18DEC2006 Search Results

MULTIGIG RT2 CONNECTOR

Abstract: Cat 3056
Contextual Info: 2 THIS £ L D R A WI N G IS UNPUBLISHED. C O P Y R I G H T 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R 1G H T S 20 LOC GP RESERVED. R E V ISIONS DIST 00 LTR DESCRIPTION DATE 20FEB2006 RT GGG RELEASED 18DEC2006 RT GG REV PER E C O - 0 8 - 0 2 3 2 2 9

Numonyx AN1995

Abstract: M25P40 AN1995
Contextual Info: M25P40 4 Mbit, low voltage, serial Flash memory with 75 MHz SPI bus interface Features „ 4 Mbit of Flash memory „ 2.3 V to 3.6 V single supply voltage „ SPI bus compatible serial interface „ 75 MHz clock rate maximum „ Page Program (up to 256 bytes) in 0.8 ms

Contextual Info: ST4460FX High voltage fast-switching NPN Power transistor General features • High voltage and high current capability ■ Low spread of dynamic parameters ■ Low base-drive requirements ■ Very high switching speed ■ High ruggedness ■ Fully insulated power package U.L. compliant

VFQFPN52

Abstract: STA529 STA529B STA529Q TFBGA48
Contextual Info: STA529 2 x 100 mW class-D amplifier with analog or digital input 2.0 multichannel digital audio processor with FFX Data Brief Features • Up to 96 dB dynamic range ■ Sample rates from 8 kHz to 192 kHz ■ FFXTM class-D driver ■ 1.5 V to 1.95 V digital power supply

Contextual Info: STRH100N6FSY3 N-channel 60V - 0.011Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH100N6FSY3 60V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight

Contextual Info: STGP30NC60W STGW30NC60W N-channel 30A - 600V - TO-247 - TO-220 Ultra fast switching PowerMESH IGBT Features Type VCES VCE sat Max @25°C IC @100°C STGW30NC60W STGP30NC60W 600V 600V < 2.5V < 2.5V 30A 30A 3 • High frequency operation ■ Lower CRES / CIES ratio (no cross-conduction

JESD97

Abstract: STRH60N20FSY3 25C312
Contextual Info: STRH60N20FSY1 STRH60N20FSY3 N-channel 200V - 0.044Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH60N20FSY1 200V STRH60N20FSY3 200V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge

STRH40N6SY1

Abstract: JESD97 STRH40N6SY3
Contextual Info: STRH40N6SY1 STRH40N6SY3 N-channel 60V - 0.032Ω - SMD-0.5 rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40N6SY1 60 V STRH40N6SY3 60 V 2 1 • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge

JESD97

Abstract: RH40N25FSY1 RH40N25FSY3 STRH40N25FSY1 STRH40N25FSY3
Contextual Info: STRH40N25FSY1 STRH40N25FSY3 N-channel 250V - 0.084Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40N25FSY1 250 V STRH40N25FSY3 250 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardened ■ Low total gate charge

Contextual Info: STRH10N25ESY3 N-channel 250V - 0.95Ω - TO-257AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH10N25ESY3 250V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge

Contextual Info: M25P40 4 Mbit, low voltage, Serial Flash memory with 50 MHz SPI bus interface Features • 4 Mbit of Flash memory ■ Page Program up to 256 Bytes in 1.5 ms (typical) ■ Sector Erase (512 Kbit) in 1 s (typical) ■ Bulk Erase (4 Mbit) in 4.5 s (typical)

w20nm60

Abstract: w20nm60 equivalent p20nm60 p20nm60fp w20nm P20NM60FP equivalent STB20NM60-1 B20NM60-1 STP20NM60 Contents STW20NM60
Contextual Info: STB20NM60/-1 - STP20NM60FP STP20NM60 - STW20NM60 N-channel 600V - 0.25Ω - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh Power MOSFET General features Type VDSS RDS on ID 600V 600V 600V 600V 600V < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω 20A 20A

Contextual Info: bq4832Y RTC Module With 32Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail circuit, and battery The bq4832Y RTC Module is a nonvolatile 262,144-bit SRAM organized as 32,768 words by 8 bits with

Contextual Info: bq20z90-V110 www.ti.com SLUS743 – NOVEMBER 2006 SBS 1.1-COMPLIANT GAS GAUGE ENABLED WITH IMPEDANCE TRACK TECHNOLOGY FOR USE WITH THE bq29330 FEATURES • • • • • • • • • • • • • • Patented Impedance Track™ Technology Accurately Measures Available Charge in

Contextual Info: SN74ABT3614 64 x 36 × 2 CLOCKED BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY WITH BUS MATCHING AND BYTE SWAPPING SCBS126H – JUNE 1992 – REVISED APRIL 2000 D D D D D D D D Free-Running CLKA and CLKB Can Be Asynchronous or Coincident Two Independent 64 × 36 Clocked FIFOs

WDS6

Abstract: bd96 BM4B
Contextual Info: bq4852Y RTC Module With 512Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail control circuit, and battery The bq4852Y RTC Module is a nonvolatile 4,194,304-bit SRAM organized as 524,288 words by 8 bits with

AN1995

Abstract: M25P40
Contextual Info: M25P40 4 Mbit, low voltage, serial Flash memory with 50 MHz SPI bus interface Features • 4 Mbit of Flash memory ■ 2.3 V to 3.6 V single supply voltage ■ SPI bus compatible serial interface ■ 50 MHz clock rate maximum ■ Page Program (up to 256 bytes) in 1.5 ms

STB13NM50N-1

Abstract: STF13NM50N STB13NM50N STP13NM50N STW13NM50N F13NM50N
Contextual Info: STB13NM50N/-1 - STF13NM50N STP13NM50N - STW13NM50N N-channel 500V - 0.250Ω - 12A - TO-220/FP - TO-247-I2/D2PAK Second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID STB13NM50N 550V <0.32Ω 12A STB13NM50N-1 550V <0.32Ω 12A STF13NM50N

TSSOP14

Abstract: TSSOP28 pd0014 tssop14 st automotive
Contextual Info: PD0014 Packing information Thin Shrink Small Outline Package for memory products Tape and Reel shipping media 1 Introduction Surface mounting packages can be supplied with Tape and Reel packing. The reels are standard 330mm diameter and contain between 2500 and 4000 devices.

W45NM60

Abstract: STW45NM60 JESD97 650V
Contextual Info: STW45NM60 N-channel 650V@Tjmax - 0.09Ω - 45A - TO-247 MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID STW45NM60 650V < 0.11Ω 45A • High dv/dt and avalanche capabilities ■ 100% avalanche tested ■ Low input capacitance and gate charge

smd DIODE code marking 20A

Abstract: smd code diode 20a STRH40N6SY1 STRH40N6SY3
Contextual Info: STRH40N6SY3 N-channel 60V - 0.032Ω - SMD-0.5 Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH40N6SY3 60V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight

12V ENERGY LIGHT CIRCUIT DIAGRAM

Abstract: STRH10N25ESY3
Contextual Info: STRH10N25ESY3 N-channel 250V - 0.95Ω - TO-257AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH10N25ESY3 250V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight

STRH100N10FSY3

Abstract: STRH100N10FSY1
Contextual Info: STRH100N10FSY3 N-channel 100V - 0.024Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH100N10FSY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight

Contextual Info: STRH80P6FSY3 P-channel 60V - 0.021Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH80P6FSY3 60V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight