187 TRANSISTOR NPN Search Results

2sd1187

Abstract: ed general semiconductor 4-00J1
Contextual Info: 2SD1187 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 1 187 HIGH POWER SWITCHING APPLICATIONS DC-DC CONVERTER AND DC-AC INVERTER APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 15.9MAX. . ¿3.2 ±0.2 pi • Low Collector-Emitter Saturation Voltage

2sd1187

Abstract: 2SD118
Contextual Info: TOSHIBA 2SD1187 2 S D 1 187 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SW ITCHING APPLICATIONS DC-DC CONVERTER A N D DC-AC INVERTER APPLICATIONS • INDUSTRIAL APPLICATIONS Unit in mm 15.9MAX. . ^3.2 ±0.2 Low Collector-Emitter Saturation Voltage : V qe sat = 0-5V

2Sd1187

Contextual Info: TOSHIBA 2SD1187 2 S D 1 187 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE HIGH PO W ER SWITCHING APPLICATIONS DC-DC CONVERTER AND DC-AC INVERTER APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 1 5 .9 M A X . ' • Low Collector-Emitter Saturation Voltage : V ç e sat = 0.5V

2SD118

Abstract: 2SD1187
Contextual Info: 2SD1187 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 1 187 Unit in mm HIGH POWER SWITCHING APPLICATIONS DC-DC CONVERTER AND DC-AC INVERTER APPLICATIONS • SYMBOL VCBO v CEO v EBO ic Ib Pc Tj Tstg RATING 100 80 5 10 2 80 150 -5 5 -1 5 0

ac187

Abstract: Transistor AC 187 AC 187 npn transistor TO 1 ac188 valvo Transistor AC 188 AC 188 valvo transistoren valvo transistor valvo germanium
Contextual Info: NICHT FÜR N E U E N T W I C K L U N G E N AC 187 GERMANIUM - NPN - NF - TRANSISTOR für Endstufen, mit AC 188 als komplementäres Paar Mechanische Daten: Gehäuse: Metall, JEDEC TÜ-1, 1 A 3 DIN 41 871 Alle Elektroden sind vom Gehbluse isoliert. Farbpunkt: Kollektorseite

Transistor AC 187

Abstract: AC187K ac187 AC 187 npn transistor TO 1 ac188k Transistor AC 187 k valvo valvo transistor valvo germanium valvo transistoren
Contextual Info: NICHT FÜR N E U E N T W I C K L U N G E N AC 187 K GERMANIUM - NPN - NF - TRANSISTOR für Endstufen, in Verbindung mit AC 188 K als komplementäres Paar Mechanische D a t e n : GehKuse: Metall JEDEC TO-1 bzw. 1 A 3 nach DIN 41 871 in Kdhlklotz Alle Elektroden sind

TRANSISTOR BD 187

Abstract: TRANSISTOR 187 transistor tl 187 transistor bd 320 c BD189 BD185 BD187 10 watt power transistor bd bD1894 motorola power transistor to-126
Contextual Info: MOTOROLA 6367254 SC -CXSTRS/R F> MOTOROLA SC ^ XSTRS/R »TJt.3 t.7 a S 4 96D 8 0 5 6 3 F D BD185 BD187 BD189 MOTOROLA m SEMICONDUCTOR TECHNICAL DATA PLASTIC' M ED IU M POWER SILICON NPN TRANSISTOR 4 AMPERE POWER TRANSISTOR . . . designed for use in 5 to 10 W att audio amplifiers utilizing

transistor tl 187

Abstract: BD187 TRANSISTOR 187 TRANSISTOR BD 187 BD185 BD189 TL 187 TRANSISTOR NPN TL 187 TRANSISTOR BE 187 TRANSISTOR BD transistor
Contextual Info: MOTOROLA 6367254 SC -CXSTRS/R F> MOTOROLA SC ^ XSTRS/R ßF^t.3ti7as4 96D 8 0 5 6 3 F> D BD185 BD187 BD189 MOTOROLA m SEM ICO NDUCTO R TECHNICAL DATA PLASTIC M E D IU M POWER SILICON NPN TRANSISTOR 4 AMPERE POWER TRANSISTOR . . . designed for use in 5 to 1 0 W att audio amplifiers utilizing

ASI10539

Abstract: ASI3003 147 B transistor
Contextual Info: ASI3003 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 3003 is a common base transistor capable of providing 3.0 W Class-C RF output power @ 3.0 GHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 6.0 dB min. at 3 W / 3,000 MHz

MSC3003

Contextual Info: MSC3003 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI MSC3003 is a common base transistor capable of providing 3.0 W Class-C RF output power @ 3.0 GHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 6.0 dB min. at 3 W / 3,000 MHz

ASI10538

Abstract: ASI3001
Contextual Info: ASI3001 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 3001 is a common base transistor capable of providing 1 W Class-C RF output power @ 3000 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 8.5 dB typ. at 1.0 W / 3,000 MHz

SD1831

Contextual Info: SD1831 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI SD1831 is a common base transistor capable of providing 1 W Class-C RF output power @ 3000 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 8.5 dB typ. at 1.0 W / 3,000 MHz

NEC JAPAN 282 110 01

Abstract: NEC 2561 TYP 513 309 2SC4570 2SC4570-T1 2SC4570-T2 date sheet ic 7483 marking 929 922 nec 5261
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4570 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4570 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the

b 514 transistor

Abstract: 2SC SERIES SC marking code NPN transistor 2SC SERIES TRANSISTORS 2SC4102 2SC3906K TRANSISTOR 2SC transistor DJ marking 2SA1514K 2SA1579
Contextual Info: 2SC3906K 2SC4102 Transistor, NPN Features Dimensions Units : mm available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) package 2SC3906K (SMT3) package marking: 2SC3906K and 2SC4102; T * , where ★ is hFE code high breakdown voltage, Vqeo = 120 V complementary pair with 2SA1514K

CMPT5551

Abstract: transistor NF marking code
Contextual Info: Central CMPT5551 TM Semiconductor Corp. NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5551 type is an NPN silicon transistor manufactured bythe epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier

Contextual Info: N AMER PHILIPS/DISCRETE MAINTENANCE TYPE □ taE D • bbS3T31 0 0 1 5 0 4 5 I 1 I ' M06075B400Z _ V PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended fo r use in military and professional applications. It operates only in pulsed conditions and is recommended fo r IFF applications.

AC 187 npn transistor TO 1

Abstract: Transistor AC 188 transistor lt 186 Transistor AC 187 2SC3906K
Contextual Info: 2SC3906K 2SC4102 Transistor, NPN Features Dimensions Units : mm available In SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) package package marking: 2SC3906K and 2SC4102; T * . where ★ is hFE code high breakdown voltage, Vceo = 120 V complementary pair with 2SA1514K

transistor 1211

Abstract: transistor su 312 transistor zo 109
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the

JC700

Abstract: transistor k 790
Contextual Info: MSC83305 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MSC83305 is a common base transistor designed for Class C amplifier applications in the 1.0 – 3.0 GHz frequency range PACKAGE STYLE .250 2L FLG A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 5.0 dB typ. at 4.5 W / 3.0 GHz

Contextual Info: Central" CMPT5551 Sem iconductor Corp. NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5551 type is an NPN silicon transistor manufactured bythe epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage am plifier

KSAB12

Abstract: e3 TRANSISTOR
Contextual Info: KSC1623 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER HIGH FREQUENCY OSC • Complement to KSAB12 ABSOLUTE MAXIMUM RATINGS TA- 2 5 t : Characteristic Sym bol Collector-Base Voltage Collector-Em ltter Voltage Emitter-Base Voltage Collector Current

KSC2310

Abstract: J-Z9-23
Contextual Info: SAMSUNG S EM I C O N D U C T O R INC 14 E 0 KSC2310 17^4142 OOOb'ilt 4 | NPN EPITAXIAL SILICON TRANSISTOR T -Z 9 -2 3 HIGH VOLTAGE POWER AMPLIFIER • Collactor— B«m Voltage Vc*o»200V TO-92L • Currant Gain-Bandwidth Product fT-100MHz OVp ABSOLUTE MAXIMUM RATINGS Ta=25°C)

CIL TRANSISTOR 188

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS CIL 187 TO-92 Plastic Package Intended For Low Voltage , High Current Output Pair Application Complementary CIL 188 ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise