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    17ADD Search Results

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    Diotec Semiconductor AG

    Diotec Semiconductor AG LDI1117-ADD

    IC: voltage regulator; LDO,linear,adjustable; 1.25÷13.65V; 1.35A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME LDI1117-ADD 5
    • 1 -
    • 10 $0.16
    • 100 $0.11
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    • 10000 $0.09
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    Diotec Semiconductor AG DI317-ADD

    IC: voltage regulator; linear,adjustable; 1.25÷40V; 0.1A; SO8; SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME DI317-ADD 1
    • 1 $0.37
    • 10 $0.28
    • 100 $0.18
    • 1000 $0.18
    • 10000 $0.12
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    17ADD Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    eeprom PROGRAMMING tutorial

    Abstract: 3062009
    Contextual Info: Component Wizard User Manual version 1.55 Copyright 2010 Freescale Semiconductor, Inc. PROCESSOR EXPERT is trademark of Freescale Semiconductor, Inc. -1- CONTENTS 1. Introduction 4 2. Basic Terms 5 2.1. Inheritance 7 2.1.1. Inheritance scheme 2.1.2. Options of Methods Inheritance


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    eeprom programming tutorial3062009 PDF

    MGFC42V4450

    Contextual Info: M IT S U B IS H I S E M IC O N D U C T O R < G a A s F E T > M G FC42V4450 4 . 4 —5 .0 G H z BAND 1 6 W INTERNALLY MATCHED GaAs FET D E S C R I P T IO N O U T L IN E D R A W IN G U n it: m illim eters inches The M G FC 42V 4450 is an internally impedance-matched


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    mgfc42v4450-45dbcltem-01ltem-51 PDF

    Contextual Info: ^M ITSUBISHI FA-13205A Packaged ELECTRONIC DEVICE GROUP DESCRIPTION FEATURES The F A 1 3 2 0 5 A is a high power, high gain amplifier module used for the 13GHz-band SSPA. • High output power P i d B = 21 dBm (TYP) @ f = 1 3 . 6 - 1 4 . 1 GHz High linear power gain


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    fa13205a13ghz-bandfa-13205a PDF

    MGFK36V4045

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFK36V4045 14.0-14.5GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION O U TLIN E DRAW ING The MGFK36V4045 is an internally impedance matched GaAs power FET especially designed for use in 14.0-14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


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    mgfk36v404517add PDF

    MGFK35V2228

    Abstract: l012a fet 30 f 124
    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F K 3 5 V 22 28 1 2 .2 — 1 2 .8 G H z BAND 3 W INTERNA LLY M ATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M G F K 3 5 V 2 2 2 8 is an internally impedance matched GaAs power FET especially designed for use in 12.2 ~ 12.8


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    mgfk35v2228-i100l012afet 30 f 124 PDF

    3SB140

    Contextual Info: blllSMT O O C ^ D S SSE D MICR ON T E C H N O L O G Y INC T37 MT5C1008 DIE 128K X 8 SRAM M IC R O N MILITARY SRAM DIE 128Kx 8 SRAM WITH DUAL CHIP ENABLE FEATURES High speed: 20,25,35 and 45ns High-performance, low-power, CMOS process Easy memory expansion with CE1, CE2 and OE


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    mt5c1008128kxmil-std-883mt5c1008die+13sb140 PDF

    P17AD

    Abstract: PV14 circiut diagram LPC47N354 CH747 Mitsubishi DA U31 quanta schematics ich6-m LPC47N254 pv14 diagram circiut RN45
    Contextual Info: 1 2 3 4 5 6 Tonga & Tyler T2 7 8 01 VER : 3C A A AC/BATT CONNECTOR PG 32 RUN POWER SW DC/DC +3V_SRC +5VSUS Dothan PG 37 CPU VR PG 36 (478 Micro-FCPGA) PG 33 RESET CKT Thermal /FAN CTRL CLOCKS PG 31 PG 16 PG 28 PG 3,4 BATT CHARGER PG 32 4X100 / 4X133MHZ LVDS


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    4x1004x133mhz33mhzpci1510gvf+16page36pr176page241000p/3kv1500p/3kvch2150gki11p17adpv14 circiut diagramlpc47n354ch747mitsubishi da u31quantaschematics ich6-mlpc47n254pv14 diagram circiutrn45 PDF

    MGFK35V4045

    Abstract: FS21
    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFK35V4045 1 4 .0 — 14.5G H z BAND 3 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F K 3 5 V 4 0 4 5 is an intern ally impedance matched GaAs pow er F E T especially designed fo r use in 1 4 .0 ~ 14.5 G H z-band am plifiers. The herm etically sealed m etal-ceram ic


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    mgfk35v4045s22vs1200mafs21 PDF

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V7785B Vi are l'niS 7 .7 — 8.5G H z BAND 1 0 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 4 0 V 7 7 8 5 B is an in te rna lly im p eda nce -m atche d GaAs power F ET especially designed fo r use in 7 .7 - 8 . 5


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    mgfc40v7785b PDF

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFK35V4045 1 4 .0 — 1 4 .5 G H z BAND 3 W INTERNA LLY M ATCHED GaAs FET DESCRIPTION The M G F K 3 5 V 4 0 4 5 is an intern ally impedance matched GaAs pow er F E T especially designed fo r use in 1 4 . 0 ~ 14.5 G H z-band amplifiers. T he herm etically sealed m etal-ceram ic


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    gfk35v404517add1200ma PDF

    embedded system mini projects using 8051 free

    Abstract: agriculture based electronics projects DB25 LPT 8086 microprocessor mini project circuit ic 8051 MEMORY CARD 128 KB BROSE mini projects using bread board and integrated MCU 80C535 BOSCH 7.4.9 MM486
    Contextual Info: C o v e r i n g t h e E n t i r e S p e c t r u m o f E m b e d d e d C o n t r o l Trusted C167/ST10 Embedded Architecture now in phyCORE SBC ® design C o v e r i n g t h e E n t i r e S p e c t r u m phyCORE®-167CR/CS E m b e d d e d C o n t r o l Product Catalogue 2001


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    c167/st10-167cr/csc167cr/csst10f168+1416-bitd-07973d-5512932-bitembedded system mini projects using 8051 freeagriculture based electronics projectsdb25 lpt8086 microprocessor mini project circuitic 8051memory card 128 kb brosemini projects using bread board and integratedmcu 80c535bosch 7.4.9mm486 PDF

    K35V4045

    Contextual Info: MITSUBISHI SEM ICO ND UCTOR < G aA s FET> M G F K 35V 4045 1 4 .0 — 14.5G H z BAND 3 W INTERNALLY MATCHED GaAs FET D E S C R IP T IO N The M G F K 3 5 V 4 0 4 5 is an internally impedance matched GaAs power F E T especially designed for use in 14 ,0 ~ 14.5


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    17add35v4045k35v4045 PDF