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    1718G Search Results

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    Samtec Inc TSW-117-18-G-S

    Pin Header, Board-to-Board, Wire-to-Board, 2.54 mm, 1 Rows, 17 Contacts, Through Hole, TSW Series - Bulk (Alt: TSW-117-18-G-S)
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    Avnet Americas TSW-117-18-G-S Bulk 1
    • 1 $2.64
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    • 1000 $1.57
    • 10000 $1.11
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    Mouser Electronics TSW-117-18-G-S
    • 1 $2.67
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    • 1000 $2.09
    • 10000 $1.98
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    Newark TSW-117-18-G-S Bulk 275 1
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    Sager TSW-117-18-G-S 275 1
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    Master Electronics TSW-117-18-G-S
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    • 10 $2.51
    • 100 $2.22
    • 1000 $1.74
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    Samtec Inc TSW-117-18-G-D

    Pin Header, Board-to-Board, Wire-to-Board, 2.54 mm, 2 Rows, 34 Contacts, Through Hole, TSW Series - Bulk (Alt: TSW-117-18-G-D)
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    Avnet Americas TSW-117-18-G-D Bulk 1 Weeks, 3 Days 1
    • 1 $3.18
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    Mouser Electronics TSW-117-18-G-D
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    Newark TSW-117-18-G-D Bulk 1
    • 1 $3.26
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    • 1000 $2.51
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    Sager TSW-117-18-G-D 1
    • 1 $3.60
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    • 100 $3.07
    • 1000 $2.24
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    Samtec Inc TSW-117-18-G-D-LL

    Pin Header, Board-to-Board, Wire-to-Board, 2.54 mm, 2 Rows, 34 Contacts, Through Hole, TSW Series - Bulk (Alt: TSW-117-18-G-D-LL)
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    Avnet Americas TSW-117-18-G-D-LL Bulk 1 Weeks, 3 Days 1
    • 1 $3.27
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    • 1000 $2.10
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    Mouser Electronics TSW-117-18-G-D-LL
    • 1 $3.81
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    • 1000 $2.66
    • 10000 $2.45
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    Newark TSW-117-18-G-D-LL Bulk 1
    • 1 $3.60
    • 10 $3.59
    • 100 $3.11
    • 1000 $2.58
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    Sager TSW-117-18-G-D-LL 1
    • 1 $3.70
    • 10 $3.70
    • 100 $3.15
    • 1000 $2.33
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    Glenair Inc MS3417-18G

    - Bulk (Alt: MS3417-18G)
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    Mouser Electronics MS3417-18G
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    Amphenol Corporation 10-123017-18G

    Circular MIL Spec Tools, Hardware & Accessories HEX NUT; SOLDER
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    Mouser Electronics 10-123017-18G
    • 1 $5.59
    • 10 $5.09
    • 100 $4.48
    • 1000 $3.25
    • 10000 $2.93
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    1718G Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    17-18g

    Abstract: 1718G NJD1718
    Contextual Info: NJD1718T4G Power Transistors PNP Silicon DPAK For Surface Mount Applications Designed for high−gain audio amplifier and power switching applications. http://onsemi.com Features SILICON POWER TRANSISTORS 2 AMPERES 50 VOLTS 15 WATTS • Low Collector−Emitter Saturation Voltage −


    Original
    njd1718t4gnjd1718/d17-18g1718g+1njd1718 PDF

    17-18g

    Contextual Info: JXWBLB-T-BP-13000-2000-9CSMF 13GHz Cavity Band Pass Filter Test report is for reference only. TEST REPORT For JXWBLB-T-BP-13000-2000-9CSMF 1 JXWBLB-T-BP-13000-2000-9CSMF 13GHz Cavity Band Pass Filter Technical Specification Center Frequency[f0] GHz 13 1dB Bandwidth(GHz)


    Original
    jxwblb-t-bp-13000-2000-9csmf13ghzvswr/50ohms17-18ghz+2t-bp-13000-2000-9csmf17-18g PDF

    Contextual Info: NJD1718, NJVNJD1718 Power Transistors PNP Silicon DPAK For Surface Mount Applications Designed for high−gain audio amplifier and power switching applications. Features • • • • • Low Collector−Emitter Saturation Voltage High Switching Speed Epoxy Meets UL 94 V−0 @ 0.125 in


    Original
    njd1718njvnjd1718njd1718/d PDF

    17-18g

    Abstract: 8144 10A1 10B1 CHA3513 617G
    Contextual Info: CHA3513 RoHS COMPLIANT 6-18GHz 3 bit Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3513 is composed by a three steps digital attenuator followed by a three stage travelling amplifier and a Single Pole Single Through SPST switch. It is designed for


    Original
    cha35136-18ghzdscha3513-814417-18g+4814410a110b1617g PDF

    17-18G

    Abstract: 1718g
    Contextual Info: NJD1718T4G Power Transistors PNP Silicon DPAK For Surface Mount Applications Designed for high−gain audio amplifier and power switching applications. http://onsemi.com Features SILICON POWER TRANSISTORS 2 AMPERES 50 VOLTS 15 WATTS • Low Collector−Emitter Saturation Voltage −


    Original
    njd1718t4gnjd1718/d17-18g1718g PDF

    17-18g

    Abstract: 1718G
    Contextual Info: NJD1718T4G Power Transistors PNP Silicon DPAK For Surface Mount Applications Designed for high−gain audio amplifier and power switching applications. http://onsemi.com Features SILICON POWER TRANSISTORS 2 AMPERES 50 VOLTS 15 WATTS • Low Collector−Emitter Saturation Voltage −


    Original
    njd1718t4gnjd1718/d17-18g1718g PDF

    10A1

    Abstract: 10B1 CHA3513
    Contextual Info: CHA3513 RoHS COMPLIANT 6-18GHz 3 bit Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3513 is composed by a three steps digital attenuator followed by a three stage travelling amplifier and a Single Pole Single Through SPST switch. It is designed for


    Original
    cha35136-18ghzdscha3513-814410a1+110b1 PDF

    17-18G

    Contextual Info: NJD1718T4G Power Transistors PNP Silicon DPAK For Surface Mount Applications Designed for high−gain audio amplifier and power switching applications. Features • • • • Low Collector−Emitter Saturation Voltage High Switching Speed Epoxy Meets UL 94 V−0 @ 0.125 in


    Original
    njd1718t4gnjd1718/d17-18g PDF

    17-18g

    Abstract: CHA3513 8144 10A1 10B1
    Contextual Info: CHA3513 RoHS COMPLIANT 6-18GHz 3 bit Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3513 is composed by a three steps digital attenuator followed by a three stage travelling amplifier and a Single Pole Single Through SPST switch. It is designed for


    Original
    cha35136-18ghzdscha3513-814417-18g+3814410a110b1 PDF

    Contextual Info: CHA3513 RoHS COMPLIANT 6-18GHz 3 bit Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3513 is composed by a three steps digital attenuator followed by a three stage travelling amplifier and a Single Pole Single Through SPST switch. It is designed for


    Original
    cha35136-18ghzdscha3513-8144 PDF