180520 Search Results

Ec1030

Abstract: Y-IAR-EW78K-FULL-MOBILE ICC78K0R Y-IAR-EW78K-FULL
Contextual Info: Customer Notification EW78K Embedded Workbench for 78K Operating Precautions Y-IAR-EW78K-FULL-MOBILE Y-IAR-EW78K-FULL www.renesas.com Document No. R20UT0002ED0729 Date Published: October 2013 Notice 1. All information included in this document is current as of the date this document is issued. Such

75GAL123D

Contextual Info: SKM 75GB123D - 3 04 5 !     " Absolute Maximum Ratings Symbol Conditions IGBT )6 -7 3 04 5) %) -7 3 .4/ 5) %); .0//  94 * - 3 :/ 5) #/ * .4/ * = 0/  -7 3 .04 5) ./ A - 3 04 5) 94 * - 3 :/ 5) 4/ * .4/ * -7 3 .4/ 5) C:/

Contextual Info: HITACHI KAOHSIUNG HITACHI ELECTRONICS CO.LTD P.O. BOX 26-27 2,13TH ËAST ST. K.E.P.Z. KAOHSIUNG TAIWAN R.O.C. TEL: 07 821-5811 (7 LINE) FAX:(07) 821-5815 FOR MESSRS : DATE : Mar.02,2007 CUSTOMER’S ACCEPTANCE SPECIFICATIONS TX 20D 17VM 2BBA CONTENTS No.

Contextual Info: Enabling the Mobile Experience High Performance RF for wireless infrastructure Unleash the performance of your RF and microwave designs www.nxp.com/unleash-rf Enabling the Mobile Experience The future is mobile. And mobility means the freedom to innovate, communicate, connect and win.

2704-TX20D

Abstract: R3000 DA022
Contextual Info: HITACHI KAOHSIUNG HITACHI ELECTRONICS CO.,LTD P.O. BOX 26-27 2.13TH EAST ST. K.E.P.Z. KAOHSIUNG TAIWAN R.O.C. TEL: 07 821-5811 (7 LINE) FAX:(07) 821-5815 DATE : May. 13.2008 FOR MESSRS : CUSTOMER’S ACCEPTANCE SPECIFICATIONS TX20D17VM2BBA CONTENTS No. PAGE

2712-TX20D16VM2B

Abstract: R3000 TX20D16VM2BBA BHR-03VS-1 equivalent
Contextual Info: HITACHI KAOHSIUNG HITACHI ELECTRONICS CO.,LTD P.O. BOX 26-27 2,13TH EAST ST. K.E.P.Z. KAOHSIUNG TAIWAN R.O.C. TEL: 07 821-5811 (7 LINE) FAX:(07) 821-5815 FOR MESSRS : DATE : May. 13.2008 CUSTOMER’S ACCEPTANCE SPECIFICATIONS TX20D16VM2BBA CONTENTS No. ITEM

QUBiC4X

Abstract: BGX7300 power amplifier NXP BLF7G20LS-90P BGA7202 printed antenna dcs 1800 BLP7G10S-140P BLF578XR qubic4 BGU705 Thin Film Resistors SiCr
Contextual Info: Your partner in mobile communication infrastructure design High Performance RF for wireless infrastructure Looking for a partner who can help you meet the challenges of wireless infrastructure base station design? As a global leader in RF technology and component design, NXP Semiconductors offers

UPC8236

Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
Contextual Info: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s

ATC600F100JT250XT

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from

SS3N203Y

Abstract: SS4N225Y DD2016RS pnp sensor SMC/GSE-SSW-15 Hall Sensor 4-lead
Contextual Info: 15: Sensors Free Engineering Design Service Save Time—Use EMI’s FREE Engineering Service Save Money—Assemble the EOAT yourself It’s simple, it’s free, and there’s no obligation. Send us your part and a completed datasheet see page 944 . Our

MPF102 spice model

Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
Contextual Info: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for

power transistors table

Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL
Contextual Info: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,

BA 7891 NG

Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
Contextual Info: 释放潜能 RF 手册第 16 版 高性能 RF 产品应用和设计手册 2012 年 6 月 恩智浦助您释放下一代 RF 和微波设计的潜能 恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进

DTC1573

Abstract: temex tcxo
Contextual Info: DTC1573 18-05-2000 DTC1573 @ 19.44 MHz SMD FR4 19.9 x 9.4 mm TCXO TEMEX TIME & FREQUENCY Frequency: 19.44 MHz Package Size h = 7.0 mm Features: Operating Temperature Frequency Stability Ageing @ 25°C Overall Stability (1) -40°C~+85°C ±7 ppm ±1 ppm max./year

MRF8P9040N

Abstract: rf Amplifier mhz Doherty 470-860 MRF1513NT1 s2p MRF8S21100H MRF8S21100HS MRF8S9220HR3 AN1643 MRF6P23190H MRF8S9170NR3 MW6S004NT1
Contextual Info: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 35.1 5/2010 RF Product Selector Guide Freescale Semiconductor offers a comprehensive portfolio of RF products, primarily serving the cellular infrastructure, general purpose amplifier, broadcast, aerospace and industrial

12vDC TO 19vDC

Abstract: PSM060B-1Y122 EN60601-1 EN60601-1-2 PSM040B-1Y050 PSM060B-1Y120
Contextual Info: PSM Series Open Frame 40~65 Watts Single Output AC/DC Medical Power Supply FEATURES ● Open Frame ● Single Output ● Universal AC Input: 90~264VAC ● Output Voltages from 5 to 52VDC ● Over Voltage/ Over Load/ Short Circuit Protected ● 4 L x 2(W) x 1.18(H) inches (101.6 x 50.8 x 30 mm)

2701-TX20D19VM2

Abstract: TX20D19VM2BPA TX20D19VM2 FA5B040HP1R3000 sheet pile data DA05 display 2701-TX20 12APPEARANCE 2705-TX20
Contextual Info: HITACHI KAOHSIUNG HITACHI ELECTRONICS CO., LTD. \ FOR MESSRS:_ DATE: Oct. 02th 20Q8 CUSTOMER’S ACCEPTANCE SPECIFICATIONS TX20D19VM2BPA Contents •No. 1 ITEM SHEET No. COVER 7B64PS 2701-TX20D19VM2BPA-1 PAGE 1-1/1 2 RECORD OF REVISION 3 GENERAL DATA

C1210C104K5RACTU

Abstract: C0603C105K8PACTU
Contextual Info: 1805-2012.qxp:QuarkCatalogTempNew 9/18/12 2:52 PM Page 1805 21 Ceramic Chip Capacitors RoHS Stock No. X7R Stock No. Mfr.’s Type Cap. pF EACH Volt. Tol. (%) 1-49 50-99 10 10 10 10 10 10 10 10 10 10 10 .35 .27 10 .06 .04 10 .06 .02 10 .43 .36 10 .40 .38

gsm booster circuit

Abstract: mrf373al u880 RF MODULATORS mrf9030n MRF6VP11KH MRF6VP2600H MRF5S21045N circuit booster gsm mrfe6s9060
Contextual Info: RF Product Focus Products Quarter 4, 2007 SG1009Q42007 Rev 0 RF Industrial, Scientific and Medical Transistors RF LDMOS Power Transistors RF GaAS Power Transistors RF WiMAX, WiBro, BWA Power Transistors RF Amplifier ICs and Modules RF General Purpose Amplifiers

Contextual Info: SK 30 DGDL 066 ET CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, chopper -06 ! ! !=> -"06  2 345 1         2 34 9+ 51 : 2 *94 5  2 34 9+ 51 : 2 *4+ 5 !=> 2 3  !1  2 *  : SEMITOP 3

*J532

Abstract: C5750X7R1H106KT j692 C5750KF1H226ZT SEMICONDUCTOR J598 ATC600F100JT250XT MRF8P20100H SMT3725ALNF ATC600F1R2 J529
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from

MRF8P20100HR3

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from

6 pin TRANSISTOR SMD CODE CAA

Abstract: TEA6721 BF991 spice model
Contextual Info: RF マニュアル第 16 版 ハイパフォーマンスRF製品用のアプリケーション および設計マニュアル 2012年6月 NXPで次世代RFおよびマイクロ波設計のパフォ ーマンスがさらに向上 NXPの RF マニュアルは、

Contextual Info: HITACHI K AO HSIUNG HITACHI ELE C TR O N IC S C O .,LTD P.O. BOX 26-27 2 ,1 3TH EAST ST. K.E.P.Z. KAO HSIUNG TA IW A N R.O.C. TEL: 07 821-5811 (7 LINE) FAX:(07) 821-5815 FOR MESSRS : DATE : Sep.22.2006 CUSTOMER’S ACCEPTANCE SPECIFICATIONS TX20D16VM2BBA