1805-1880MHZ POWER AMPLIFIER Search Results

QPP-211

Contextual Info: QPP-211 120W, 1805-1880MHz Class AB Power Stage Preliminary QuikPAC Module Data General description: Features: The QPP-211 QuikPAC RF power module is an impedance matched Class AB amplifier stage designed for use in the output stage of linear RF power amplifiers for cellular base stations. The

QPP-212

Abstract: 328-01
Contextual Info: QPP-212 120W, 1805-1880MHz Class AB Power Stage Preliminary QuikPAC Module Data General description: Features: The QPP-212 QuikPAC RF power module is a Class AB amplifier stage designed for use in the output stage of linear RF power amplifiers for cellular base stations. The power transistors are

1800 ldmos

Abstract: MAPLST1819-090CF MAPLST1820-090CF
Contextual Info: RF Power Field Effect Transistor LDMOS, 1800 — 2000 MHz, 90W, 26V 5/14/04 MAPLST1820-090CF Preliminary Package Style Features Designed for base station applications in the 1805-1880MHz or 1930-1990MHz Frequency Band. Suitable for GSM, EDGE, TDMA, CDMA, and multi-carrier amplifier

1800 ldmos

Abstract: electrolytic capacitor 470 P-237 MAPLST1820-030CF component of 30w amplifier
Contextual Info: RF Power Field Effect Transistor LDMOS, 1800 — 2000 MHz, 30W, 26V 5/14/04 MAPLST1820-030CF Preliminary Package Style Features Designed for base station applications in the 1805-1880MHz or 1930-1990MHz Frequency Band. Suitable for GSM, EDGE, TDMA, CDMA, and multi-carrier amplifier

Contextual Info: RF Power Field Effect Transistor LDMOS, 1800 — 2000 MHz, 60W, 26V 5/14/04 MAPLST1820-060CF Preliminary Package Style Features Designed for base station applications in the 1805-1880MHz or 1930-1990MHz Frequency Band. Suitable for GSM, EDGE, TDMA, CDMA, and multi-carrier amplifier

RF 207

Abstract: QPP-207 xemod
Contextual Info: QPP-207 25W, 1805-1880MHz Class AB Driver Stage Preliminary QuikPAC Module Data General description: Features: The QPP-207 QuikPAC RF power module is an impedance matched Class AB amplifier stage designed for use in the driver stage of linear RF power amplifiers for cellular base stations. The

1805-1880MHz 10w

Abstract: 1805-1880MHz power module 1805-1880mhz module
Contextual Info: XD010-22S 10W, 1805-1880MHz GSM/EDGE Driver Amplifier Preliminary QuikPAC Module Data General description: Features: The XD010-22S QuikPAC 10W power module is a 2-stage Class A/AB amplifier module for use in the driver stages of GSM/EDGE RF power amplifiers for cellular base stations. The

XD010-22S

Abstract: xemod
Contextual Info: XD010-22S 10W, 1805-1880MHz GSM/EDGE Driver Amplifier Advanced QuikPAC Module Data General description: Features: The XD010-22S QuikPAC 10W power module is a 2-stage Class A/AB amplifier module for use in the driver stages of GSM/EDGE RF power amplifiers for cellular base stations. The power transistors are

QPP-210

Contextual Info: QPP-210 60W, 1805-1880MHz Class AB Power Stage Preliminary QuikPAC Module Data General description: Features: The QPP-210 QuikPAC RF power module is a Class AB amplifier stage designed for use in the driver and output stages of linear RF power amplifiers for cellular base stations. The power transistors are

1800 ldmos

Abstract: MAPLST1819-060CF MAPLST1820-060CF
Contextual Info: RF Power Field Effect Transistor LDMOS, 1800 — 2000 MHz, 60W, 26V 5/24/04 MAPLST1820-060CF Preliminary Package Style Features Designed for base station applications in the 1805-1880MHz or 1930-1990MHz Frequency Band. Suitable for GSM, EDGE, TDMA, CDMA, and multi-carrier amplifier

QPP-208

Abstract: XEMOD 5W amplifier tone
Contextual Info: QPP-208 25W, 1805-1880MHz Class AB Driver Stage Preliminary QuikPAC Module Data General description: Features: The QPP-208 QuikPAC RF power module is a Class AB amplifier stage designed for use in the driver and output stages of linear RF power amplifiers for cellular base stations. The power

XEMOD

Abstract: QPP-209 12.5W bypass transistor RF MODULE 1805-1880MHz power module
Contextual Info: QPP-209 60W; 1805-1880MHz Class AB Power Stage Preliminary QuikPAC Module Data General description: Features: The QPP-209 QuikPAC RF power module is an impedance matched Class AB amplifier stage designed for use in the driver or output stage of linear RF power amplifiers for cellular base stations.

UPF18030-095

Abstract: ultrarf 2200PF 470PF 47UF MMBTA64 MRF19030
Contextual Info: UPF18030-095 30W, 1.88 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications in the frequency band 1.805 to 1.880 GHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers

SPB2026Z

Abstract: SPB-2026Z TL 188 TRANSISTOR PIN DIAGRAM SPB-2026
Contextual Info: Advanced Information SPB-2026Z Product Description 1.7-2.2GHz 2W InGaP Amplifier Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is

Contextual Info: Preliminary SPB-2026Z Product Description 1.7-2.2GHz 2W InGaP Amplifier Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is

SPB-2026Z

Abstract: SPB-2026 2W High Linearity Amplifier spb2026z
Contextual Info: Preliminary SPB-2026Z Product Description 1.7-2.2GHz 2W InGaP Amplifier Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is

Contextual Info: Model X3DC18E2S Rev B Doherty Combiner b Description The X3DC18E2S is a low profile, high performance Doherty Combiner in a new easy to use, manufacturing friendly surface mount package. The X3DC18E2S is designed particularly for Doherty Amplifier applications, where tightly controlled phase and amplitude imbalance as

X3DC18E2S

Contextual Info: Model X3DC18E2S Rev B PRELIMINARY Doherty Combiner b Description The X3DC18E2S is a low profile, high performance Doherty Combiner in a new easy to use, manufacturing friendly surface mount package. The X3DC18E2S is designed particularly for Doherty Amplifier

315 MHz Power Amplifier

Contextual Info: Model X3DC18E2S RevA Doherty Combiner b Description The X3DC18E2S is a low profile, high performance Doherty Combiner in a new easy to use, manufacturing friendly surface mount package. The X3DC18E2S is designed particularly for Doherty Amplifier applications, where tightly controlled phase and amplitude imbalance as

SPB-2026

Abstract: zo 107 TL 188 TRANSISTOR PIN DIAGRAM SPB2026Z SPB-2026Z SPB2026 0722 ER39 SOF-26 ML200D
Contextual Info: SPB-2026Z Product Description 0.7-2.2GHz 2W InGaP Amplifier Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is

C17-C19

Abstract: ultrarf 10UF MMBTA64 MRF18060 UPF18060 240089
Contextual Info: UPF18060 60W, 1.88GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Designed for DCS base station applications in the frequency band 1805 to 1880 GHz. Rated with a minimum output power of 60W, it is ideal for CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers

Contextual Info: PI1843AG-21H PI1843AG21H 1805MHz TO 1880MHz SINGLE JUNCTION DROP-IN ISOLATOR Package: Drop-in, 1inx1in Product Description Features The PI1843AG-21H is a small, low cost drop-in isolator designed for applications in high performance linear power amplifiers for wireless infrastructure base stations. These isolators feature a robust construction for high

Contextual Info: PI1843AA-21H PI1843AA-21H 1805MHz to 1880MHz Single Junction Drop-In Isolator 1805MHZ TO 1880MHZ SINGLE JUNCTION DROP-IN ISOLATOR Package: Drop-in, 1inx1.25in Product Description Features The PI1843AA-21H is a low cost, drop-in isolator designed for applications in high

Contextual Info: PI1843AA-21H PI1843AA-21H 1805MHz to 1880MHz Single Junction Drop-In Isolator 1805MHZ TO 1880MHZ SINGLE JUNCTION DROP-IN ISOLATOR Package: Drop-in, 1inx1.25in Product Description Features The PI1843AA-21H is a low cost, drop-in isolator designed for applications in high