806FP M63806KP M63806P
Contextual Info: RY A N I MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL P DESCRIPTION M63806P/FP/KP are eight-circuit Single transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with

pnp 8 transistor array

Abstract: M54562P pnp darlington array 18P4G 20P2N-A M54562FP PNP DARLINGTON ARRAYS npn 8 transistor array Darlington Transistor Array
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54562P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54562P and M54562FP are eight-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.

M54522P

Abstract: M54522P equivalent M54522FP 18P4G 20P2N-A npn 8 transistor array common collector npn array
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54522P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54522P and M54522FP are eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits

M54564

Abstract: M54564P circuit fluorescent tube 24v 18P4G 20P2N-A M54564FP TIME BASE GENERATOR 10HZ PNP DARLINGTON ARRAYS pnp 8 transistor array npn 8 transistor array
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54564P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54564P and M54564FP are eight-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.

18P4G

Abstract: 20P2N-A M63815FP M63815KP M63815P
Contextual Info: RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63815P/FP/KP IM REL P 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63815P/FP/KP are eight-circuit Single transistor arrays

diode sy 200

Abstract: diode sy 180 10 diode sy 400 8 pnp 8 transistor array ttl transistor kp 18P4G 20P2N-A M63840FP M63840KP M63840P
Contextual Info: MITSUBISHI SEMICONDUCTOR 【TRANSISTOR ARRAY】 M63840P/FP/KP PRELIMINARY 8-Unit 500mA Source Type Darlington Transistor-Array With Clamp Diode ＊Notice: This is not a f inal specif ication. Some parametric limits are subject to change. DESCRIPT ION PIN CONFIGURATION （TOP VIEW）

M54667P

Abstract: 18p4g 16P2N M54571P 16P2S 20P2N 16P2Z M54534P M54562P M54666
Contextual Info: Circuit/Pin connection Type name j M54513P/FP & lo max.! Vo max. "'-A (V) 50 40 Pin connection Circuit diagram inO- bJM lin±J lil lil LiJ lil UÜ 2K GND NC R R rrâl -Q G N D R [Tel R iii ill ¿ j LiJ a r a 0UT NC R R R R lîi lit iiJ H' R R R R R R |iö |[i1

48P4B

Abstract: P/N146071 hssop 432W6 70P3S-M 10C2-C 136P6S-C 20P5A
Contextual Info: 3. DETAILED DIAGRAM OF PACKAGE OUTLINES LIST OF PACKAGE CODES CLASSIFIED ACCORIDING TO PACKAGE TYPE Pin Count Structure 5 8 8 10 12 9 12 12 14 16 20 24 8 14 16 18 18 20 20 22 22 24 24 24 24 28 28 28 30 32 32 32 40 42 20 28 30 32 36 40 42 48 52 64 P P P P P

M54562P

Abstract: M54562FP 18P4G pnp 8 transistor array 024V2 IN5 diode
Contextual Info: 三菱半導体〈トランジスタアレイ〉 M54562P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE 概 要 M54562P/FPはPNPトランジスタとNPNトランジスタで構 成された、8回路の出力ソース形ダーリントントランジスタア