17ADD Search Results
17ADD Price and Stock
Diotec Semiconductor AG LDI1117-ADDIC: voltage regulator; LDO,linear,adjustable; 1.25÷13.65V; 1.35A |
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LDI1117-ADD | 5 |
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Diotec Semiconductor AG DI317-ADDIC: voltage regulator; linear,adjustable; 1.25÷40V; 0.1A; SO8; SMD |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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DI317-ADD | 1 |
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17ADD Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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eeprom PROGRAMMING tutorial
Abstract: 3062009
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eeprom programming tutorial3062009 | |
MGFC42V4450Contextual Info: M IT S U B IS H I S E M IC O N D U C T O R < G a A s F E T > M G FC42V4450 4 . 4 —5 .0 G H z BAND 1 6 W INTERNALLY MATCHED GaAs FET D E S C R I P T IO N O U T L IN E D R A W IN G U n it: m illim eters inches The M G FC 42V 4450 is an internally impedance-matched |
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mgfc42v4450-45dbcltem-01ltem-51 | |
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Contextual Info: ^M ITSUBISHI FA-13205A Packaged ELECTRONIC DEVICE GROUP DESCRIPTION FEATURES The F A 1 3 2 0 5 A is a high power, high gain amplifier module used for the 13GHz-band SSPA. • High output power P i d B = 21 dBm (TYP) @ f = 1 3 . 6 - 1 4 . 1 GHz High linear power gain |
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fa13205a13ghz-bandfa-13205a | |
MGFK36V4045Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFK36V4045 14.0-14.5GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION O U TLIN E DRAW ING The MGFK36V4045 is an internally impedance matched GaAs power FET especially designed for use in 14.0-14.5 GHz band amplifiers. The hermetically sealed metal-ceramic |
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mgfk36v404517add | |
MGFK35V2228
Abstract: l012a fet 30 f 124
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mgfk35v2228-i100l012afet 30 f 124 | |
3SB140Contextual Info: blllSMT O O C ^ D S SSE D MICR ON T E C H N O L O G Y INC T37 MT5C1008 DIE 128K X 8 SRAM M IC R O N MILITARY SRAM DIE 128Kx 8 SRAM WITH DUAL CHIP ENABLE FEATURES High speed: 20,25,35 and 45ns High-performance, low-power, CMOS process Easy memory expansion with CE1, CE2 and OE |
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mt5c1008128kxmil-std-883mt5c1008die+1 | |
P17AD
Abstract: PV14 circiut diagram LPC47N354 CH747 Mitsubishi DA U31 quanta schematics ich6-m LPC47N254 pv14 diagram circiut RN45
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4x1004x133mhz33mhzpci1510gvf+16 | |
MGFK35V4045
Abstract: FS21
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mgfk35v4045s22vs1200mafs21 | |
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Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V7785B Vi are l'niS 7 .7 — 8.5G H z BAND 1 0 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 4 0 V 7 7 8 5 B is an in te rna lly im p eda nce -m atche d GaAs power F ET especially designed fo r use in 7 .7 - 8 . 5 |
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mgfc40v7785b | |
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Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFK35V4045 1 4 .0 — 1 4 .5 G H z BAND 3 W INTERNA LLY M ATCHED GaAs FET DESCRIPTION The M G F K 3 5 V 4 0 4 5 is an intern ally impedance matched GaAs pow er F E T especially designed fo r use in 1 4 . 0 ~ 14.5 G H z-band amplifiers. T he herm etically sealed m etal-ceram ic |
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gfk35v404517add1200ma | |
embedded system mini projects using 8051 free
Abstract: agriculture based electronics projects DB25 LPT 8086 microprocessor mini project circuit ic 8051 MEMORY CARD 128 KB BROSE mini projects using bread board and integrated MCU 80C535 BOSCH 7.4.9 MM486
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c167/st10-167cr/csc167cr/csst10f168+14 | |
K35V4045Contextual Info: MITSUBISHI SEM ICO ND UCTOR < G aA s FET> M G F K 35V 4045 1 4 .0 — 14.5G H z BAND 3 W INTERNALLY MATCHED GaAs FET D E S C R IP T IO N The M G F K 3 5 V 4 0 4 5 is an internally impedance matched GaAs power F E T especially designed for use in 14 ,0 ~ 14.5 |
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17add35v4045k35v4045 |